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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IPI041N12N3GAKSA1 DISTI # V99:2348_06377393 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 500 |
|
| IPI041N12N3GAKSA1 DISTI # V36:1790_06377393 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 300 |
|
| IPI041N12N3GAKSA1 DISTI # IPI041N12N3GAKSA1-ND | Infineon Technologies AG | MOSFET N-CH 120V 120A TO262-3 RoHS: Compliant Min Qty: 500 Container: Tube | Temporarily Out of Stock |
|
| IPI041N12N3GAKSA1 DISTI # 30182284 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 500 |
|
| IPI041N12N3GAKSA1 DISTI # 26193810 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 300 |
|
| IPI041N12N3GAKSA1 DISTI # IPI041N12N3GAKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI041N12N3GAKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
|
| IPI041N12N3GAKSA1 DISTI # SP000652748 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 (Alt: SP000652748) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| IPI041N12N3GAKSA1. DISTI # 32AC0679 | Infineon Technologies AG | Continuous Drain Current Id:120A,Drain Source Voltage Vds:120V,Automotive Qualification Standard:- | 0 |
|
| IPI041N12N3G | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 493 |
|
| IPI041N12N3GAKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 27450 |
|
| IPI041N12N3 G DISTI # 726-IPI041N12N3G | Infineon Technologies AG | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 RoHS: Compliant | 111 |
|
| IPI041N12N3GAKSA1 DISTI # 726-IPI041N12N3GAKSA | Infineon Technologies AG | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 RoHS: Compliant | 500 |
|
| IPI041N12N3GAKSA1 DISTI # C1S322000399073 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 500 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: IPI041N12N3 G OMO.#: OMO-IPI041N12N3-G |
MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 |
|
|
Mfr.#: IPI041N12N3GAKSA1 OMO.#: OMO-IPI041N12N3GAKSA1 |
MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 |
|
Mfr.#: IPI041N12N3 OMO.#: OMO-IPI041N12N3-1190 |
全新原裝 |
|
|
Mfr.#: IPI041N12N3G OMO.#: OMO-IPI041N12N3G-1190 |
Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
Mfr.#: IPI041N12N3GAKSA1 |
MOSFET N-CH 120V 120A TO262-3 |
