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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IPI041N12N3GAKSA1 DISTI # V99:2348_06377393 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 500 |
|
| IPI041N12N3GAKSA1 DISTI # V36:1790_06377393 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 300 |
|
| IPI041N12N3GAKSA1 DISTI # IPI041N12N3GAKSA1-ND | Infineon Technologies AG | MOSFET N-CH 120V 120A TO262-3 RoHS: Compliant Min Qty: 500 Container: Tube | Temporarily Out of Stock |
|
| IPI041N12N3GAKSA1 DISTI # 30182284 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 500 |
|
| IPI041N12N3GAKSA1 DISTI # 26193810 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 300 |
|
| IPI041N12N3 G DISTI # IPI041N12N3G | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A 3-Pin TO-262 Tube - Bulk (Alt: IPI041N12N3G) RoHS: Compliant Min Qty: 145 Container: Bulk | Americas - 0 |
|
| IPI041N12N3GAKSA1 DISTI # IPI041N12N3GAKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI041N12N3GAKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
|
| IPI041N12N3GAKSA1 DISTI # IPI041N12N3GAKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 - Bulk (Alt: IPI041N12N3GAKSA1) RoHS: Compliant Min Qty: 149 Container: Bulk | Americas - 0 | |
| IPI041N12N3GAKSA1 DISTI # SP000652748 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 (Alt: SP000652748) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| IPI041N12N3GAKSA1. DISTI # 32AC0679 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:120V,On Resistance Rds(on):4.1mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes | 0 |
|
| IPI041N12N3GAKSA1 DISTI # 726-IPI041N12N3GAKSA | Infineon Technologies AG | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 RoHS: Compliant | 400 |
|
| IPI041N12N3 G DISTI # 726-IPI041N12N3G | Infineon Technologies AG | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 RoHS: Compliant | 46 |
|
| IPI041N12N3G | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 493 |
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| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: IPI040N06N3GXKSA1 OMO.#: OMO-IPI040N06N3GXKSA1 |
MOSFET N-Ch 60V 90A I2PAK-3 |
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Mfr.#: IPI041N12N3GAKSA1 OMO.#: OMO-IPI041N12N3GAKSA1 |
MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 |
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Mfr.#: IPI045N10N3GXKSA1 OMO.#: OMO-IPI045N10N3GXKSA1 |
MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3 |
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Mfr.#: IPI040N06N3GHKSA1 OMO.#: OMO-IPI040N06N3GHKSA1 |
MOSFET MV POWER MOS |
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Mfr.#: IPI041N12N3G OMO.#: OMO-IPI041N12N3G-1190 |
Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: IPI045N10N OMO.#: OMO-IPI045N10N-1190 |
全新原裝 |
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Mfr.#: IPI045N10N3G OMO.#: OMO-IPI045N10N3G-1190 |
Trans MOSFET N-CH 100V 100A 3-Pin TO-262 Tube - Bulk (Alt: IPI045N10N3 G) |
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Mfr.#: IPI04CN10NG OMO.#: OMO-IPI04CN10NG-1190 |
全新原裝 |
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Mfr.#: IPI040N06N3 G OMO.#: OMO-IPI040N06N3-G-128 |
MOSFET N-Ch 60V 90A I2PAK-3 OptiMOS 3 |
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Mfr.#: IPI045N10N3 G OMO.#: OMO-IPI045N10N3-G-126 |
IGBT Transistors MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3 |