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FQA160N08

FQA160N08
Mfr. #:
FQA160N08
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 80V N-Channel QFET
生命週期:
製造商新產品
數據表:
FQA160N08 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-3PN-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
80 V
Id - 連續漏極電流：
160 A
Rds On - 漏源電阻：
7 mOhms
Vgs - 柵源電壓：
25 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
375 W
配置：
單身的
頻道模式：
增強
商品名：
場效應管
打包：
管子
高度：
20.1 mm
長度：
16.2 mm
系列：
FQA160N08
晶體管類型：
1 N-Channel
類型：
MOSFET
寬度：
5 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
92 S
秋季時間：
410 ns
產品類別：
MOSFET
上升時間：
970 ns
出廠包裝數量：
450
子類別：
MOSFET
典型關斷延遲時間：
260 ns
典型的開啟延遲時間：
85 ns
第 # 部分別名：
FQA160N08_NL
單位重量：
0.183425 oz
Tags
FQA16, FQA1, FQA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 80 V, 160 A, 7 mΩ, TO-3P
***Yang
Trans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube
***ure Electronics
FQA Series 80 V 160 A 375 W Through Hole N-Channel QFet® Mosfet - TO-3PN
***r Electronics
Power Field-Effect Transistor, 160A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***enic
80V 160A 5.6m´Î@10V80A 375W 4V@250uA 530pF@25V N Channel 6.1nF@25V 225nC@10V -55¡Í~+175¡Í@(Tj) TO-3 MOSFETs ROHS
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***emi
N-Channel Power MOSFET, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:170A; On Resistance, Rds(on):0.0056ohm; Package/Case:D2-PAK; Power Dissipation, Pd:375W; Drain Source On Resistance @ 10V:0.0056ohm ;RoHS Compliant: No
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ment14 APAC
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-3P; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Power Dissipation Ptot Max:375W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;TO-220AB;PD 300W
***ure Electronics
Single N-Channel 100 V 7 mOhm 250 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ow.cn
Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
N Channel Mosfet, 100V, 130A, To-220Ab; Channel Type:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:130A; Transistor Mounting:through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes
***ure Electronics
Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
***(Formerly Allied Electronics)
MOSFET, N Ch., 100V, 127A, 6 MOHM, 120 NC QG, TO-247AC, Pb-Free
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ment14 APAC
MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:134A; Package / Case:TO-247AC; Power Dissipation Pd:280W; Pulse Current Idm:560A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 100 V, 4.5 mOhm, 120 A STripFET(TM) III Power MOSFET in TO-220 package
***ow.cn
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a TO-262 Package
***ical
Trans MOSFET N-CH 100V 130A Automotive 3-Pin(3+Tab) TO-262 Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET,N CH,100V,75A,TO262; Continuous Drain Current Id:130A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:300W; Voltage Vgs Max:20V
***ure Electronics
N-Channel 100 V 5.5 mO 203 nC Flange Mount PowerTrench® Mosfet - TO-220AB
***Yang
Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 T/R - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 100V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:263W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:576A
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
型號 製造商 描述 庫存 價格
FQA160N08
DISTI # 26637361		ON Semiconductor80V N-CHANNEL QFET10800
  • 2500:$2.9410
  • 1000:$3.0515
  • 500:$3.5020
  • 450:$3.8420
FQA160N08
DISTI # FQA160N08-ND		ON SemiconductorMOSFET N-CH 80V 160A TO-3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$4.9676
FQA160N08
DISTI # FQA160N08		ON SemiconductorTrans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA160N08)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$3.0900
  • 900:$3.0900
  • 1800:$3.0900
  • 2700:$2.9900
  • 4500:$2.8900
FQA160N08
DISTI # FQA160N08		ON SemiconductorTrans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FQA160N08)
RoHS: Compliant
Min Qty: 450		Asia - 0
    FQA160N08
    DISTI # FQA160N08    		ON SemiconductorTrans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FQA160N08)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€3.6900
    • 10:€3.3900
    • 25:€3.1900
    • 50:€3.0900
    • 100:€2.9900
    • 500:€2.8900
    • 1000:€2.6900
    FQA160N08
    DISTI # 512-FQA160N08    		ON SemiconductorMOSFET 80V N-Channel QFET
    RoHS: Compliant    		345
    • 1:$6.3200
    • 10:$5.7200
    • 25:$5.4500
    • 100:$4.7300
    • 250:$4.5200
    • 500:$4.1200
    • 1000:$3.5900
    FQA160N08Fairchild Semiconductor CorporationPower Field-Effect Transistor, 160A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		21000
    • 1000:$5.6600
    • 500:$5.9600
    • 100:$6.2100
    • 25:$6.4700
    • 1:$6.9700
    FQA160N08
    DISTI # 6714900P    		ON SemiconductorMOSFET N-CHANNEL 80V 160A TO-3P(N), TU25
    • 25:£4.0100
    • 100:£3.6000
    • 250:£3.2900
    • 500:£3.0000
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    可用性
    庫存:
    303
    訂購:
    2286
    輸入數量:
    FQA160N08的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$6.00
    US$6.00
    10
    US$5.09
    US$50.90
    100
    US$4.42
    US$442.00
    250
    US$4.19
    US$1 047.50
    500
    US$3.76
    US$1 880.00
    1000
    US$3.17
    US$3 170.00
    2500
    US$3.01
    US$7 525.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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