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GS61004B-E01-MR

GS61004B-E01-MR
Mfr. #:
GS61004B-E01-MR
製造商:
GaN Systems
描述:
MOSFET 100V 45A E-Mode GaN
生命週期:
製造商新產品
數據表:
GS61004B-E01-MR 數據表
交貨:
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ECAD Model:
更多信息:
GS61004B-E01-MR 更多信息
產品屬性
屬性值
製造商：
氮化鎵系統
產品分類：
MOSFET
RoHS：
Y
技術：
氮化鎵
安裝方式：
貼片/貼片
包裝/案例：
GaNPX-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
45 A
Rds On - 漏源電阻：
15 mOhms
Vgs th - 柵源閾值電壓：
1.3 V
Vgs - 柵源電壓：
7 V
Qg - 門電荷：
6.2 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
配置：
單身的
頻道模式：
增強
打包：
捲軸
高度：
0.52 mm
長度：
4.55 mm
產品：
MOSFET
系列：
GS6100x
寬度：
4.35 mm
品牌：
氮化鎵系統
濕氣敏感：
是的
產品類別：
MOSFET
出廠包裝數量：
250
子類別：
MOSFET
第 # 部分別名：
GS61004B-E01-MR
Tags
GS6100, GS610, GS61, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6100x 100V GaN Transistors
GaN Systems GS6100x 100V GaN Transistors are enhancement mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6100x Transistors are top-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.Learn More
GS61004B 100V Enhancement Mode GaN Transistor
GaN Systems GS61004B 100V Enhancement Mode GaN Transistor has a 100V enhancement mode power switch and are housed in a low inductance GaNPX™ package. The GS61004B have reverse current capability, zero reverse recovery loss and are RoHS 6 compliant. Typical applications are for 48V DC-DC conversions, AC-DC (secondary side synch. rectification), VHF very small form-factor adapters, appliances and power tools and 48V motor drives.
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 IC HALF-BRIDGE GATE DRVR 10WSON
可用性
庫存:
Available
訂購:
1985
輸入數量:
GS61004B-E01-MR的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$5.64
US$5.64
10
US$5.45
US$54.50
25
US$5.20
US$130.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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