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LM5113QDPRRQ1

LM5113QDPRRQ1
Mfr. #:
LM5113QDPRRQ1
描述:
Gate Drivers 5A 100V HALF-BRIDGEGATEDRIVER Q GRADE
生命週期:
製造商新產品
數據表:
LM5113QDPRRQ1 數據表
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更多信息:
LM5113QDPRRQ1 更多信息 LM5113QDPRRQ1 Product Details
產品屬性
屬性值
製造商：
德州儀器
產品分類：
柵極驅動器
RoHS：
Y
產品：
半橋驅動器
類型：
高端，低端
安裝方式：
貼片/貼片
包裝/案例：
WSON-10
司機人數：
2 Driver
輸出數量：
2 Output
輸出電流：
5 A
上升時間：
7 ns
秋季時間：
3.5 ns
電源電壓 - 最小值：
4.5 V
電源電壓 - 最大值：
5.5 V
工作電源電流：
2 mA
最低工作溫度：
- 40 C
最高工作溫度：
+ 125 C
系列：
LM5113-Q1
打包：
捲軸
工作溫度範圍：
- 40 C to + 125 C
技術：
矽
品牌：
德州儀器
最大關斷延遲時間：
26.5 ns
最大開啟延遲時間：
28 ns
產品類別：
柵極驅動器
出廠包裝數量：
4500
子類別：
PMIC - 電源管理 IC
Tags
LM5113, LM511, LM51, LM5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***o
    S***o
    RU

    On the quality of writing

    2019-08-06
    J***k
    J***k
    KR

    Fast delivery summer

    2019-05-07
***ical
Driver 5A 2-OUT High and Low Side Full Brdg/Half Brdg Inv/Non-Inv Automotive 10-Pin WSON EP T/R
***et Europe
100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 5A 10-Pin WSON T/R
***as Instruments
Automotive, 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125
***i-Key
IC GATE DRVR HALF-BRIDGE 10WSON
***ark
5A 100V Half-Bridgegatedriver Q Grade
***AS INST
The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
***NS
In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.
LM5113/LM5113-Q1 Half-Bridge Gate Driver
OMO Electronic LM5113/LM5113-Q1 Half-Bridge Gate Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2V. This clamping prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113/LM5113-Q1 are TTL logic compatible and can withstand input voltages up to 14V regardless of the VDD voltage. The LM5113/LM5113-Q1 has split gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently. The LM5113-Q1 devices are AEC-Q100 qualified for automotive applications.
型號 描述 庫存 價格
LM5113QDPRRQ1
DISTI # V72:2272_17086936		Driver 5A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv Automotive 10-Pin WSON EP T/R1421
  • 1000:$2.0610
  • 500:$2.4270
  • 250:$2.8200
  • 100:$2.9480
  • 25:$3.6300
  • 10:$3.6580
  • 1:$4.4770
LM5113QDPRRQ1
DISTI # V36:1790_17086936		Driver 5A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv Automotive 10-Pin WSON EP T/R0
  • 4500000:$1.8750
  • 2250000:$1.8760
  • 450000:$1.9440
  • 45000:$2.0420
  • 4500:$2.0580
LM5113QDPRRQ1
DISTI # V39:1801_17086936		Driver 5A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv Automotive 10-Pin WSON EP T/R0
  • 4500000:$1.8750
  • 2250000:$1.8760
  • 450000:$1.9440
  • 45000:$2.0420
  • 4500:$2.0580
LM5113QDPRRQ1
DISTI # 296-51311-1-ND		IC HALF-BRIDGE GATE DRVR 10WSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3421In Stock
  • 1000:$2.2308
  • 500:$2.6451
  • 100:$3.1071
  • 10:$3.7920
  • 1:$4.2200
LM5113QDPRRQ1
DISTI # 296-51311-6-ND		IC HALF-BRIDGE GATE DRVR 10WSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3421In Stock
  • 1000:$2.2308
  • 500:$2.6451
  • 100:$3.1071
  • 10:$3.7920
  • 1:$4.2200
LM5113QDPRRQ1
DISTI # 296-51311-2-ND		IC HALF-BRIDGE GATE DRVR 10WSON
RoHS: Compliant
Min Qty: 4500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4500:$2.0575
LM5113QDPRRQ1
DISTI # 31725099		Driver 5A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv Automotive 10-Pin WSON EP T/R9000
  • 4500:$2.0580
LM5113QDPRRQ1
DISTI # 31667355		Driver 5A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv Automotive 10-Pin WSON EP T/R1421
  • 4:$4.4770
LM5113QDPRRQ1
DISTI # LM5113QDPRRQ1		100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 5A 10-Pin WSON T/R (Alt: LM5113QDPRRQ1)
RoHS: Compliant
Min Qty: 4500
Container: Tape and Reel		Europe - 0
  • 45000:€1.7900
  • 27000:€1.8900
  • 18000:€1.9900
  • 9000:€2.2900
  • 4500:€2.5900
LM5113QDPRRQ1
DISTI # LM5113QDPRRQ1		100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 5A 10-Pin WSON T/R - Tape and Reel (Alt: LM5113QDPRRQ1)
RoHS: Compliant
Min Qty: 4500
Container: Reel		Americas - 0
  • 27000:$1.8900
  • 45000:$1.8900
  • 18000:$1.9900
  • 9000:$2.0900
  • 4500:$2.1900
LM5113QDPRRQ1Automotive, 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs8040
  • 1000:$1.7600
  • 750:$1.8400
  • 500:$2.1800
  • 250:$2.5700
  • 100:$2.7400
  • 25:$3.1300
  • 10:$3.3600
  • 1:$3.7300
LM5113QDPRRQ1
DISTI # 595-LM5113QDPRRQ1		Gate Drivers 5A 100V HALF-BRIDGEGATEDRIVER Q GRADE
RoHS: Compliant		1595
  • 1:$4.1000
  • 10:$3.6800
  • 100:$3.0100
  • 250:$2.8300
  • 500:$2.5600
  • 1000:$2.1600
  • 2500:$2.0500
  • 4500:$1.9800
圖片 型號 描述
OPA2365AQDRQ1

Mfr.#: OPA2365AQDRQ1

OMO.#: OMO-OPA2365AQDRQ1

 Operational Amplifiers - Op Amps 2.2V,50MHz,Lo-Noise Sgl-Sply RR Op Amp
LL4148

Mfr.#: LL4148

OMO.#: OMO-LL4148

 Diodes - General Purpose, Power, Switching Small Signal Diode
GS61004B-E01-MR

Mfr.#: GS61004B-E01-MR

OMO.#: OMO-GS61004B-E01-MR

 MOSFET 100V 45A E-Mode GaN
GS61008P-E05-MR

Mfr.#: GS61008P-E05-MR

OMO.#: OMO-GS61008P-E05-MR

 MOSFET 100V 80A E-Mode GaN
CSD19535KTT

Mfr.#: CSD19535KTT

OMO.#: OMO-CSD19535KTT

 MOSFET 100V, N ch NexFET MOSFETG , single D2PAK, 3.4mOhm 3-DDPAK/TO-263 -55 to 175
TMS320F28377DPTPT

Mfr.#: TMS320F28377DPTPT

OMO.#: OMO-TMS320F28377DPTPT

 32-bit Microcontrollers - MCU Dual-Core Delfino
CRCW06032K20FKEAC

Mfr.#: CRCW06032K20FKEAC

OMO.#: OMO-CRCW06032K20FKEAC

 Thick Film Resistors - SMD 1/10Watt 2.2Kohms 1% Commercial Use
GRM188C81C225KA12D

Mfr.#: GRM188C81C225KA12D

OMO.#: OMO-GRM188C81C225KA12D-MURATA-ELECTRONICS

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 2.2uF 16volts X6S 10%
OPA2365AQDRQ1

Mfr.#: OPA2365AQDRQ1

OMO.#: OMO-OPA2365AQDRQ1-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps 2.2V,50MHz,Lo-Noise Sgl-Sply RR Op Amp
LL4148

Mfr.#: LL4148

OMO.#: OMO-LL4148-ON-SEMICONDUCTOR

 DIODE GEN PURP 100V 200MA SOD80
可用性
庫存:
Available
訂購:
1984
輸入數量:
LM5113QDPRRQ1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$4.10
US$4.10
10
US$3.68
US$36.80
100
US$3.01
US$301.00
250
US$2.83
US$707.50
500
US$2.56
US$1 280.00
1000
US$2.16
US$2 160.00
2500
US$2.05
US$5 125.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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