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APT30GP60JDQ1

APT30GP60JDQ1
Mfr. #:
APT30GP60JDQ1
製造商:
Microchip / Microsemi
描述:
IGBT Modules FG, IGBT-COMBI, 600V, 30A, SOT-227
生命週期:
製造商新產品
數據表:
APT30GP60JDQ1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT30GP60JDQ1 DatasheetAPT30GP60JDQ1 Datasheet (P4-P6)APT30GP60JDQ1 Datasheet (P7-P9)
ECAD Model:
產品屬性
屬性值
製造商：
微芯片
產品分類：
IGBT 模塊
RoHS：
Y
產品：
IGBT 矽模塊
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
2.2 V
25 C 時的連續集電極電流：
67 A
柵極-發射極漏電流：
100 nA
Pd - 功耗：
245 W
包裝/案例：
ISOTOP-4
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
打包：
管子
品牌：
微芯片/Microsemi
安裝方式：
貼片/貼片
最大柵極發射極電壓：
20 V
產品類別：
IGBT 模塊
出廠包裝數量：
1
子類別：
IGBT
Tags
APT30GP, APT30G, APT30, APT3, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
IGBT Module N-Channel 600V 67A 20V SOT-227 Screw Mount
***i-Key
IGBT MODULE 600V 67A 245W ISOTOP
***ark
IGBT PT MOS 7 COMBI 600 V 40 A ISOTOP 4 SOT-227 TUBE ROHS COMPLIANT: YES
***et
Trans IGBT Chip N-CH 600V 86A 4-Pin SOT-227
*** Stop Electro
Insulated Gate Bipolar Transistor, 86A I(C), 600V V(BR)CES, N-Channel
***el Electronic
IGBT MODULE 600V 86A 284W ISOTOP
***ow.cn
Trans IGBT Module N-CH 600V 86A 284000mW
***ure Electronics
APT150GN60J Series 600 V 220 A Trench and Field Stop IGBT - SOT-227
***rochip
IGBT Fieldstop Low Frequency Single 600 V 150 A SOT-227
***et
Trans IGBT Chip N-CH 600V 220A 4-Pin SOT-227
*** Stop Electro
Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel
***el Electronic
IGBT MOD 600V 220A 536W ISOTOP
***th Star Micro
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
***ure Electronics
APT150GN60JDQ Series 600 V 220 A Trench and Field Stop IGBT - SOT-227
***rochip
IGBT Fieldstop Low Frequency Combi 600 V 150 A SOT-227
***et
Trans IGBT Chip N-CH 600V 220A 4-Pin SOT-227
***icontronic
Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel
***el Electronic
IGBT MOD 600V 220A 536W ISOTOP
***th Star Micro
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
***DA Technology Co., Ltd.
Product Description Demo for Development.
*** Electronics
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
***i-Key
IGBT MOD 600V 280A 940W SOT227B
***ource
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
***el Electronic
Trans IGBT Chip N-CH 600V 96A 4-Pin SOT-227 Rail
***et
PWR IGBT 39A,600V,SMPS N-CH W/DIODE TO-227
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 900V 115A 500000mW 4-Pin SOT-227B
***el Electronic
IGBT Modules 900V 70A 2.7V XPT IGBTs GenX3 w/ Diode
***i-Key
IGBT MOD 900V 115A 500W SOT227B
***ure Electronics
900V, 70a, 2.7Vce, SOT-227B, miniBLOC
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 115 / Collector-Emitter Voltage (Vceo) V = 900 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.7 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 500 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-227B / Pins = 4 / Mounting Type = SMD / Packaging = Tube / Reflow Temperature Max. °C = 260
型號 製造商 描述 庫存 價格
APT30GP60JDQ1
DISTI # APT30GP60JDQ1-ND		Microsemi CorporationIGBT 600V 67A 245W SOT227
RoHS: Compliant
Min Qty: 19
Container: Tube		Limited Supply - Call
  • 19:$25.7763
APT30GP60JDQ1
DISTI # APT30GP60JDQ1		Microchip Technology IncIGBT Module N-Channel 600V 67A 20V SOT-227 Screw Mount - Rail/Tube (Alt: APT30GP60JDQ1)
RoHS: Compliant
Min Qty: 19
Container: Tube		Americas - 0
  • 190:$17.2900
  • 95:$17.5900
  • 57:$18.0900
  • 38:$18.6900
  • 19:$19.3900
APT30GP60JDQ1
DISTI # 494-APT30GP60JDQ1		Microchip Technology IncIGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
RoHS: Compliant		0
    圖片 型號 描述
    APT30GT60BRG

    Mfr.#: APT30GT60BRG

    OMO.#: OMO-APT30GT60BRG

    		 IGBT Transistors FG, IGBT, 600V, 30A, TO-247, RoHS
    APT30GT60BRDQ2G

    Mfr.#: APT30GT60BRDQ2G

    OMO.#: OMO-APT30GT60BRDQ2G

    		 IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
    APT30GP60B2DLG

    Mfr.#: APT30GP60B2DLG

    OMO.#: OMO-APT30GP60B2DLG

    		 IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi
    APT30GF60JU3

    Mfr.#: APT30GF60JU3

    OMO.#: OMO-APT30GF60JU3

    		 IGBT Modules Power Module - IGBT
    APT30GF60JU3

    Mfr.#: APT30GF60JU3

    OMO.#: OMO-APT30GF60JU3-MICROSEMI

    		 IGBT Modules
    APT30GP60BC

    Mfr.#: APT30GP60BC

    OMO.#: OMO-APT30GP60BC-1190

    		 全新原裝
    APT30GP60BDQ2

    Mfr.#: APT30GP60BDQ2

    OMO.#: OMO-APT30GP60BDQ2-1190

    		 全新原裝
    APT30GP60BSC

    Mfr.#: APT30GP60BSC

    OMO.#: OMO-APT30GP60BSC-1190

    		 全新原裝
    APT30GP60JDF1

    Mfr.#: APT30GP60JDF1

    OMO.#: OMO-APT30GP60JDF1-1190

    		 全新原裝
    APT30GT60BRD2G

    Mfr.#: APT30GT60BRD2G

    OMO.#: OMO-APT30GT60BRD2G-1190

    		 全新原裝
    可用性
    庫存:
    Available
    訂購:
    3500
    輸入數量:
    APT30GP60JDQ1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    19
    US$25.27
    US$480.13
    25
    US$23.22
    US$580.50
    50
    US$22.52
    US$1 126.00
    100
    US$21.45
    US$2 145.00
    250
    US$19.71
    US$4 927.50
    500
    US$18.16
    US$9 080.00
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