IPW65R190CFDAFKSA1

Mfr. #:: IPW65R190CFDAFKSA1
製造商:: Infineon Technologies
描述:: RF Bipolar Transistors MOSFET N-Ch 650V 17.5A TO247-3
生命週期:: 製造商新產品
數據表:: IPW65R190CFDAFKSA1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: IPW65R190CFDAFKSA1 更多信息

產品屬性
屬性值

Tags: IPW65R190CF, IPW65R190C, IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPW65R190CFDAFKSA1 描述

***ure Electronics: Single N-Channel 650 V 190 mOhm 68 nC CoolMOS Power Mosfet - TO-247-3

***ical: Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-247 Tube

***Components: MOSFET 650V 17A CoolMOS CFDA Auto TO247

***i-Key: MOSFET N-CH 650V 17.5A TO247

***et Europe: MOS Power Transistors HV (>= 200V)

***ineon: 650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting

IPW65R190CFDAFKSA1 更多信息

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

型號	製造商	描述	庫存	價格
IPW65R190CFDAFKSA1 DISTI # 31039088	Infineon Technologies AG	Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	480	500:$2.9502 250:$3.2868 240:$3.4650
IPW65R190CFDAFKSA1 DISTI # IPW65R190CFDAFKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 17.5A TO247 RoHS: Compliant Min Qty: 240 Container: Tube	Temporarily Out of Stock	240:$3.8494
IPW65R190CFDAFKSA1 DISTI # V36:1790_06376985	Infineon Technologies AG	Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
IPW65R190CFDAFKSA1 DISTI # IPW65R190CFDAFKSA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Bulk (Alt: IPW65R190CFDAFKSA1) Min Qty: 153 Container: Bulk	Americas - 0	1530:$1.9900 459:$2.0900 765:$2.0900 306:$2.1900 153:$2.2900
IPW65R190CFDAFKSA1 DISTI # IPW65R190CFDAFKSA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW65R190CFDAFKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$2.1900 1440:$2.2900 480:$2.3900 960:$2.3900 240:$2.4900
IPW65R190CFDAFKSA1 DISTI # IPW65R190CFDA	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: IPW65R190CFDA) RoHS: Compliant Min Qty: 240	Asia - 0	12000:$2.2717 6000:$2.3008 2400:$2.3306 1200:$2.3613 720:$2.4251 480:$2.4925 240:$2.5637
IPW65R190CFDAFKSA1 DISTI # SP000928268	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP000928268) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.9900 100:€2.0900 500:€2.0900 50:€2.1900 25:€2.2900 10:€2.4900 1:€3.0900
IPW65R190CFDAFKSA1 DISTI # 726-IPW65R190CFDAFKS	Infineon Technologies AG	MOSFET N-Ch 650V 17.5A TO247-3 RoHS: Compliant	190	1:$4.7500 10:$4.0300 100:$3.5000 250:$3.3200 500:$2.9800
IPW65R190CFDA DISTI # 726-IPW65R190CFDA	Infineon Technologies AG	MOSFET N-Ch 650V 17.5A TO247-3 RoHS: Compliant	11	1:$4.7500 10:$4.0300 100:$3.5000 250:$3.3200 500:$2.9800
IPW65R190CFDAFKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant	240	1000:$2.1600 500:$2.2700 100:$2.3700 25:$2.4700 1:$2.6600
IPW65R190CFDAFKSA1 DISTI # 8577129	Infineon Technologies AG	MOSFET 650V 17A COOLMOS CFDA AUTO TO247, TU	450	480:£1.5590 240:£1.5910

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