IPW65R190C6

Mfr. #:: IPW65R190C6
製造商:: Rochester Electronics, LLC
描述:: Darlington Transistors MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS C6
生命週期:: 製造商新產品
數據表:: IPW65R190C6 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: CoolMOS C6

打包: 管子

部分別名: IPW65R190C6FKSA1 IPW65R190C6XK SP000863902

單位重量: 1.340411 oz

安裝方式: 通孔

商品名: 酷摩

包裝盒: TO-247-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 151 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 10 ns

上升時間: 12 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 20.2 A

Vds-漏-源-擊穿電壓: 700 V

Rds-On-Drain-Source-Resistance: 190 mOhms

晶體管極性: N通道

典型關斷延遲時間: 133 nS

Qg-門電荷: 73 nC

Tags: IPW65R190C6, IPW65R190C, IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPW65R190C6 描述

***ical: Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-247 Tube

***et: Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-247

***et Europe: Trans MOSFET N-CH 700V 20.2A 3-Pin TO-247 Tube

***i-Key: MOSFET N-CH 650V 20.2A TO247

***ronik: N-CH 650V 20,2A 190mOhm TO247-3 RoHSconf

***ukat: N-Ch 650V 20,2A 151W 0,19R TO247

***ineon: CoolMOS C6 combines 's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Market price

型號	製造商	描述	庫存	價格
IPW65R190C6FKSA1 DISTI # IPW65R190C6FKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 20.2A TO247 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
IPW65R190C6 DISTI # 726-IPW65R190C6	Infineon Technologies AG	MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS C6 RoHS: Compliant	91	1:$3.8300 10:$3.2600 100:$2.8200
IPW65R190C6FKSA1 DISTI # N/A	Infineon Technologies AG	MOSFET HIGH POWER_LEGACY	0
IPW65R190C6	Infineon Technologies AG	Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant	470	1000:$1.9600 500:$2.0600 100:$2.1400 25:$2.2400 1:$2.4100
IPW65R190C6FKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant	4080	1000:$1.9600 500:$2.0600 100:$2.1400 25:$2.2400 1:$2.4100
IPW65R190C6FKSA1 DISTI # IPW65R190C6	Infineon Technologies AG	N-Ch 650V 20,2A 151W 0,19R TO247 RoHS: Compliant	265	1:€3.8200 10:€1.8200 50:€1.3200 100:€1.2600

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