FDMT800100DC

Mfr. #:: FDMT800100DC
製造商:: ON Semiconductor
描述:: MOSFET PT5 100V/20V Nch Dual Cool PowerTrench MOSFET
生命週期:: 製造商新產品
數據表:: FDMT800100DC 數據表
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更多信息:: FDMT800100DC 更多信息

產品屬性
屬性值

製造商: 仙童半導體

產品分類: 晶體管 - FET、MOSFET - 單

系列: 動力戰壕

打包: 捲軸

安裝方式: 貼片/貼片

商品名: Dual Cool 88

包裝盒: Power88-8

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 156 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 10 ns

上升時間: 18 ns

VGS-柵極-源極-電壓: +/- 20 V

Id 連續漏極電流: 162 A

Vds-漏-源-擊穿電壓: 100 V

VGS-th-Gate-Source-Threshold-Voltage: 2 V

Rds-On-Drain-Source-Resistance: 5.39 mOhms

晶體管極性: N通道

典型關斷延遲時間: 40 ns

典型開啟延遲時間: 29 ns

Qg-門電荷: 79 nC

正向跨導最小值: 66 S

通道模式: 增強

Tags: FDMT8001, FDMT8, FDMT, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMT800100DC 描述

***ark: PT5 100V/20V Nch Dual Cool PowerTrench MOSFET - 8LD, PQFN, NON-JEDEC, MV, 8.0X8.0 MM

***Semiconductor: N-Channel PowerTrench® MOSFET, Dual Cool™ 88, 100V, 162A, 2.95mΩ

***ical: Trans MOSFET N-CH Si 100V 24A 8-Pin QFN EP T/R

***et Europe: Trans MOSFET N-CH 100V 24A 8-Pin PQFN T/R

***et: PT5 100V/20V NCH DUAL COOL POWERTRENCH MOSFET

***ure Electronics: MOSFET N-CH 100V 24A

***i-Key: MOSFET P-CH 20V

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 100V, 162A, DUAL COOL 88; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:156W; Transistor Case Style:Dual Cool 88; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:PowerTrench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

***nell: MOSFET, CA-N, 100V 162A DOP. FREDDO 5688; Polarità Transistor:Canale N; Corrente Continua di Drain Id:162A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:156W; Modello Case Transistor:Dual Cool 88; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:PowerTrench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)

FDMT800100DC 更多信息

FDMT8001x N-Channel Dual Cool™ PowerTrench MOSFET: ON Semiconductor FDMT8001x N-channel dual cool™ PowerTrench® MOSFETs combine Dual Cool™ and PowerTrench® processes to offer very low RDS(on) and maintain excellent switching performance. The FDMT8001x maintains extremely low junction to ambient resistance.Learn More

Solutions for Energy Infrastructure: ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

Market price

型號	製造商	描述	庫存	價格
FDMT800100DC DISTI # FDMT800100DCCT-ND	ON Semiconductor	MOSFET N-CH 100V 24A RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1650In Stock	1000:$3.8239 500:$4.3904 100:$5.2401 10:$6.3730 1:$7.0800
FDMT800100DC DISTI # FDMT800100DCDKR-ND	ON Semiconductor	MOSFET N-CH 100V 24A RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1650In Stock	1000:$3.8239 500:$4.3904 100:$5.2401 10:$6.3730 1:$7.0800
FDMT800100DC DISTI # FDMT800100DCTR-ND	ON Semiconductor	MOSFET N-CH 100V 24A RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$3.5750
FDMT800100DC DISTI # FDMT800100DC	ON Semiconductor	Trans MOSFET N-CH 100V 24A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMT800100DC) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$3.1900 6000:$3.1900 12000:$3.1900 18000:$3.0900 30000:$2.9900
FDMT800100DC DISTI # 49Y8342	ON Semiconductor	FET 100V 2.95 MOHM PQFN88 / REEL	0	1:$5.0000
FDMT800100DC DISTI # 57AC1882	ON Semiconductor	MOSFET, N-CH, 100V, 162A, DUAL COOL 88,Transistor Polarity:N Channel,Continuous Drain Current Id:162A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes	425	1:$5.9500 10:$5.3800 25:$5.1300 50:$4.7900 100:$4.4500 250:$4.2600 500:$3.8800 1000:$3.3800
FDMT800100DC DISTI # 512-FDMT800100DC	ON Semiconductor	MOSFET FET 100V 2.95 MOHM PQFN88 RoHS: Compliant	550	1:$5.9500 10:$5.3800 25:$5.1300 100:$4.4500 250:$4.2600 500:$3.8800 1000:$3.3800 3000:$3.2600
FDMT800100DC DISTI # 2860230	ON Semiconductor	MOSFET, N-CH, 100V, 162A, DUAL COOL 88 RoHS: Compliant	600	1:£5.0700 10:£3.9600 100:£3.4300 250:£3.2800 500:£3.0000
FDMT800100DC DISTI # 2860230	ON Semiconductor	MOSFET, N-CH, 100V, 162A, DUAL COOL 88 RoHS: Compliant	425	1:$11.2900 10:$10.1600 100:$8.3600 500:$7.0000 1000:$6.1000

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