SIHB22N60ET5-GE3

Mfr. #:: SIHB22N60ET5-GE3
製造商:: Vishay / Siliconix
描述:: MOSFET 600V Vds E Series D2PAK TO-263
生命週期:: 製造商新產品
數據表:: SIHB22N60ET5-GE3 數據表
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ECAD Model:
更多信息:: SIHB22N60ET5-GE3 更多信息

產品屬性
屬性值

製造商：: 威世

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-263-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 21 A

Rds On - 漏源電阻：: 180 mOhms

Vgs th - 柵源閾值電壓：: 4 V

Vgs - 柵源電壓：: 30 V

Qg - 門電荷：: 57 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 227 W

配置：: 單身的

打包：: 捲軸

系列：: E

品牌：: 威世 / Siliconix

秋季時間：: 35 ns

產品類別：: MOSFET

上升時間：: 27 ns

出廠包裝數量：: 800

子類別：: MOSFET

典型關斷延遲時間：: 66 ns

典型的開啟延遲時間：: 18 ns

單位重量：: 0.077603 oz

Tags: SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHB22N60ET5-GE3 描述

***i-Key: MOSFET N-CH 600V 21A TO263

***ark: N-Channel 600V

***et: N-CHANNEL 600V

SIHB22N60ET5-GE3 更多信息

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

型號	製造商	描述	庫存	價格
SIHB22N60ET5-GE3 DISTI # SIHB22N60ET5-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 21A TO263 RoHS: Not compliant Min Qty: 800 Container: Tape & Reel (TR)	Temporarily Out of Stock	800:$2.5796
SIHB22N60ET5-GE3 DISTI # SIHB22N60ET5-GE3	Vishay Intertechnologies	N-CHANNEL 600V - Tape and Reel (Alt: SIHB22N60ET5-GE3) RoHS: Not Compliant Min Qty: 800 Container: Reel	Americas - 0	8000:$1.7900 4800:$1.8900 1600:$1.9900 3200:$1.9900 800:$2.0900
SIHB22N60ET5-GE3 DISTI # 78-SIHB22N60ET5-GE3	Vishay Intertechnologies	MOSFET 600V Vds E Series D2PAK TO-263 RoHS: Compliant	0	800:$2.0800 2400:$1.9700

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