SIHB22N65E-GE3

SIHB22N65E-GE3
Mfr. #:
SIHB22N65E-GE3
製造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
生命週期:
製造商新產品
數據表:
SIHB22N65E-GE3 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
SIHB22N65E-GE3 更多信息
產品屬性
屬性值
Tags
SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK
***et
N-CHANNEL 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHB22N65E-GE3
DISTI # SIHB22N65E-GE3-ND
Vishay SiliconixMOSFET N-CH 650V 22A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube
5In Stock
  • 1000:$2.6642
  • 500:$3.1590
  • 100:$3.9012
  • 10:$4.7580
  • 1:$5.3300
SIHB22N65E-GE3
DISTI # SIHB22N65E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 22A 3-Pin D2PAK T/R - Tape and Reel (Alt: SIHB22N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$2.4900
  • 2000:$2.3900
  • 4000:$2.2900
  • 6000:$2.1900
  • 10000:$2.1900
SIHB22N65E-GE3
DISTI # 40X8670
Vishay IntertechnologiesMOSFET Transistor, N Channel, 22 A, 650 V, 0.15 ohm, 10 V RoHS Compliant: Yes1461
  • 1:$4.8500
  • 10:$4.0200
  • 25:$3.7800
  • 50:$3.5500
  • 100:$3.3100
  • 500:$2.8900
SIHB22N65E-GE3
DISTI # 78-SIHB22N65E-GE3
Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
0
  • 1:$4.8500
  • 10:$4.0200
  • 100:$3.3100
  • 250:$3.2100
  • 500:$2.8900
SIHB22N65E-GE3
DISTI # 2400375
Vishay IntertechnologiesMOSFET, N CH, 650V, 22A, TO-263-3
RoHS: Compliant
1461
  • 1:$7.6800
  • 10:$6.3700
  • 100:$5.2400
  • 250:$5.0900
  • 500:$4.5800
SIHB22N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
Americas -
    SIHB22N65E-GE3
    DISTI # 2400375
    Vishay IntertechnologiesMOSFET, N CH, 650V, 22A, TO-263-3
    RoHS: Compliant
    1461
    • 1:£4.0800
    • 10:£3.0400
    • 100:£2.5000
    • 250:£2.4300
    • 500:£2.1900
    圖片 型號 描述
    SIHB22N60AE-GE3

    Mfr.#: SIHB22N60AE-GE3

    OMO.#: OMO-SIHB22N60AE-GE3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60E-E3

    Mfr.#: SIHB22N60E-E3

    OMO.#: OMO-SIHB22N60E-E3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60E-GE3

    Mfr.#: SIHB22N60E-GE3

    OMO.#: OMO-SIHB22N60E-GE3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60ET5-GE3

    Mfr.#: SIHB22N60ET5-GE3

    OMO.#: OMO-SIHB22N60ET5-GE3

    MOSFET 600V Vds E Series D2PAK TO-263
    SIHB22N60S-E3

    Mfr.#: SIHB22N60S-E3

    OMO.#: OMO-SIHB22N60S-E3-126

    IGBT Transistors MOSFET 600V N-Channel Superjunction D2PAK
    SIHB22N60E-E3

    Mfr.#: SIHB22N60E-E3

    OMO.#: OMO-SIHB22N60E-E3-VISHAY

    RF Bipolar Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
    SIHB22N60AE-GE3

    Mfr.#: SIHB22N60AE-GE3

    OMO.#: OMO-SIHB22N60AE-GE3-VISHAY

    MOSFET N-CH 600V 20A D2PAK
    SIHB22N60E-GE3

    Mfr.#: SIHB22N60E-GE3

    OMO.#: OMO-SIHB22N60E-GE3-VISHAY

    MOSFET N-CH 600V 21A D2PAK
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3-VISHAY

    MOSFET N-CH 600V 21A TO263
    SIHB22N60ET5-GE3

    Mfr.#: SIHB22N60ET5-GE3

    OMO.#: OMO-SIHB22N60ET5-GE3-VISHAY

    MOSFET N-CH 600V 21A TO263
    可用性
    庫存:
    Available
    訂購:
    1000
    輸入數量:
    SIHB22N65E-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$3.28
    US$3.28
    10
    US$3.12
    US$31.21
    100
    US$2.96
    US$295.65
    500
    US$2.79
    US$1 396.15
    1000
    US$2.63
    US$2 628.00
    由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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