SI6562CDQ-T1-GE3

Mfr. #:: SI6562CDQ-T1-GE3
製造商:: Vishay
描述:: MOSFET N/P-CH 20V 6.7A 8-TSSOP
生命週期:: 製造商新產品
數據表:: SI6562CDQ-T1-GE3 數據表
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更多信息:: SI6562CDQ-T1-GE3 更多信息

產品屬性
屬性值

製造商: 威世

產品分類: FET - 陣列

系列: 溝槽FETR

打包: Digi-ReelR 替代包裝

部分別名: SI6562CDQ-GE3

單位重量: 0.005573 oz

安裝方式: 貼片/貼片

包裝盒: 8-TSSOP (0.173", 4.40mm Width)

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 2 Channel

供應商-設備-包: 8-TSSOP

配置: 雙雙源

FET型: N 和 P 溝道

最大功率: 1.6W, 1.7W

晶體管型: 1 N-Channel 1 P-Channel

漏源電壓 Vdss: 20V

輸入電容-Ciss-Vds: 850pF @ 10V

FET-Feature: 邏輯電平門

Current-Continuous-Drain-Id-25°C: 6.7A, 6.1A

Rds-On-Max-Id-Vgs: 22 mOhm @ 5.7A, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

柵極電荷-Qg-Vgs: 23nC @ 10V

鈀功耗: 1.1 W 1.2 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 10 ns 25 ns

上升時間: 10 ns 25 ns

VGS-柵極-源極-電壓: 12 V

Id 連續漏極電流: 5.7 A

Vds-漏-源-擊穿電壓: 20 V

Rds-On-Drain-Source-Resistance: 18 mOhms 24 mOhms

晶體管極性: N 溝道 P 溝道

典型關斷延遲時間: 25 nS 45 nS

典型開啟延遲時間: 12 nS 30 nS

通道模式: 增強

Tags: SI6562CDQ-T, SI6562CDQ, SI6562C, SI656, SI65, SI6

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI6562CDQ-T1-GE3 描述

***ure Electronics: Si6562CDQ Series 20 V 0.022 Ohm SMT Dual N & P Channel MOSFET - TSSOP-8

***ical: Trans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R

***ark: Mosfet, N & P Channel, 20V, 6.7A, Tssop-8, Full Reel; Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.7A; On Resistance Rds(On):0.18Ohm; Transistor Mounting:surface Mountrohs Compliant: No

SI6562CDQ-T1-GE3 更多信息

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

型號	製造商	描述	庫存	價格
SI6562CDQ-T1-GE3 DISTI # SI6562CDQ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 6.7A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3025In Stock	1000:$0.5013 500:$0.6350 100:$0.8189 10:$1.0360 1:$1.1700
SI6562CDQ-T1-GE3 DISTI # SI6562CDQ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 6.7A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3025In Stock	1000:$0.5013 500:$0.6350 100:$0.8189 10:$1.0360 1:$1.1700
SI6562CDQ-T1-GE3 DISTI # SI6562CDQ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 6.7A 8-TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.4543
SI6562CDQ-T1-GE3 DISTI # SI6562CDQ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6562CDQ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	3000:$0.4289 6000:$0.4159 12000:$0.3989 18000:$0.3879 30000:$0.3779
SI6562CDQ-T1-GE3 DISTI # 26T3807	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R - Product that comes on tape, but is not reeled (Alt: 26T3807) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.0400 25:$0.8500 50:$0.7510 100:$0.6520 250:$0.6070 500:$0.5610 1000:$0.4430
SI6562CDQ-T1-GE3 DISTI # 26T3807	Vishay Intertechnologies	MOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6.7A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mVRoHS Compliant: Yes	0	1000:$0.4430 500:$0.5610 250:$0.6070 100:$0.6520 50:$0.7510 25:$0.8500 1:$1.0400
SI6562CDQ-T1-GE3. DISTI # 28AC2157	Vishay Intertechnologies	MOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-8, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6.7A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:4.5V,Product Range:- RoHS Compliant: No	3000	30000:$0.3660 18000:$0.3720 12000:$0.3780 6000:$0.3930 3000:$0.4030 1:$0.4130
SI6562CDQ-T1-GE3 DISTI # 781-SI6562CDQ-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR RoHS: Compliant	835	1:$1.0400 10:$0.8500 100:$0.6520 500:$0.5610 1000:$0.4430 3000:$0.4130 6000:$0.3930 9000:$0.3780
SI6562CDQ-T1-GE3	Vishay Intertechnologies	Si6562CDQ Series 20 V 0.022 Ohm SMT Dual N & P Channel MOSFET - TSSOP-8 RoHS: Compliant	9000Reel	3000:$0.4450
SI6562CDQ-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR RoHS: Compliant	Americas - 12000
SI6562CDQ-T1-GE3 DISTI # 2458751	Vishay Intertechnologies	MOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP- RoHS: Compliant	0	9000:$0.5990 6000:$0.6220 3000:$0.6540 1000:$0.7020 500:$0.8880 100:$1.0400 10:$1.3500 1:$1.6500
SI6562CDQ-T1-GE3 DISTI # 2335341	Vishay Intertechnologies	MOSFET, N & P CHANNEL, 20V, 6.7A,TSSOP-6 RoHS: Compliant	3038	1000:$0.8120 500:$0.8880 100:$1.0400 10:$1.3500 1:$1.6500
SI6562CDQ-T1-GE3 DISTI # 2335341	Vishay Intertechnologies	MOSFET, N & P CHANNEL, 20V, 6.7A,TSSOP-6 RoHS: Compliant	0	500:£0.4330 250:£0.4670 100:£0.5020 25:£0.6540 5:£0.7310

相關產品

圖片	型號	描述
	Mfr.#: SI6562CDQ-T1-GE3 OMO.#: OMO-SI6562CDQ-T1-GE3	MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR
	Mfr.#: SI6562CDQ-T1-GE3-CUT TAPE OMO.#: OMO-SI6562CDQ-T1-GE3-CUT-TAPE-1190	全新原裝
	Mfr.#: SI6562CD OMO.#: OMO-SI6562CD-1190	全新原裝
	Mfr.#: SI6562CD-T1-GE3 OMO.#: OMO-SI6562CD-T1-GE3-1190	全新原裝
	Mfr.#: SI6562CDQ OMO.#: OMO-SI6562CDQ-1190	全新原裝
	Mfr.#: SI6562CDQ-T1-E3 OMO.#: OMO-SI6562CDQ-T1-E3-1190	全新原裝
	Mfr.#: SI6562CDQ-T1-GE3 OMO.#: OMO-SI6562CDQ-T1-GE3-VISHAY	MOSFET N/P-CH 20V 6.7A 8-TSSOP

可用性

庫存:: Available
訂購:: 5000
輸入數量:

SI6562CDQ-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$0.56~~; ~~US$0.56~~

10: ~~US$0.53~~; ~~US$5.34~~

100: ~~US$0.51~~; ~~US$50.63~~

500: ~~US$0.48~~; ~~US$239.05~~

1000: ~~US$0.45~~; ~~US$450.00~~

由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。

從...開始

SI6562CDQ-T 3
SI6562CDQ 4
SI6562C 6
SI656 13
SI65 44
SI6 530

SI6562CDQ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes