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| PartNumber | SI6562CD | SI6562CD-T1-GE3 | SI6562CDQ |
| Description | |||
| Manufacturer | - | - | VISHAY |
| Product Category | - | - | FETs - Arrays |
| Series | - | - | TrenchFETR |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Part Aliases | - | - | SI6562CDQ-GE3 |
| Unit Weight | - | - | 0.005573 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | 8-TSSOP (0.173", 4.40mm Width) |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 2 Channel |
| Supplier Device Package | - | - | 8-TSSOP |
| Configuration | - | - | Dual Dual Source |
| FET Type | - | - | N and P-Channel |
| Power Max | - | - | 1.6W, 1.7W |
| Transistor Type | - | - | 1 N-Channel 1 P-Channel |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 850pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 6.7A, 6.1A |
| Rds On Max Id Vgs | - | - | 22 mOhm @ 5.7A, 4.5V |
| Vgs th Max Id | - | - | 1.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 23nC @ 10V |
| Pd Power Dissipation | - | - | 1.1 W 1.2 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 10 ns 25 ns |
| Rise Time | - | - | 10 ns 25 ns |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 5.7 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 18 mOhms 24 mOhms |
| Transistor Polarity | - | - | N-Channel P-Channel |
| Typical Turn Off Delay Time | - | - | 25 nS 45 nS |
| Typical Turn On Delay Time | - | - | 12 nS 30 nS |
| Channel Mode | - | - | Enhancement |