SUD50P10-43L-E3

SUD50P10-43L-E3
Mfr. #:
SUD50P10-43L-E3
製造商:
Vishay / Siliconix
描述:
MOSFET 100V 37A 136W 43mohm @ 10V
生命週期:
製造商新產品
數據表:
SUD50P10-43L-E3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SUD50P10-43L-E3 DatasheetSUD50P10-43L-E3 Datasheet (P4-P6)SUD50P10-43L-E3 Datasheet (P7-P9)
ECAD Model:
產品屬性
屬性值
製造商:
威世
產品分類:
MOSFET
RoHS:
E
技術:
安裝方式:
貼片/貼片
包裝/案例:
TO-252-3
通道數:
1 Channel
晶體管極性:
P-通道
Vds - 漏源擊穿電壓:
100 V
Id - 連續漏極電流:
37.1 A
Rds On - 漏源電阻:
43 mOhms
Vgs th - 柵源閾值電壓:
1 V
Vgs - 柵源電壓:
10 V
Qg - 門電荷:
106 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
136 W
配置:
單身的
頻道模式:
增強
商品名:
溝槽場效應晶體管
打包:
捲軸
高度:
2.38 mm
長度:
6.73 mm
系列:
南德
晶體管類型:
1 P-Channel
寬度:
6.22 mm
品牌:
威世 / Siliconix
正向跨導 - 最小值:
38 S
秋季時間:
100 ns
產品類別:
MOSFET
上升時間:
20 ns, 160 ns
出廠包裝數量:
2000
子類別:
MOSFET
典型關斷延遲時間:
100 ns, 110 ns
典型的開啟延遲時間:
15 ns, 42 ns
單位重量:
0.050795 oz
Tags
SUD50P10-43L, SUD50P1, SUD50P, SUD50, SUD5, SUD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 100 V 0.043 Ohm Surface Mount Power MosFet - TO-252-3
***roFlash
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, P CH, -100V, -38A, TO-252AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-38A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:136W; Operating Temperature Min:-50°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:-
***emi
N-Channel Power MOSFET, UniFETTM II, 500 V, 6.5 A, 850 mΩ, DPAK
***ure Electronics
Single N-Channel 500 V 90 W 18 nC Silicon Surface Mount Mosfet - TO-252-3
***ark
N-Channel UniFETTM II MOSFET 500V, 6.5A, 850m / REEL RoHS Compliant: Yes
***roFlash
Power Field-Effect Transistor, 6.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***icroelectronics
N-Channel 400V - 0.85 Ohm - 5.4A Zener-Protected SuperMESH(TM) POWER MOSFET
***ure Electronics
N-Channel 400 V 1 Ohm Surface Mount SuperMESH Power MosFet - TO-252
*** Source Electronics
Trans MOSFET N-CH 400V 5.4A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 400V 5.4A DPAK
***va Crawler
N-channel 400 V, 0.85 Ohm typ., 5.4 A SuperMESH POWER Mosfet in DPAK package
***ark
MOSFET, N CHANNEL, 400V, 5.4A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***SIT Distribution GmbH
Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***enic
400V 5.4A 850m´Î@10V2.7A 70W 3.75V@50uA 18pF@25V N Channel 535pF@25V 19nC@0~10V -55¡Í~+150¡Í@(Tj) TO-252-3(DPAK) MOSFETs ROHS
***emi
N-Channel Power MOSFET, QFET®, 400 V, 4.5 A, 1.0 Ω, DPAK
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N CH, 400V, 4.5A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.83ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:48W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ure Electronics
N-Channel 400 V 4.5 A 1 Ohm SMT QFET® Mosfet - D-PAK
***et
Trans MOSFET N-CH 400V 4.5A 3-Pin(2+Tab) DPAK T/R
***ark
TAPE REEL / DXPAK, 400V, NCH, MOSFET
*** Stop Electro
Power Field-Effect Transistors
***ure Electronics
Single P-Channel 400 V 7 Ohm Surface Mount HEXFET Power MOSFET in a D-PAK-3
***icontronic
Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
Mosfet, P-Ch, 400V, 1.8A, To-252; Transistor Polarity:p Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:1.8A; On Resistance Rds(On):7Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
***ment14 APAC
MOSFET, P, -400V, -1.8A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:400V; On Resistance Rds(on):7ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-1.8A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.5°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:7.2A; Termination Type:SMD; Voltage Vds Typ:-400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V
***ure Electronics
Single N-Channel 400 V 1.8 Ohms Surface Mount Power Mosfet - TO-252
***SIT Distribution GmbH
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:3.1A; On Resistance Rds(On):1.8Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: No
***ment14 APAC
MOSFET, N, 400V, 3.1A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:3.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; Package / Case:DPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:12A; SMD Marking:IRFR320; Termination Type:SMD; Voltage Vds:400V; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
型號 製造商 描述 庫存 價格
SUD50P10-43L-E3
DISTI # V72:2272_09215466
Vishay IntertechnologiesTrans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK
RoHS: Compliant
1779
  • 1000:$1.2014
  • 500:$1.4957
  • 250:$1.5417
  • 100:$1.7131
  • 25:$2.1862
  • 10:$2.1955
  • 1:$2.9108
SUD50P10-43L-E3
DISTI # V36:1790_09215466
Vishay IntertechnologiesTrans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK
RoHS: Compliant
0
    SUD50P10-43L-E3
    DISTI # SUD50P10-43L-E3CT-ND
    Vishay SiliconixMOSFET P-CH 100V 37.1A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    8728In Stock
    • 1000:$1.3486
    • 500:$1.6277
    • 100:$1.9811
    • 10:$2.4650
    • 1:$2.7400
    SUD50P10-43L-E3
    DISTI # SUD50P10-43L-E3DKR-ND
    Vishay SiliconixMOSFET P-CH 100V 37.1A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    8728In Stock
    • 1000:$1.3486
    • 500:$1.6277
    • 100:$1.9811
    • 10:$2.4650
    • 1:$2.7400
    SUD50P10-43L-E3
    DISTI # SUD50P10-43L-E3TR-ND
    Vishay SiliconixMOSFET P-CH 100V 37.1A TO252
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)
    8000In Stock
    • 6000:$1.1739
    • 2000:$1.2190
    SUD50P10-43L-E3
    DISTI # 33935277
    Vishay IntertechnologiesTrans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK
    RoHS: Compliant
    24000
    • 2000:$0.7594
    SUD50P10-43L-E3
    DISTI # 33733940
    Vishay IntertechnologiesTrans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK
    RoHS: Compliant
    2000
    • 2000:$1.5781
    SUD50P10-43L-E3
    DISTI # 33600783
    Vishay IntertechnologiesTrans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK
    RoHS: Compliant
    1779
    • 6:$2.9108
    SUD50P10-43L-E3
    DISTI # 31607780
    Vishay IntertechnologiesTrans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK
    RoHS: Compliant
    30
    • 8:$3.3250
    SUD50P10-43L-E3
    DISTI # SUD50P10-43L-E3
    Vishay IntertechnologiesTrans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SUD50P10-43L-E3)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel
    Americas - 8000
    • 8000:$1.0900
    • 12000:$1.0900
    • 20000:$1.0900
    • 2000:$1.1900
    • 4000:$1.1900
    SUD50P10-43L-E3
    DISTI # SUD50P10-43L-E3
    Vishay IntertechnologiesTrans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK (Alt: SUD50P10-43L-E3)
    RoHS: Compliant
    Min Qty: 2000
    Europe - 0
    • 20000:€0.7439
    • 12000:€0.7779
    • 8000:€0.8799
    • 4000:€1.0849
    • 2000:€1.5119
    SUD50P10-43L-E3
    DISTI # 79K3483
    Vishay IntertechnologiesMOSFET, P CHANNEL, -100V, -38A, TO-252-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-38A,Drain Source Voltage Vds:-100V,On Resistance Rds(on):0.036ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes1929
    • 500:$1.5300
    • 250:$1.6300
    • 100:$1.7400
    • 50:$1.9100
    • 25:$2.0700
    • 10:$2.2400
    • 1:$2.7100
    SUD50P10-43L-E3.
    DISTI # 30AC0990
    Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-38A,Drain Source Voltage Vds:-100V,On Resistance Rds(on):0.036ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:136W,No. of Pins:3Pins RoHS Compliant: Yes8000
    • 8000:$1.0900
    • 1:$1.1900
    SUD50P10-43L-E3Vishay IntertechnologiesSingle P-Channel 100 V 0.043 Ohm Surface Mount Power MosFet - TO-252-3
    RoHS: Compliant
    4000Reel
    • 2000:$1.1200
    SUD50P10-43L-E3
    DISTI # 781-SUD50P10-43L-E3
    Vishay IntertechnologiesMOSFET 100V 37A 136W 43mohm @ 10V
    RoHS: Compliant
    8937
    • 1:$2.6700
    • 10:$2.2100
    • 100:$1.7200
    • 500:$1.5000
    • 1000:$1.2400
    • 2000:$1.1600
    • 4000:$1.1200
    SUD50P10-43L-E3
    DISTI # TMOS2525
    Vishay IntertechnologiesP-CH 100V 37A 43mOhm TO252
    RoHS: Compliant
    Stock DE - 0Stock HK - 0Stock US - 0
    • 2000:$1.8500
    • 4000:$1.4300
    SUD50P10-43L-E3
    DISTI # XSFP00000078304
    Vishay SiliconixSingle P-Channel 100 V 0.043 Ohm Surface MountPowerMosFet - TO-252-3
    RoHS: Compliant
    4000 in Stock0 on Order
    • 4000:$1.4900
    • 2000:$1.6000
    SUD50P10-43L-E3.Vishay IntertechnologiesMOSFET 100V 37A 136W 43mohm @ 10VAmericas - 1780
    • 10:$1.9980
    • 100:$1.5480
    • 250:$1.4540
    • 500:$1.3590
    • 1000:$1.3090
    SUD50P10-43L-E3Vishay IntertechnologiesMOSFET 100V 37A 136W 43mohm @ 10VAmericas - 10000
    • 2000:$1.1900
    • 4000:$1.1600
    • 10000:$1.0900
    SUD50P10-43L-E3
    DISTI # 2335409
    Vishay IntertechnologiesMOSFET, P CH, -100V, -38A, TO-252AA9022
    • 500:£1.1900
    • 250:£1.2700
    • 100:£1.3500
    • 10:£1.7500
    • 1:£2.3900
    SUD50P10-43L-E3
    DISTI # 2335409
    Vishay IntertechnologiesMOSFET, P CH, -100V, -38A, TO-252AA
    RoHS: Compliant
    4554
    • 2000:$1.8500
    • 1000:$1.8800
    • 500:$2.2800
    • 100:$2.5900
    • 10:$3.3500
    • 1:$4.0400
    SUD50P10-43L-E3
    DISTI # C1S803601351513
    Vishay IntertechnologiesTrans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK
    RoHS: Compliant
    30
    • 10:$2.1400
    • 1:$2.6600
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    可用性
    庫存:
    Available
    訂購:
    1991
    輸入數量:
    SUD50P10-43L-E3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$2.67
    US$2.67
    10
    US$2.21
    US$22.10
    100
    US$1.72
    US$172.00
    500
    US$1.50
    US$750.00
    1000
    US$1.24
    US$1 240.00
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