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| PartNumber | SUD50P10-43L-E3 | SUD50P10-43L-GE3 |
| Description | MOSFET 100V 37A 136W 43mohm @ 10V | MOSFET 100V 37A P-Channel |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 37.1 A | 36.4 A |
| Rds On Drain Source Resistance | 43 mOhms | 43 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V |
| Vgs Gate Source Voltage | 10 V | 10 V |
| Qg Gate Charge | 106 nC | 106 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C |
| Pd Power Dissipation | 136 W | 113.6 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 2.38 mm | 2.38 mm |
| Length | 6.73 mm | 6.73 mm |
| Series | SUD | SUD |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 38 S | 38 S |
| Fall Time | 100 ns | 100 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 20 ns, 160 ns | 20 ns |
| Factory Pack Quantity | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 100 ns, 110 ns | 110 ns |
| Typical Turn On Delay Time | 15 ns, 42 ns | 15 ns |
| Unit Weight | 0.050795 oz | 0.018695 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SUD50P10-43L-E3 | MOSFET 100V 37A 136W 43mohm @ 10V | |
| SUD50P10-43L-GE3 | MOSFET 100V 37A P-Channel | ||
Vishay |
SUD50P10-43L-GE3 | RF Bipolar Transistors MOSFET 100V 37A P-Channel | |
| SUD50P10-43L-E3 | MOSFET P-CH 100V 37.1A TO252 | ||
| SUD50P10-43L | 全新原裝 |