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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| RF1S50N06SM9A DISTI # 512-RF1S50N06SM9A | ON Semiconductor | MOSFET RoHS: Not compliant | 0 | |
| RF1S50N06SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 9898 |
|
| RF1S50N06 | Harris Semiconductor | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 2746 |
|
| RF1S50N06LE | Harris Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Not Compliant | 4042 |
|
| RF1S50N06LESM | Harris Semiconductor | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 1705 |
|
| RF1S50N06SM9AS2551 | Harris Semiconductor | RoHS: Not Compliant | 653 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: RF1S15N08LSM OMO.#: OMO-RF1S15N08LSM-1190 |
全新原裝 |
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Mfr.#: RF1S23N06LE OMO.#: OMO-RF1S23N06LE-1190 |
Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S25N06 OMO.#: OMO-RF1S25N06-1190 |
- Bulk (Alt: RF1S25N06) |
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Mfr.#: RF1S40N10LE OMO.#: OMO-RF1S40N10LE-1190 |
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S40N10LESM9AR4363 |
全新原裝 |
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Mfr.#: RF1S4N100SM9A OMO.#: OMO-RF1S4N100SM9A-1190 |
Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S50N06LSM OMO.#: OMO-RF1S50N06LSM-1190 |
全新原裝 |
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Mfr.#: RF1S530SM9A OMO.#: OMO-RF1S530SM9A-1190 |
Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: RF1S60P03 OMO.#: OMO-RF1S60P03-1190 |
全新原裝 |
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Mfr.#: RF1S70N06DPAK OMO.#: OMO-RF1S70N06DPAK-1190 |
全新原裝 |
