HGTG12N60C3D

Mfr. #:: HGTG12N60C3D
製造商:: ON Semiconductor
描述:: IGBT Transistors 24a 600V IGBT UFS N-Channel
生命週期:: 製造商新產品
數據表:: HGTG12N60C3D 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 仙童半導體

產品分類: IGBT - 單

系列: -

打包: 管子

部分別名: HGTG12N60C3D_NL

單位重量: 0.225401 oz

安裝方式: 通孔

包裝盒: TO-247-3

輸入類型: 標準

安裝型: 通孔

供應商-設備-包: TO-247

配置: 單身的

最大功率: 104W

反向恢復時間trr: 42ns

電流收集器 Ic-Max: 24A

電壓收集器發射極擊穿最大值: 600V

IGBT型: -

電流收集器脈衝Icm: 96A

Vce-on-Max-Vge-Ic: 2.2V @ 15V, 15A

開關能源: 380μJ (on), 900μJ (off)

柵極電荷: 48nC

Td-on-off-25°C: -

測試條件: -

鈀功耗: 104 W

最高工作溫度: + 150 C

最低工作溫度: - 40 C

集電極-發射極-電壓-VCEO-Max: 600 V

集電極-發射極-飽和-電壓: 1.65 V

25-C 時的連續集電極電流: 24 A

柵極-發射極-漏電流: +/- 100 nA

最大柵極發射極電壓: +/- 20 V

連續集電極電流 Ic-Max: 24 A

Tags: HGTG12N, HGTG12, HGTG1, HGTG, HGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG12N60C3D 描述

***Semiconductor: 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

***ical: Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Rail

***p One Stop Global: Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail

***inecomponents.com: 600V,24A,UFS,SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE

***et: UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIOD

***ser: IGBTs 24a, 600V, IGBT UFS N-Channel

***o-Tech: Transistor IGBT N-Ch 600V 24A TO247

***th Star Micro: IGBT UFS N-CHAN 600V 24A TO-247

***nell: IGBT, N, 3-TO-247; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:24A; Voltage, Vce Sat Max:2V; Power Dissipation:104W; Case Style:TO-247; Termination Type:Through Hole

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:24A; Collector Emitter Saturation Voltage, Vce(sat):1.65V; Power Dissipation, Pd:104W; Package/Case:3-TO-247; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes

***ment14 APAC: IGBT, N, 3-TO-247; Transistor Type:IGBT; DC Collector Current:24A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:104W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:24A; Package / Case:TO-247; Power Dissipation Max:104W; Power Dissipation Pd:104W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***rchild Semiconductor: The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage dorp varies only moderately 25°C and 150°C. The IBGT used is the development type TA49123. The diode in anti parallel with the IGBT is the development type TA49061.The IGBT is ideal for mant high voltage switching applications operating at moderate frquencies where low conduction losses are essential.Formerly Developmental Type TA49117.

Market price

型號	製造商	描述	庫存	價格
HGTG12N60C3D DISTI # V79:2366_17784181	ON Semiconductor	PTPIGBT TO247 24A 600V	17	2500:$3.1600 1000:$3.3260 500:$3.9380 250:$4.3830 100:$4.6150 10:$5.3060 1:$6.8332
HGTG12N60C3D DISTI # V36:1790_06359200	ON Semiconductor	PTPIGBT TO247 24A 600V	0
HGTG12N60C3D DISTI # HGTG12N60C3D-ND	ON Semiconductor	IGBT 600V 24A 104W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	10In Stock	1350:$3.5349 900:$4.1914 450:$4.6711 10:$6.0090 1:$6.6900
HGTG12N60C3D DISTI # 32314369	ON Semiconductor	PTPIGBT TO247 24A 600V	1674	900:$4.3560 9:$4.8510
HGTG12N60C3D DISTI # 30249921	ON Semiconductor	PTPIGBT TO247 24A 600V	17	2500:$3.3970 1000:$3.5755 500:$4.2333 250:$4.7117 100:$4.9611 10:$5.7039 5:$6.6779
HGTG12N60C3D DISTI # HGTG12N60C3D	ON Semiconductor	Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG12N60C3D) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€2.3900 500:€2.5900 100:€2.6900 50:€2.7900 25:€2.8900 10:€2.9900 1:€3.2900
HGTG12N60C3D DISTI # HGTG12N60C3D	ON Semiconductor	Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG12N60C3D) RoHS: Compliant Min Qty: 72 Container: Bulk	Americas - 0	720:$4.2900 216:$4.3900 360:$4.3900 72:$4.4900 144:$4.4900
HGTG12N60C3D DISTI # HGTG12N60C3D	ON Semiconductor	Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG12N60C3D) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	4500:$3.7900 2700:$3.8900 900:$3.9900 1800:$3.9900 450:$4.0900
HGTG12N60C3D DISTI # 58K1586	ON Semiconductor	Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1586) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$4.6900
HGTG12N60C3D DISTI # 58K1586	ON Semiconductor	SINGLE IGBT, 600V, 24A,DC Collector Current:24A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:104W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	0	500:$4.0300 250:$4.4900 100:$4.7400 50:$4.9800 25:$5.2200 10:$5.4600 1:$6.4200
HGTG12N60C3D DISTI # 512-HGTG12N60C3D	ON Semiconductor	IGBT Transistors 24a 600V IGBT UFS N-Channel RoHS: Compliant	110	1:$6.3600 10:$5.4100 100:$4.6900 250:$4.4500 500:$3.9900 1000:$3.3600 2500:$3.1900
HGTG12N60C3D	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	213	1000:$4.5900 500:$4.8300 100:$5.0300 25:$5.2500 1:$5.6500
HGTG12N60C3D	Harris Semiconductor	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	6698	1000:$4.5900 500:$4.8300 100:$5.0300 25:$5.2500 1:$5.6500
HGTG12N60C3DR	Harris Semiconductor	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel RoHS: Not Compliant	659	1000:$2.0400 500:$2.1500 100:$2.2400 25:$2.3300 1:$2.5100
HGTG12N60C3D DISTI # HGTG12N60C3D	ON Semiconductor	Transistor: IGBT,600V,12A,104W,TO247-3	133	1:$2.1800 3:$1.8800 10:$1.7400 30:$1.5600 150:$1.4600
HGTG12N60C3D DISTI # 1467936	ON Semiconductor	IGBT, N, 3-TO-247 RoHS: Compliant	0	2500:$4.9100 1000:$5.1700 500:$6.1400 250:$6.8500 100:$7.2200 10:$8.3200 1:$9.7800

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