IGP30N65F5XKSA1

Mfr. #:: IGP30N65F5XKSA1
製造商:: Infineon Technologies
描述:: IGBT TRENCH 650V 55A TO220-3
生命週期:: 製造商新產品
數據表:: IGP30N65F5XKSA1 數據表
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更多信息:: IGP30N65F5XKSA1 更多信息

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Tags: IGP30N65, IGP30N, IGP30, IGP3, IGP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGP30N65F5XKSA1 描述

***ical: Trans IGBT Chip N-CH 650V 55A 188000mW 3-Pin(3+Tab) TO-220 Tube

***p One Stop Japan: 650V IGBT High Speed Switching Series

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

IGP30N65F5XKSA1 更多信息

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 F5 Discrete IGBTs: Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.

Market price

型號	製造商	描述	庫存	價格
IGP30N65F5XKSA1 DISTI # V99:2348_06378486	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 55A Tube RoHS: Compliant	485	2500:$1.2810 1000:$1.2850 500:$1.5680 100:$1.8160 10:$2.2830 1:$2.9788
IGP30N65F5XKSA1 DISTI # IGP30N65F5XKSA1-ND	Infineon Technologies AG	IGBT TRENCH 650V 55A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$1.7083
IGP30N65F5XKSA1 DISTI # 26197442	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 55A Tube RoHS: Compliant	485	2500:$1.2810 1000:$1.2850 500:$1.5680 100:$1.8160 10:$2.2830 5:$2.9788
IGP30N65F5XKSA1 DISTI # IGP30N65F5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 30A 3-Pin TO-220 Tube - Rail/Tube (Alt: IGP30N65F5XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$1.0900 1000:$1.1900 2000:$1.1900 3000:$1.1900 500:$1.2900
IGP30N65F5XKSA1 DISTI # SP001133080	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 30A 3-Pin TO-220 Tube (Alt: SP001133080) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.0799 500:€1.0999 100:€1.1169 50:€1.1369 25:€1.2179 10:€1.4649 1:€1.8819
IGP30N65F5 DISTI # 726-IGP30N65F5	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS TrenchStop 5 RoHS: Compliant	207	1:$2.7300 10:$2.3200 100:$1.8600 500:$1.6200 1000:$1.3400 2500:$1.2500 5000:$1.2000
IGP30N65F5XKSA1 DISTI # 726-IGP30N65F5XKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS TrenchStop 5 RoHS: Compliant	465	1:$2.7300 10:$2.3200 100:$1.8600 500:$1.6200 1000:$1.3400 2500:$1.2500 5000:$1.2000
IGP30N65F5XKSA1 DISTI # IGP30N65F5	Infineon Technologies AG	650V 55A 188W TO220 RoHS: Compliant	498	1:€1.7800 10:€1.3800 50:€1.1800 100:€1.0800

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