IGP30N65F5

Mfr. #:: IGP30N65F5
製造商:: Infineon Technologies
描述:: IGBT Transistors IGBT PRODUCTS TrenchStop 5
生命週期:: 製造商新產品
數據表:: IGP30N65F5 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: IGP30N65F5 更多信息

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: IGBT - 單

打包: 管子

部分別名: IGP30N65F5XKSA1 SP001133080

單位重量: 0.211644 oz

安裝方式: 通孔

包裝盒: TO-220-3

配置: 單身的

鈀功耗: 188 W

最高工作溫度: + 175 C

最低工作溫度: - 40 C

集電極-發射極-電壓-VCEO-Max: 650 V

集電極-發射極-飽和-電壓: 1.6 V

25-C 時的連續集電極電流: 55 A

柵極-發射極-漏電流: 100 nA

最大柵極發射極電壓: 20 V

Tags: IGP30N65, IGP30N, IGP30, IGP3, IGP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGP30N65F5 更多信息

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 F5 Discrete IGBTs: Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.

Market price

型號	製造商	描述	庫存	價格
IGP30N65F5XKSA1 DISTI # IGP30N65F5XKSA1-ND	Infineon Technologies AG	IGBT TRENCH 650V 55A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$1.7083
IGP30N65F5XKSA1 DISTI # IGP30N65F5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 30A 3-Pin TO-220 Tube - Rail/Tube (Alt: IGP30N65F5XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$1.2900 1000:$1.1900 2000:$1.1900 3000:$1.1900 5000:$1.0900
IGP30N65F5XKSA1 DISTI # SP001133080	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 30A 3-Pin TO-220 Tube (Alt: SP001133080) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0
IGP30N65F5 DISTI # 726-IGP30N65F5	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS TrenchStop 5 RoHS: Compliant	216	1:$2.7300 10:$2.3200 100:$1.8600 500:$1.6200 1000:$1.3400 2500:$1.2500 5000:$1.2000
IGP30N65F5XKSA1 DISTI # 726-IGP30N65F5XKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS TrenchStop 5 RoHS: Compliant	465	1:$2.7300 10:$2.3200 100:$1.8600 500:$1.6200 1000:$1.3400 2500:$1.2500 5000:$1.2000
IGP30N65F5XKSA1 DISTI # IGP30N65F5	Infineon Technologies AG	650V 55A 188W TO220 RoHS: Compliant	498	1:€1.8200 10:€1.4200 50:€1.2200 100:€1.1200

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