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IPD60R280P7ATMA1

IPD60R280P7ATMA1
Mfr. #:
IPD60R280P7ATMA1
製造商:
Infineon Technologies
描述:
MOSFET LOW POWER_NEW
生命週期:
製造商新產品
數據表:
IPD60R280P7ATMA1 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
IPD60R280P7ATMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-252-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
12 A
Rds On - 漏源電阻：
214 mOhms
Vgs th - 柵源閾值電壓：
3 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
18 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
53 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
捲軸
系列：
CoolMOS P7
晶體管類型：
1 N-Channel
品牌：
英飛凌科技
秋季時間：
9 ns
產品類別：
MOSFET
上升時間：
9 ns
出廠包裝數量：
2500
子類別：
MOSFET
典型關斷延遲時間：
60 ns
典型的開啟延遲時間：
17 ns
第 # 部分別名：
IPD60R280P7 SP001658316
單位重量：
0.011993 oz
Tags
IPD60R280P, IPD60R28, IPD60R2, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 280 mOhm 18 nC CoolMOS™ Power Mosfet - DPAK
***i-Key
MOSFET N-CH 600V 12A TO252-3
***ronik
N-CH 600V 12A 280mOhm TO252-3
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 600V, 12A, 53W, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.214Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 12A, 53W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.214ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:53W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 600V, 12A, 53W, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.214ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:53W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
型號 製造商 描述 庫存 價格
IPD60R280P7ATMA1
DISTI # V36:1790_18205319		Infineon Technologies AG600V CoolMOS P7 Power Transistor0
  • 2500000:$0.6905
  • 1250000:$0.6909
  • 250000:$0.7365
  • 25000:$0.8251
  • 2500:$0.8403
IPD60R280P7ATMA1
DISTI # IPD60R280P7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 600V 12A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2521In Stock
  • 1000:$0.9296
  • 500:$1.1219
  • 100:$1.3656
  • 10:$1.6990
  • 1:$1.8900
IPD60R280P7ATMA1
DISTI # IPD60R280P7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 600V 12A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2521In Stock
  • 1000:$0.9296
  • 500:$1.1219
  • 100:$1.3656
  • 10:$1.6990
  • 1:$1.8900
IPD60R280P7ATMA1
DISTI # IPD60R280P7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 12A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 12500:$0.7884
  • 5000:$0.8092
  • 2500:$0.8403
IPD60R280P7ATMA1
DISTI # SP001658316		Infineon Technologies AGLOW POWER_NEW (Alt: SP001658316)
RoHS: Compliant
Min Qty: 2500		Europe - 2500
  • 25000:€0.7619
  • 15000:€0.8139
  • 10000:€0.9339
  • 5000:€1.1189
  • 2500:€1.3339
IPD60R280P7ATMA1
DISTI # IPD60R280P7ATMA1		Infineon Technologies AGLOW POWER_NEW - Tape and Reel (Alt: IPD60R280P7ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.7529
  • 15000:$0.7659
  • 10000:$0.7929
  • 5000:$0.8229
  • 2500:$0.8539
IPD60R280P7ATMA1
DISTI # 93AC7115		Infineon Technologies AGMOSFET, N-CH, 600V, 12A, 53W, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.214ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2500
  • 1000:$0.8690
  • 500:$1.0400
  • 250:$1.1200
  • 100:$1.1900
  • 50:$1.2900
  • 25:$1.3900
  • 10:$1.4900
  • 1:$1.7600
IPD60R280P7ATMA1
DISTI # 726-IPD60R280P7ATMA1		Infineon Technologies AGMOSFET LOW POWER_NEW
RoHS: Compliant		3152
  • 1:$1.7400
  • 10:$1.4800
  • 100:$1.1800
  • 500:$1.0300
  • 1000:$0.8600
  • 2500:$0.8010
  • 5000:$0.7710
  • 10000:$0.7410
IPD60R280P7ATMA1
DISTI # IPD60R280P7		Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,8A,53W,PG-TO252-31907
  • 500:$0.9600
  • 100:$1.0400
  • 25:$1.1500
  • 5:$1.3000
  • 1:$1.4400
IPD60R280P7ATMA1
DISTI # XSKDRABV0021236		Infineon Technologies AG 
RoHS: Compliant		7500 in Stock0 on Order
  • 7500:$1.0400
  • 2500:$1.1100
IPD60R280P7ATMA1
DISTI # 2986467		Infineon Technologies AGMOSFET, N-CH, 600V, 12A, 53W, TO-252
RoHS: Compliant		2500
  • 1000:$1.1900
  • 500:$1.3300
  • 250:$1.4500
  • 100:$1.5500
  • 25:$1.8900
  • 5:$2.1100
IPD60R280P7ATMA1
DISTI # 2986467		Infineon Technologies AGMOSFET, N-CH, 600V, 12A, 53W, TO-2522500
  • 500:£0.7460
  • 250:£0.8010
  • 100:£0.8550
  • 10:£1.1100
  • 1:£1.4300
圖片 型號 描述
NCP51530BDR2G

Mfr.#: NCP51530BDR2G

OMO.#: OMO-NCP51530BDR2G

 Gate Drivers 700V HALF BRIDGE DRIVER
BZX84C15VLFHT116

Mfr.#: BZX84C15VLFHT116

OMO.#: OMO-BZX84C15VLFHT116

 Zener Diodes 13.8-15.6V 250mW SOT-23 5mA
RFN2LAM6STFTR

Mfr.#: RFN2LAM6STFTR

OMO.#: OMO-RFN2LAM6STFTR

 Diodes - General Purpose, Power, Switching 600V VR 1.5A IO SOD-128; PMDTM
IPD60R180P7SAUMA1

Mfr.#: IPD60R180P7SAUMA1

OMO.#: OMO-IPD60R180P7SAUMA1

 MOSFET CONSUMER
IPD60R360P7ATMA1

Mfr.#: IPD60R360P7ATMA1

OMO.#: OMO-IPD60R360P7ATMA1

 MOSFET
SN74LVC1G14DBVR

Mfr.#: SN74LVC1G14DBVR

OMO.#: OMO-SN74LVC1G14DBVR

 Inverters SINGLE SCHMITT TRIGGER INVERTER
UCC28780DR

Mfr.#: UCC28780DR

OMO.#: OMO-UCC28780DR

 Switching Controllers ACTIVE CLAMP FLYBACK
TFS761HG

Mfr.#: TFS761HG

OMO.#: OMO-TFS761HG

 Switching Controllers 2 Swt Fwd,Flybk Cntr 326 W Cont. @ 25 C
KTR03EZPF3004

Mfr.#: KTR03EZPF3004

OMO.#: OMO-KTR03EZPF3004

 Thick Film Resistors - SMD 0603 3Mohm 1% High VoltageAEC-Q200
RFN2LAM6STFTR

Mfr.#: RFN2LAM6STFTR

OMO.#: OMO-RFN2LAM6STFTR-ROHM-SEMI

 SUPER FAST RECOVERY DIODE AEC-Q1
可用性
庫存:
Available
訂購:
1986
輸入數量:
IPD60R280P7ATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.74
US$1.74
10
US$1.48
US$14.80
100
US$1.18
US$118.00
500
US$1.03
US$515.00
1000
US$0.86
US$860.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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