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IPD60R360P7ATMA1

IPD60R360P7ATMA1
Mfr. #:
IPD60R360P7ATMA1
製造商:
Infineon Technologies
描述:
MOSFET
生命週期:
製造商新產品
數據表:
IPD60R360P7ATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IPD60R360P7ATMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-252-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
9 A
Rds On - 漏源電阻：
305 mOhms
Vgs th - 柵源閾值電壓：
3 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
13 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
41 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
捲軸
系列：
CoolMOS P7
晶體管類型：
1 N-Channel
品牌：
英飛凌科技
秋季時間：
10 ns
產品類別：
MOSFET
上升時間：
7 ns
出廠包裝數量：
2500
子類別：
MOSFET
典型關斷延遲時間：
42 ns
典型的開啟延遲時間：
8 ns
第 # 部分別名：
IPD60R360P7 SP001606048
單位重量：
0.011993 oz
Tags
IPD60R360P7, IPD60R360P, IPD60R36, IPD60R3, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 360 mOhm 13 nC CoolMOS™ Power Mosfet - DPAK
***ark
Mosfet, N-Ch, 600V, 9A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.305Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes |Infineon IPD60R360P7ATMA1
*** Stop Electro
Power Field-Effect Transistor, 9A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
型號 製造商 描述 庫存 價格
IPD60R360P7ATMA1
DISTI # V72:2272_17072161		Infineon Technologies AGTrans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R2490
  • 1000:$0.6776
  • 500:$0.8240
  • 250:$0.9411
  • 100:$0.9792
  • 25:$1.2466
  • 10:$1.2701
  • 1:$1.6336
IPD60R360P7ATMA1
DISTI # V36:1790_17072161		Infineon Technologies AGTrans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R0
    IPD60R360P7ATMA1
    DISTI # IPD60R360P7ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 9A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2305In Stock
    • 1000:$0.7423
    • 500:$0.9403
    • 100:$1.1383
    • 10:$1.4600
    • 1:$1.6300
    IPD60R360P7ATMA1
    DISTI # IPD60R360P7ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 9A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2305In Stock
    • 1000:$0.7423
    • 500:$0.9403
    • 100:$1.1383
    • 10:$1.4600
    • 1:$1.6300
    IPD60R360P7ATMA1
    DISTI # IPD60R360P7ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 650V 9A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 5000:$0.6406
    • 2500:$0.6727
    IPD60R360P7ATMA1
    DISTI # 31970613    		Infineon Technologies AGTrans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R2490
    • 1000:$0.6776
    • 500:$0.8240
    • 250:$0.9411
    • 100:$0.9792
    • 25:$1.2466
    • 11:$1.2701
    IPD60R360P7ATMA1
    DISTI # IPD60R360P7ATMA1    		Infineon Technologies AGLOW POWER_NEW - Tape and Reel (Alt: IPD60R360P7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.5809
    • 15000:$0.5909
    • 10000:$0.6119
    • 5000:$0.6349
    • 2500:$0.6589
    IPD60R360P7ATMA1
    DISTI # 34AC1679    		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.305ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes74
    • 1000:$0.7400
    • 500:$0.9100
    • 250:$0.9630
    • 100:$1.0200
    • 50:$1.1100
    • 25:$1.2100
    • 10:$1.3000
    • 1:$1.5000
    IPD60R360P7ATMA1
    DISTI # 726-IPD60R360P7ATMA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		21457
    • 1:$1.5000
    • 10:$1.2800
    • 100:$0.9840
    • 500:$0.8700
    • 1000:$0.6870
    IPD60R360P7ATMA1
    DISTI # 2784038    		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, TO-252
    RoHS: Compliant    		74
    • 5000:$0.9380
    • 1000:$0.9830
    • 500:$1.0400
    • 250:$1.2100
    • 100:$1.4300
    • 25:$1.7500
    • 5:$2.0100
    IPD60R360P7ATMA1
    DISTI # 2784038    		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, TO-2522169
    • 500:£0.6840
    • 250:£0.7290
    • 100:£0.7740
    • 25:£1.0100
    • 5:£1.1100
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    可用性
    庫存:
    20
    訂購:
    2003
    輸入數量:
    IPD60R360P7ATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$1.50
    US$1.50
    10
    US$1.28
    US$12.80
    100
    US$0.98
    US$98.40
    500
    US$0.87
    US$435.00
    1000
    US$0.69
    US$687.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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