FDB035N10A

FDB035N10A
Mfr. #:
FDB035N10A
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 100V N-Channel PowerTrench MOSFET
生命週期:
製造商新產品
數據表:
FDB035N10A 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
FDB035N10A 更多信息
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
TO-263-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
100 V
Id - 連續漏極電流:
214 A
Rds On - 漏源電阻:
3 mOhms
Vgs th - 柵源閾值電壓:
4 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
89 nC
Pd - 功耗:
333 W
配置:
單身的
商品名:
動力戰壕
打包:
捲軸
高度:
4.83 mm
長度:
10.67 mm
系列:
FDB035N10A
晶體管類型:
1 N-Channel
寬度:
9.65 mm
品牌:
安森美半導體/飛兆半導體
正向跨導 - 最小值:
167 S
秋季時間:
11 ns
產品類別:
MOSFET
上升時間:
54 ns
出廠包裝數量:
800
子類別:
MOSFET
單位重量:
0.046296 oz
Tags
FDB035, FDB03, FDB0, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
***Yang
Trans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ
***ment14 APAC
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ical
Trans MOSFET N-CH 75V 260A Automotive 7-Pin(6+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***el Electronic
Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
***(Formerly Allied Electronics)
IRFS3107PBF N-channel MOSFET Transistor; 230 A; 75 V; 3-Pin D2PAK
***roFlash
Single N-Channel 75 V 3 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 75V 230A 3-Pin(2+Tab) D2PAK Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 370 W
***nell
MOSFET, N-CH, 75V, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 230A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.35V; Power D
***ure Electronics
N-Channel 75 V 3.1 mOhm Surface Mount PowerTrench® Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 75V, 235A, 3.1mΩ
***Yang
Trans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ment14 APAC
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Source Voltage Vds:75V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 235A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
型號 製造商 描述 庫存 價格
FDB035N10A
DISTI # V36:1790_06338016
ON SemiconductorULTRAFET0
  • 800000:$2.1070
  • 400000:$2.1100
  • 80000:$2.2850
  • 8000:$2.5810
  • 800:$2.6300
FDB035N10A
DISTI # V72:2272_06338016
ON SemiconductorULTRAFET0
    FDB035N10A
    DISTI # FDB035N10ACT-ND
    ON SemiconductorMOSFET N-CH 100V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    519In Stock
    • 100:$3.7961
    • 10:$4.6330
    • 1:$5.1600
    FDB035N10A
    DISTI # FDB035N10ADKR-ND
    ON SemiconductorMOSFET N-CH 100V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    519In Stock
    • 100:$3.7961
    • 10:$4.6330
    • 1:$5.1600
    FDB035N10A
    DISTI # FDB035N10ATR-ND
    ON SemiconductorMOSFET N-CH 100V 120A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)
    On Order
    • 2400:$2.5137
    • 1600:$2.6460
    • 800:$3.1374
    FDB035N10A
    DISTI # FDB035N10A
    ON SemiconductorTrans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB035N10A)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel
    Asia - 0
    • 40000:$2.9508
    • 20000:$3.0000
    • 8000:$3.1035
    • 4000:$3.2143
    • 2400:$3.3333
    • 1600:$3.4615
    • 800:$3.6000
    FDB035N10A
    DISTI # FDB035N10A
    ON SemiconductorTrans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB035N10A)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel
    Americas - 0
    • 8000:$2.2222
    • 4800:$2.2785
    • 3200:$2.3077
    • 1600:$2.3377
    • 800:$2.3529
    FDB035N10A
    DISTI # FDB035N10A
    ON SemiconductorTrans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB035N10A)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel
    Europe - 0
    • 8000:€1.9900
    • 4800:€2.1900
    • 3200:€2.3900
    • 1600:€2.4900
    • 800:€2.5900
    FDB035N10A
    DISTI # 07AH3889
    ON SemiconductorMOSFET, N-CH, 214A, 100V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:214A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.003ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
    • 500:$3.0100
    • 250:$3.3600
    • 100:$3.5500
    • 50:$3.7300
    • 25:$3.9100
    • 10:$4.0900
    • 1:$4.8100
    FDB035N10A
    DISTI # 54T8309
    ON SemiconductorN CHANNEL MOSFET, POWERTRENCH, 100V, 120A, D2PAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.003ohm,Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes0
    • 4800:$2.4200
    • 3200:$2.5100
    • 1600:$2.5500
    • 800:$2.5900
    • 1:$2.6300
    FDB035N10A.
    DISTI # 25AC9517
    Fairchild Semiconductor CorporationFET 100V 3.5 MOHM D2PAK ROHS COMPLIANT: YES0
    • 8000:$2.2300
    • 4800:$2.2800
    • 3200:$2.3100
    • 1600:$2.3400
    • 1:$2.3600
    FDB035N10A
    DISTI # 512-FDB035N10A
    ON SemiconductorMOSFET 100V N-Channel PowerTrench MOSFET
    RoHS: Compliant
    226
    • 1:$4.7600
    • 10:$4.0500
    • 100:$3.5100
    • 250:$3.3300
    • 500:$2.9800
    FDB035N10A
    DISTI # 8023200P
    ON SemiconductorMOSFETFAIRCHILDFDB035N10A, RL3092
    • 400:£2.5050
    • 200:£2.9250
    • 40:£3.3400
    • 8:£3.7600
    FDB035N10A
    DISTI # 8023200
    ON SemiconductorMOSFETFAIRCHILDFDB035N10A, PK46
    • 400:£2.5050
    • 200:£2.9250
    • 40:£3.3400
    • 8:£3.7600
    • 2:£4.1800
    FDB035N10A
    DISTI # 3004018
    ON SemiconductorMOSFET, N-CH, 214A, 100V, TO-263800
    • 500:£2.2300
    • 250:£2.4900
    • 100:£2.6200
    • 10:£3.0300
    • 1:£3.9600
    FDB035N10A
    DISTI # 3004018
    ON SemiconductorMOSFET, N-CH, 214A, 100V, TO-263
    RoHS: Compliant
    0
    • 1000:$3.4400
    • 500:$3.7300
    • 250:$4.0600
    • 100:$4.4700
    • 10:$4.9700
    • 1:$5.5800
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    Mfr.#: LTM4633EY#PBF

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    ACPL-C87B-000E

    Mfr.#: ACPL-C87B-000E

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    CRCW060324K9FKEAC

    Mfr.#: CRCW060324K9FKEAC

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    Thick Film Resistors - SMD 1/10W 24.9Kohms 1% Commercial Use
    ACPL-C87B-000E

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    OMO.#: OMO-ACPL-C87B-000E-BROADCOM

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    可用性
    庫存:
    166
    訂購:
    2149
    輸入數量:
    FDB035N10A的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$4.76
    US$4.76
    10
    US$4.05
    US$40.50
    100
    US$3.51
    US$351.00
    250
    US$3.33
    US$832.50
    500
    US$2.98
    US$1 490.00
    由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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