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IPB036N12N3 G

IPB036N12N3 G
Mfr. #:
IPB036N12N3 G
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
生命週期:
製造商新產品
數據表:
IPB036N12N3 G 數據表
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ECAD Model:
更多信息:
IPB036N12N3 G 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-7
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
120 V
Id - 連續漏極電流：
180 A
Rds On - 漏源電阻：
2.9 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
211 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
300 W
配置：
單身的
頻道模式：
增強
商品名：
優化MOS
打包：
捲軸
高度：
4.4 mm
長度：
10 mm
系列：
OptiMOS 3
晶體管類型：
1 N-Channel
寬度：
9.25 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
98 S
秋季時間：
21 ns
產品類別：
MOSFET
上升時間：
52 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
76 ns
典型的開啟延遲時間：
35 ns
第 # 部分別名：
IPB036N12N3GATMA1 IPB36N12N3GXT SP000675204
單位重量：
0.056438 oz
Tags
IPB036N12N3G, IPB036N12N3, IPB036, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型號 製造商 描述 庫存 價格
IPB036N12N3GATMA1
DISTI # V72:2272_06378504		Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		980
  • 500:$3.7270
  • 250:$4.1280
  • 100:$4.3500
  • 25:$4.9429
  • 10:$4.9980
  • 1:$5.7480
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 120V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		764In Stock
  • 500:$4.3574
  • 100:$5.2007
  • 10:$6.3250
  • 1:$7.0300
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 120V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		764In Stock
  • 500:$4.3574
  • 100:$5.2007
  • 10:$6.3250
  • 1:$7.0300
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 120V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$3.8211
IPB036N12N3 G
DISTI # 30580651		Infineon Technologies AGTrans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263
RoHS: Compliant		1852
  • 100:$4.5645
  • 50:$5.5717
  • 10:$5.6227
  • 4:$6.4132
IPB036N12N3GATMA1
DISTI # 31308714		Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		980
  • 500:$3.7210
  • 250:$4.1200
  • 100:$4.3420
  • 25:$4.9330
  • 10:$4.9879
  • 2:$5.7370
IPB036N12N3 G
DISTI # 30578830		Infineon Technologies AGTrans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263
RoHS: Compliant		956
  • 4:$7.1250
IPB036N12N3 G
DISTI # IPB036N12N3 G		Infineon Technologies AGTrans MOSFET N-CH 120V 180A 7-Pin TO-263 T/R (Alt: IPB036N12N3 G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 3000
  • 1000:$4.1353
  • 2000:$4.0019
  • 3000:$3.8769
  • 5000:$3.7594
  • 10000:$3.7033
  • 25000:$3.6488
  • 50000:$3.5959
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB036N12N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.4900
  • 2000:$3.3900
  • 4000:$3.2900
  • 6000:$3.1900
  • 10000:$3.0900
IPB036N12N3GATMA1
DISTI # 47W3463		Infineon Technologies AGMOSFET, N CHANNEL, 120V, 180A, TO263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0029ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes1169
  • 1:$6.5700
  • 10:$5.5900
  • 25:$5.3400
  • 50:$5.0900
  • 100:$4.8400
  • 250:$4.6000
  • 500:$4.1200
IPB036N12N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 180A I(D), 120V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
RoHS: Compliant		2185
  • 1000:$2.6800
  • 500:$2.8300
  • 100:$2.9400
  • 25:$3.0700
  • 1:$3.3000
IPB036N12N3 G
DISTI # 726-IPB036N12N3GXT		Infineon Technologies AGMOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant		1746
  • 1:$6.5700
  • 10:$5.5900
  • 100:$4.8400
  • 250:$4.6000
  • 500:$4.1200
  • 1000:$3.4800
IPB036N12N3GATMA1
DISTI # 726-IPB036N12N3GATMA		Infineon Technologies AGMOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant		311
  • 1:$6.5700
  • 10:$5.5900
  • 100:$4.8400
  • 250:$4.6000
  • 500:$4.1200
  • 1000:$3.4800
IPB036N12N3GATMA1
DISTI # 7545428		Infineon Technologies AGMOSFET N-CH 120V 180A OPTIMOS3 TO263, EA379
  • 1:£4.8500
  • 10:£3.8400
  • 50:£3.5100
  • 250:£3.1700
  • 500:£2.8300
IPB036N12N3GATMA1
DISTI # 7545428P		Infineon Technologies AGMOSFET N-CH 120V 180A OPTIMOS3 TO263, RL1451
  • 10:£3.8400
  • 50:£3.5100
  • 250:£3.1700
  • 500:£2.8300
IPB036N12N3GInfineon Technologies AG 569
    IPB036N12N3 GInfineon Technologies AG 376
      IPB036N12N3 GInfineon Technologies AGINSTOCK105
        IPB036N12N3-GInfineon Technologies AGINSTOCK105
          IPB036N12N3GATMA1
          DISTI # 2212819          		Infineon Technologies AGMOSFET, N-CH, 120V, 180A, TO263-7
          RoHS: Compliant          		1652
          • 1:£4.6100
          • 10:£3.9200
          • 100:£3.3900
          • 250:£3.2100
          • 500:£2.8900
          IPB036N12N3 G
          DISTI # C1S322000133246          		Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
          RoHS: Compliant          		956
          • 100:$4.1500
          • 50:$5.0700
          • 10:$5.1200
          • 1:$5.7000
          IPB036N12N3 G
          DISTI # C1S322000438099          		Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
          RoHS: Compliant          		1852
          • 100:$3.5800
          • 50:$4.3700
          • 10:$4.4100
          • 1:$5.0300
          IPB036N12N3GATMA1
          DISTI # C1S322000643035          		Infineon Technologies AGMOSFETs
          RoHS: Compliant          		980
          • 250:$4.1200
          • 100:$4.3420
          • 25:$4.9330
          • 10:$4.9879
          • 1:$5.7370
          IPB036N12N3GATMA1
          DISTI # 2212819          		Infineon Technologies AGMOSFET, N-CH, 120V, 180A, TO263-7
          RoHS: Compliant          		1169
          • 1:$10.4000
          • 10:$8.8500
          • 100:$7.6600
          • 250:$7.2800
          • 500:$6.5300
          • 1000:$5.5100
          IPB036N12N3 GInfineon Technologies AGRoHS(ship within 1day)300
          • 1:$6.7700
          • 10:$5.7700
          • 50:$5.0000
          • 100:$4.7700
          • 500:$4.5800
          • 1000:$4.4800
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          Mfr.#: BQ78350DBTR-R1

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          可用性
          庫存:
          Available
          訂購:
          1985
          輸入數量:
          IPB036N12N3 G的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
          參考價格（美元）
          數量
          單價
          小計金額
          1
          US$6.56
          US$6.56
          10
          US$5.58
          US$55.80
          100
          US$4.83
          US$483.00
          250
          US$4.59
          US$1 147.50
          500
          US$4.11
          US$2 055.00
          由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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