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IRF6645TR1PBF

IRF6645TR1PBF
Mfr. #:
IRF6645TR1PBF
製造商:
Infineon / IR
描述:
MOSFET MOSFT 100V 25A 35mOhm 14nC Qg
生命週期:
製造商新產品
數據表:
IRF6645TR1PBF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6645TR1PBF DatasheetIRF6645TR1PBF Datasheet (P4-P6)IRF6645TR1PBF Datasheet (P7-P9)
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
DirectFET-SJ
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
5.7 A
Rds On - 漏源電阻：
28 mOhms
Vgs th - 柵源閾值電壓：
4.9 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
14 nC
最高工作溫度：
+ 150 C
Pd - 功耗：
42 W
配置：
單身的
打包：
捲軸
高度：
0.7 mm
長度：
4.85 mm
晶體管類型：
1 N-Channel
寬度：
3.95 mm
品牌：
英飛凌/紅外
正向跨導 - 最小值：
7.4 S
秋季時間：
5.1 ns
濕氣敏感：
是的
產品類別：
MOSFET
上升時間：
5 ns
出廠包裝數量：
1000
子類別：
MOSFET
第 # 部分別名：
SP001574778
單位重量：
0.017637 oz
Tags
IRF6645T, IRF6645, IRF664, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 28 Milliohms;ID 5.7A;SJ;PD 3W;VGS +/-20V
***ure Electronics
Single N-Channel 100 V 35 mOhm 14 nC HEXFET® Power Mosfet - DirectFET®
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:4.5A; On Resistance, Rds(on):35mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET SJ ;RoHS Compliant: Yes
***ernational Rectifier
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SJ package rated at 25 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***emi
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 26A, 34mΩ
*** Stop Electro
Power Field-Effect Transistor, 6A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N CH, 100V, 26A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ure Electronics
N-Channel 100 V 2.25 mOhm OptiMOS™2 Power-Transistor - PG-TDSON-8
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 40A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):19.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:78W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:78W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***icroelectronics
N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package
***ical
Trans MOSFET N-CH 100V 7A 8-Pin Power Flat EP T/R
***el Electronic
Power Management Specialized - PMIC PMUIC W/4 BUCK 12 LDO RG
***icroelectronics SCT
Power MOSFETs, 100V, 7A, PowerFLAT 3.3x3.3, Tape and Reel
***ment14 APAC
MOSFET, N-CH, 100V, 7A, 150DEG C, 50W;
***(Formerly Allied Electronics)
MOSFET; Power; N-Ch; VDSS 100V; RDS(ON) 22Milliohms; ID 6.9A; SO-8; PD 2.5W; VGS +/-20
***ure Electronics
IRF7473PbF Series N-Channel 100 V 26 mOhm 2.5 W HEXFET Power MOSFET - SOIC-8
***ical
Trans MOSFET N-CH 100V 6.9A 8-Pin SOIC Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Source Voltage Vds:100V; On Resistance Rds(on):0.026ohm;
***nell
MOSFET N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.9A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.9A; Fall Time tf: 11ns; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: (1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm: 55A; Rise Time: 20ns; Termination Type: Surface Mount Device; Voltage Vgs Max: 20V
*** Electronics
In a Pack of 5, FDD3860 N-Channel MOSFET, 29 A, 100 V PowerTrench, 3-Pin DPAK ON Semiconductor
***emi
PowerTrench® MOSFET, N-Channel, 100 V, 29 A, 36 mΩ
*** Stop Electro
Power Field-Effect Transistor, 6.2A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
Using Fairchild's proprietary high density trench MOSFET process, this part is tailored for low rDS(on) and low Qg figure of merit and with avalanche ruggedness for a wide range of switching applications.
型號 製造商 描述 庫存 價格
IRF6645TR1PBF
DISTI # IRF6645TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 100V 5.7A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6645TR1PBF
    DISTI # IRF6645TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 100V 5.7A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6645TR1PBF
      DISTI # IRF6645TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 100V 5.7A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6645TR1PBF
        DISTI # 70017396        		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 28 Milliohms,ID 5.7A,SJ,PD 3W,VGS +/-20V
        RoHS: Compliant        		0
        • 1000:$1.7300
        • 2000:$1.5800
        IRF6645TR1PBFInfineon Technologies AGSingle N-Channel 100 V 35 mOhm 14 nC HEXFET Power Mosfet - DirectFET
        RoHS: Compliant        		138Cut Tape/Mini-Reel
        • 1:$1.5500
        • 30:$1.4700
        • 300:$1.2000
        IRF6645TR1PBF
        DISTI # 942-IRF6645TR1PBF        		Infineon Technologies AGMOSFET MOSFT 100V 25A 35mOhm 14nC Qg
        RoHS: Compliant        		0
          IRF6645TR1PBFInternational Rectifier5.7 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET43
          • 8:$2.6250
          • 3:$3.5000
          • 1:$5.2500
          IRF6645TR1PBFInternational Rectifier 
          RoHS: Compliant          		1000
            IRF6645TR1PBF
            DISTI # 1436927            		Infineon Technologies AGMOSFET, N, DIRECTFET, 100V, SJ
            RoHS: Compliant            		0
            • 10000:$1.8700
            • 5000:$1.9700
            • 2000:$2.0400
            • 1000:$2.1900
            • 500:$2.4700
            • 100:$2.7700
            • 10:$3.4200
            • 1:$4.1500
            IRF6645TR1PBF
            DISTI # XSFP00000020622            		Infineon Technologies AG 
            RoHS: Compliant            		74 in Stock0 on Order
            • 74:$2.0700
            • 65:$2.2100
            圖片 型號 描述
            IRF6648TRPBF

            Mfr.#: IRF6648TRPBF

            OMO.#: OMO-IRF6648TRPBF

            		 MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC
            IRF6644TR1PBF

            Mfr.#: IRF6644TR1PBF

            OMO.#: OMO-IRF6644TR1PBF

            		 MOSFET MOSFT 100V 60A 13mOhm 35nC Qg
            IRF6644TRPBF

            Mfr.#: IRF6644TRPBF

            OMO.#: OMO-IRF6644TRPBF-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 100V 10.3A DIRECTFET
            IRF6645TR1PBF-CUT TAPE

            Mfr.#: IRF6645TR1PBF-CUT TAPE

            OMO.#: OMO-IRF6645TR1PBF-CUT-TAPE-1190

            		 全新原裝
            IRF6644

            Mfr.#: IRF6644

            OMO.#: OMO-IRF6644-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 100V DIRECTFET-MN
            IRF6645TR1PBF

            Mfr.#: IRF6645TR1PBF

            OMO.#: OMO-IRF6645TR1PBF-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 100V 5.7A DIRECTFET
            IRF6641PBF

            Mfr.#: IRF6641PBF

            OMO.#: OMO-IRF6641PBF-1190

            		 全新原裝
            IRF6645TR

            Mfr.#: IRF6645TR

            OMO.#: OMO-IRF6645TR-1190

            		 全新原裝
            IRF6648TR1PBF

            Mfr.#: IRF6648TR1PBF

            OMO.#: OMO-IRF6648TR1PBF-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 60V 86A DIRECTFET
            IRF6643TR1PBF

            Mfr.#: IRF6643TR1PBF

            OMO.#: OMO-IRF6643TR1PBF-INFINEON-TECHNOLOGIES

            		 IGBT Transistors MOSFET MOSFT 150V 35A 35mOhm 39nC Qg
            可用性
            庫存:
            Available
            訂購:
            3500
            輸入數量:
            IRF6645TR1PBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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