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FGA30S120P

FGA30S120P
Mfr. #:
FGA30S120P
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors Shorted AnodeTM IGBT
生命週期:
製造商新產品
數據表:
FGA30S120P 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
FGA30S120P 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-3PN
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
1300 V
集電極-發射極飽和電壓：
2.3 V
最大柵極發射極電壓：
25 V
25 C 時的連續集電極電流：
60 A
Pd - 功耗：
174 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
系列：
FGA30S120P
打包：
管子
連續集電極電流 Ic 最大值：
60 A
品牌：
安森美半導體/飛兆半導體
柵極-發射極漏電流：
500 nA
產品類別：
IGBT晶體管
出廠包裝數量：
450
子類別：
IGBT
單位重量：
0.225789 oz
Tags
FGA30, FGA3, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
IGBT 1300V 60A 348W TO3P / Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3P Tube
***nell
IGBT, 1.3KV, 60A, 175DEG C, 348W; Available until stocks are exhausted
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
***nell
IGBT, 1.3KV, 60A, 175DEG C, 500W; Available until stocks are exhausted Alternative available
***(Formerly Allied Electronics)
FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247 | ON Semiconductor FGH30S130P
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
***ical
Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube
***Parts
IGBTs - Single, Transistors N-Channel, TO-247-3 60A 1200V 220W Through Hole
***ure Electronics
N-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247
***nell
IGBT, N 1200V 30A TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.75V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins
***ical
Trans IGBT Chip N-CH 1200V 60A 305000mW 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 1200V IGBT GEN8
***or
IRG8P40N120 - DISCRETE IGBT WITH
***ark
G8, 1200V, 40A, COPAK-247AC, TUBE
***el Electronic
CAP CER 4PF 100V C0G/NP0 RADIAL
***ark
Igbt Single Transistor, 63 A, 1.3 Kv, 250 W, 1.3 Kv, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 1300V 63A 250000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 1300V, 63A, 250W, TO247; DC Collector Current: 63A; Collector Emitter Saturation Voltage Vce(on): 1.3kV; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 1.3kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Transistor Type: IGBT
***et
Trans IGBT Chip N-CH 1.3KV 63A 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
33 A - 1300 V - very fast IGBT
***el Electronic
IGBT Transistors 33A 1300V VF IGBT PowerMESH IGBT
***S
French Electronic Distributor since 1988
***r Electronics
Insulated Gate Bipolar Transistor
***et
Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247
***nell
IGBT, SINGLE, 1.35KV, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 349W; Collector Emitter Voltage V(br)ceo: 1.35k; Available until stocks are exhausted
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
Shorted Anode™ Trench IGBTs
ON Semiconductor Shorted Anode Trench IGBTs™ deliver superior conduction, switching performances, and easy parallel operation with exceptional avalanche capability. Fairchild Shorted Anode Trench IGBTs feature Field Stop Trench and Shorted Anode technology and are designed for induction heating, microwave oven applications, and soft switching applications.Learn More
型號 製造商 描述 庫存 價格
FGA30S120P
DISTI # V99:2348_06359130		ON SemiconductorTrans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3PN Rail892
  • 5000:$2.1960
  • 2500:$2.2720
  • 1000:$2.3730
  • 500:$2.7460
  • 250:$2.9990
  • 100:$3.1410
  • 10:$3.5010
  • 1:$4.0250
FGA30S120P
DISTI # FGA30S120P-ND		ON SemiconductorIGBT 1300V 60A 348W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube		450In Stock
  • 1350:$2.5725
  • 900:$3.0503
  • 450:$3.3994
  • 10:$4.3730
  • 1:$4.8700
FGA30S120P
DISTI # 26398855		ON SemiconductorTrans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3PN Rail892
  • 500:$2.7420
  • 250:$2.9939
  • 100:$3.1360
  • 10:$3.4940
  • 3:$4.0170
FGA30S120P
DISTI # FGA30S120P		ON SemiconductorTrans IGBT Chip N-CH 1.3KV 60A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA30S120P)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$2.1900
  • 900:$2.1900
  • 1800:$2.1900
  • 2700:$2.1900
  • 4500:$2.0900
FGA30S120P
DISTI # 95T0023		ON SemiconductorSA2TIGBT TO3PN 30A 1200V / TUBE0
  • 1:$5.0800
  • 10:$4.1200
  • 100:$3.4200
  • 500:$3.0900
  • 1000:$2.6300
  • 2500:$2.5100
  • 10000:$2.3700
FGA30S120P
DISTI # 512-FGA30S120P		ON SemiconductorIGBT Transistors Shorted AnodeTM IGBT
RoHS: Compliant		375
  • 1:$4.6300
  • 10:$3.9300
  • 100:$3.4100
  • 250:$3.2300
  • 500:$2.9000
FGA30S120PFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 60A I(C), 1300V V(BR)CES, N-Channel
RoHS: Compliant		2700
  • 1000:$2.5500
  • 500:$2.6900
  • 100:$2.8000
  • 25:$2.9200
  • 1:$3.1400
FGA30S120P
DISTI # 8648789P		ON SemiconductorIGBT 1200V 30A SHORTED-ANODE TO3PN, TU204
  • 10:£3.5950
  • 40:£3.1450
  • 100:£2.9400
  • 200:£2.8050
FGA30S120P
DISTI # 8648789		ON SemiconductorIGBT 1200V 30A SHORTED-ANODE TO3PN, PK30
  • 2:£4.0800
  • 10:£3.5950
  • 40:£3.1450
  • 100:£2.9400
  • 200:£2.8050
FGA30S120P
DISTI # C1S226600774282		ON SemiconductorTrans IGBT Chip N-CH 1.3KV 60A 3-Pin(3+Tab) TO-3PN Rail
RoHS: Compliant		892
  • 500:$2.7420
  • 250:$2.9939
  • 100:$3.1360
  • 10:$3.4940
  • 1:$4.0170
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可用性
庫存:
318
訂購:
2301
輸入數量:
FGA30S120P的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$4.10
US$4.10
10
US$3.48
US$34.80
100
US$3.02
US$302.00
250
US$2.86
US$715.00
500
US$2.57
US$1 285.00
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