IPB019N08N3 G

IPB019N08N3 G
Mfr. #:
IPB019N08N3 G
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
生命週期:
製造商新產品
數據表:
IPB019N08N3 G 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPB019N08N3 G 更多信息
產品屬性
屬性值
製造商
英飛凌科技
產品分類
晶體管 - FET、MOSFET - 單
系列
OptiMOS 3
打包
捲軸
部分別名
IPB019N08N3GATMA1 IPB019N08N3GXT SP000444110
單位重量
0.056438 oz
商品名
優化MOS
包裝盒
TO-263-7
技術
通道數
1 Channel
配置
單昆特源
晶體管型
1 N-Channel
鈀功耗
300 W
最高工作溫度
+ 175 C
最低工作溫度
- 55 C
秋季時間
33 ns
上升時間
73 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
180 A
Vds-漏-源-擊穿電壓
80 V
Rds-On-Drain-Source-Resistance
1.9 mOhms
晶體管極性
N通道
典型關斷延遲時間
86 ns
典型開啟延遲時間
28 ns
通道模式
增強
Tags
IPB019N08N3G, IPB019N08N3, IPB019N08, IPB019, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型號 製造商 描述 庫存 價格
IPB019N08N3GATMA1
DISTI # V36:1790_06377108
Infineon Technologies AGTrans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$2.9950
  • 500000:$2.9980
  • 100000:$3.2560
  • 10000:$3.7050
  • 1000:$3.7790
IPB019N08N3GATMA1
DISTI # V72:2272_06377108
Infineon Technologies AGTrans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB019N08N3GATMA1
    DISTI # IPB019N08N3GATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 80V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    905In Stock
    • 500:$3.8464
    • 100:$4.5184
    • 10:$5.5150
    • 1:$6.1400
    IPB019N08N3GATMA1
    DISTI # IPB019N08N3GATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 80V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    905In Stock
    • 500:$3.8464
    • 100:$4.5184
    • 10:$5.5150
    • 1:$6.1400
    IPB019N08N3GATMA1
    DISTI # IPB019N08N3GATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 80V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    On Order
    • 2000:$2.9920
    • 1000:$3.1495
    IPB019N08N3G
    DISTI # IPB019N08N3 G
    Infineon Technologies AGTrans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: IPB019N08N3 G)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Asia - 0
      IPB019N08N3GXT
      DISTI # IPB019N08N3GATMA1
      Infineon Technologies AGTrans MOSFET N-CH 80V 180A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB019N08N3GATMA1)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel
      Americas - 0
      • 6000:$2.6900
      • 10000:$2.6900
      • 4000:$2.7900
      • 2000:$2.8900
      • 1000:$2.9900
      IPB019N08N3GATMA1
      DISTI # SP000444110
      Infineon Technologies AGTrans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: SP000444110)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel
      Europe - 0
      • 10000:€2.3900
      • 6000:€2.5900
      • 4000:€2.7900
      • 2000:€2.8900
      • 1000:€2.9900
      IPB019N08N3GATMA1
      DISTI # 60R2644
      Infineon Technologies AGMOSFET, N CHANNEL, 80V, 180A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
      • 500:$3.5900
      • 250:$4.0000
      • 100:$4.2100
      • 50:$4.4300
      • 25:$4.6500
      • 10:$4.8700
      • 1:$5.7300
      IPB019N08N3 G
      DISTI # 726-IPB019N08N3G
      Infineon Technologies AGMOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
      RoHS: Compliant
      783
      • 1:$5.6700
      • 10:$4.8200
      • 100:$4.1700
      • 250:$3.9600
      • 500:$3.5500
      • 1000:$3.0000
      • 2000:$2.8500
      IPB019N08N3GATMA1
      DISTI # 726-IPB019N08N3GATMA
      Infineon Technologies AGMOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
      RoHS: Compliant
      0
      • 1:$5.6700
      • 10:$4.8200
      • 100:$4.1700
      • 250:$3.9600
      • 500:$3.5500
      • 1000:$3.0000
      IPB019N08N3 GInfineon Technologies AG 800
      • 266:$6.8700
      • 119:$7.5570
      • 1:$13.7400
      IPB019N08N3 G
      DISTI # TMOSP9482
      Infineon Technologies AGN-CH80V 180A2mOhm TO263-7
      RoHS: Compliant
      Stock DE - 0Stock HK - 0Stock US - 0
      • 1000:$2.9500
      IPB019N08N3 G
      DISTI # TMOSP8869
      Infineon Technologies AGN-CH80V 180A1.9mOHM TO263-7
      RoHS: Compliant
      Stock DE - 25Stock HK - 0Stock US - 0
      • 1000:$2.9500
      IPB019N08N3GATMA1
      DISTI # 1775520
      Infineon Technologies AGMOSFET, N CH, 180A, 80V, PG-TO263-7710
      • 100:£3.7800
      • 10:£4.3700
      • 1:£5.6800
      IPB019N08N3GATMA1
      DISTI # 1775520
      Infineon Technologies AGMOSFET, N CH, 180A, 80V, PG-TO263-7
      RoHS: Compliant
      54
      • 1000:$4.5200
      • 500:$5.3500
      • 250:$5.9700
      • 100:$6.2800
      • 10:$7.2600
      • 1:$8.5400
      IPB019N08N3 GInfineon Technologies AGRoHS(ship within 1day)1000
      • 1:$6.5800
      • 10:$5.6000
      • 50:$4.9400
      • 100:$4.7400
      • 500:$4.6800
      • 1000:$4.5800
      圖片 型號 描述
      IPB019N06L3 G

      Mfr.#: IPB019N06L3 G

      OMO.#: OMO-IPB019N06L3-G

      MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
      IPB019N06L3GATMA1

      Mfr.#: IPB019N06L3GATMA1

      OMO.#: OMO-IPB019N06L3GATMA1

      MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
      IPB019N08N3GATMA1

      Mfr.#: IPB019N08N3GATMA1

      OMO.#: OMO-IPB019N08N3GATMA1

      MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
      IPB019N08N5ATMA1

      Mfr.#: IPB019N08N5ATMA1

      OMO.#: OMO-IPB019N08N5ATMA1-1190

      DIFFERENTIATED MOSFETS
      IPB019N06L3

      Mfr.#: IPB019N06L3

      OMO.#: OMO-IPB019N06L3-1190

      全新原裝
      IPB019N06L3 G

      Mfr.#: IPB019N06L3 G

      OMO.#: OMO-IPB019N06L3-G-1190

      Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
      IPB019N06L3G

      Mfr.#: IPB019N06L3G

      OMO.#: OMO-IPB019N06L3G-1190

      全新原裝
      IPB019N06L3GATMA1

      Mfr.#: IPB019N06L3GATMA1

      OMO.#: OMO-IPB019N06L3GATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 60V 120A TO263-3
      IPB019N08N

      Mfr.#: IPB019N08N

      OMO.#: OMO-IPB019N08N-1190

      全新原裝
      IPB019N08N3G

      Mfr.#: IPB019N08N3G

      OMO.#: OMO-IPB019N08N3G-1190

      Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: IPB019N08N3 G)
      可用性
      庫存:
      Available
      訂購:
      1500
      輸入數量:
      IPB019N08N3 G的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$4.28
      US$4.28
      10
      US$4.06
      US$40.61
      100
      US$3.85
      US$384.75
      500
      US$3.63
      US$1 816.90
      1000
      US$3.42
      US$3 420.00
      由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
      從...開始
      最新產品
      • IR1167S SmartRectifier™ Control IC
        IR1167S SmartRectifier is a secondary side-driver IC designed to drive N-Channel power MOSFETs, used as synchronous rectifiers in isolated Flyback converters
      • Compare IPB019N08N3 G
        IPB019N08N3G vs IPB019N08N3GATMA1 vs IPB019N08N3GS
      • XDPL8218 Voltage Flyback IC
        Infineon's XDPL8218 is a configurable single-stage SSR flyback controller with high power factor, standby power performance, and constant voltage output.
      • High Current IR3847 Gen3 SupIRBuck®
        IR3847 features a proprietary modulator scheme that reduces jitter by 90% compared to standard solutions
      • IR3823 Integrated Voltage Regulator
        Featuring constant frequency and virtually jitter-free operation with synchronization capability, the new device is well suited to noise-sensitive applications.
      • µIPM™ Integrated Power Module
        µIPM modules are the smallest in the industry, making them suitable for applications that are space-constrained
      Top