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IPB019N06L3 G

IPB019N06L3 G
Mfr. #:
IPB019N06L3 G
製造商:
Infineon Technologies
描述:
Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
生命週期:
製造商新產品
數據表:
IPB019N06L3 G 數據表
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IPB019N06L3 G 更多信息
產品屬性
屬性值
製造商
英飛凌科技
產品分類
晶體管 - FET、MOSFET - 單
系列
OptiMOS 3
打包
捲軸
部分別名
IPB019N06L3GATMA1 IPB019N06L3GXT SP000453020
單位重量
0.068654 oz
商品名
優化MOS
包裝盒
TO-263-3
技術
矽
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
250 W
最高工作溫度
+ 175 C
最低工作溫度
- 55 C
秋季時間
38 ns
上升時間
79 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
120 A
Vds-漏-源-擊穿電壓
60 V
Rds-On-Drain-Source-Resistance
1.9 mOhms
晶體管極性
N通道
典型關斷延遲時間
131 ns
典型開啟延遲時間
35 ns
通道模式
增強
Tags
IPB019N06L3G, IPB019N06L3, IPB019N06L, IPB019N06, IPB019, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型號 製造商 描述 庫存 價格
IPB019N06L3GATMA1
DISTI # V72:2272_06377428		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		977
  • 500:$2.5240
  • 250:$2.8110
  • 100:$2.9590
  • 25:$3.0720
  • 10:$3.4130
  • 1:$4.4143
IPB019N06L3GATMA1
DISTI # V36:1790_06377428		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$1.8500
  • 500000:$1.8520
  • 100000:$1.9880
  • 10000:$2.2080
  • 1000:$2.2440
IPB019N06L3GATMA1
DISTI # IPB019N06L3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1792In Stock
  • 500:$2.7405
  • 100:$3.2193
  • 10:$3.9290
  • 1:$4.3700
IPB019N06L3GATMA1
DISTI # IPB019N06L3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1792In Stock
  • 500:$2.7405
  • 100:$3.2193
  • 10:$3.9290
  • 1:$4.3700
IPB019N06L3GATMA1
DISTI # IPB019N06L3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 2000:$2.1318
  • 1000:$2.2440
IPB019N06L3GATMA1
DISTI # 33709822		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		977
  • 3:$4.4143
IPB019N06L3 G
DISTI # 31073238		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
RoHS: Compliant		78
  • 5:$5.2375
IPB019N06L3GXT
DISTI # IPB019N06L3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB019N06L3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.8900
  • 10000:$1.8900
  • 4000:$1.9900
  • 1000:$2.0900
  • 2000:$2.0900
IPB019N06L3GATMA1
DISTI # SP000453020		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453020)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€1.5900
  • 6000:€1.6900
  • 2000:€1.8900
  • 4000:€1.8900
  • 1000:€1.9900
IPB019N06L3GATMA1
DISTI # 47Y8046		Infineon Technologies AGMOSFET Transistor, N Channel, 120 A, 60 V, 0.0016 ohm, 10 V, 1.7 V RoHS Compliant: Yes0
    IPB019N06L3 G
    DISTI # 726-IPB019N06L3G    		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		1050
    • 1:$4.0400
    • 10:$3.4300
    • 100:$2.9700
    • 250:$2.8200
    • 500:$2.5300
    • 1000:$2.1300
    • 2000:$2.0300
    IPB019N06L3GATMA1
    DISTI # 726-IPB019N06L3GATMA    		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		1639
    • 1:$4.0400
    • 10:$3.4300
    • 100:$2.9700
    • 250:$2.8200
    • 500:$2.5300
    • 1000:$2.1300
    • 2000:$2.0300
    IPB019N06L3GATMA1
    DISTI # 8275293P    		Infineon Technologies AGMOSFET N-CH 120A 60V OPTIMOS3 TO263, RL1440
    • 100:£2.0380
    • 50:£2.3480
    IPB019N06L3GATMA1
    DISTI # IPB019N06L3GATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,120A,250W,PG-TO263-3683
    • 100:$2.4550
    • 10:$2.8267
    • 3:$3.1983
    • 1:$3.5474
    IPB019N06L3GATMA1
    DISTI # 2443430    		Infineon Technologies AGMOSFET, N CH, 60V, 120A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$3.2100
    • 500:$3.8100
    • 250:$4.2500
    • 100:$4.4800
    • 10:$5.1700
    • 1:$6.0900
    圖片 型號 描述
    IPB019N08N3 G

    Mfr.#: IPB019N08N3 G

    OMO.#: OMO-IPB019N08N3-G

    		 MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
    IPB019N08N5ATMA1

    Mfr.#: IPB019N08N5ATMA1

    OMO.#: OMO-IPB019N08N5ATMA1-1190

    		 DIFFERENTIATED MOSFETS
    IPB019N06

    Mfr.#: IPB019N06

    OMO.#: OMO-IPB019N06-1190

    		 全新原裝
    IPB019N06L3

    Mfr.#: IPB019N06L3

    OMO.#: OMO-IPB019N06L3-1190

    		 全新原裝
    IPB019N06L3G

    Mfr.#: IPB019N06L3G

    OMO.#: OMO-IPB019N06L3G-1190

    		 全新原裝
    IPB019N06L3GATMA1

    Mfr.#: IPB019N06L3GATMA1

    OMO.#: OMO-IPB019N06L3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 120A TO263-3
    IPB019N08N

    Mfr.#: IPB019N08N

    OMO.#: OMO-IPB019N08N-1190

    		 全新原裝
    IPB019N08N3 G

    Mfr.#: IPB019N08N3 G

    OMO.#: OMO-IPB019N08N3-G-1190

    		 MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
    IPB019N08N3GATMA1

    Mfr.#: IPB019N08N3GATMA1

    OMO.#: OMO-IPB019N08N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 80V 180A TO263-7
    IPB019N08N3GS

    Mfr.#: IPB019N08N3GS

    OMO.#: OMO-IPB019N08N3GS-1190

    		 全新原裝
    可用性
    庫存:
    Available
    訂購:
    2500
    輸入數量:
    IPB019N06L3 G的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$3.04
    US$3.04
    10
    US$2.89
    US$28.93
    100
    US$2.74
    US$274.05
    500
    US$2.59
    US$1 294.15
    1000
    US$2.44
    US$2 436.00
    從...開始
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