SI2312BDS-T1-E3

SI2312BDS-T1-E3
Mfr. #:
SI2312BDS-T1-E3
製造商:
Vishay
描述:
MOSFET N-CH 20V 3.9A SOT23-3
生命週期:
製造商新產品
數據表:
SI2312BDS-T1-E3 數據表
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ECAD Model:
更多信息:
SI2312BDS-T1-E3 更多信息
產品屬性
屬性值
Tags
SI2312BDS-T, SI2312BDS, SI2312B, SI2312, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 20 V 0.031 Ohms Surface Mount Power Mosfet - SOT-23
***ical
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
***ark
Mosfet, N Channel, 20V, 0.025Ohm, 3.9A, Sot-23-3, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.025Ohm; Transistor Mounting:surface Mount; Msl:- Rohs Compliant: No
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:2312; Current Id Max:5A; Package / Case:SOT-23; Power Dissipation Pd:750µW; Pulse Current Idm:15A; SMD Marking:M2; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
型號 製造商 描述 庫存 價格
SI2312BDS-T1-E3
DISTI # V72:2272_09216792
Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant
3
  • 1:$0.5768
SI2312BDS-T1-E3
DISTI # V36:1790_09216792
Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant
0
    SI2312BDS-T1-E3
    DISTI # SI2312BDS-T1-E3CT-ND
    Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    117509In Stock
    • 1000:$0.1798
    • 500:$0.2327
    • 100:$0.2961
    • 10:$0.3970
    • 1:$0.4600
    SI2312BDS-T1-E3
    DISTI # SI2312BDS-T1-E3DKR-ND
    Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    117509In Stock
    • 1000:$0.1798
    • 500:$0.2327
    • 100:$0.2961
    • 10:$0.3970
    • 1:$0.4600
    SI2312BDS-T1-E3
    DISTI # SI2312BDS-T1-E3TR-ND
    Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    117000In Stock
    • 75000:$0.1301
    • 30000:$0.1314
    • 15000:$0.1386
    • 6000:$0.1489
    • 3000:$0.1592
    SI2312BDS-T1-E3
    DISTI # 33694263
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
    RoHS: Compliant
    24000
    • 3000:$0.2203
    SI2312BDS-T1-E3
    DISTI # SI2312BDS-T1-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Cut TR (SOS) (Alt: SI2312BDS-T1-E3)
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape
    Americas - 890
    • 30000:$0.0980
    • 18000:$0.1005
    • 12000:$0.1031
    • 6000:$0.1059
    • 1:$0.1088
    SI2312BDS-T1-E3
    DISTI # SI2312BDS-T1-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-E3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€0.1919
    • 18000:€0.2059
    • 12000:€0.2239
    • 6000:€0.2599
    • 3000:€0.3809
    SI2312BDS-T1-E3
    DISTI # SI2312BDS-T1-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-E3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.1018
    • 18000:$0.1046
    • 12000:$0.1076
    • 6000:$0.1121
    • 3000:$0.1156
    SI2312BDS-T1-E3
    DISTI # SI2312BDS-T1-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-E3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Asia - 0
      SI2312BDS-T1-E3
      DISTI # 51K6950
      Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 51K6950)
      RoHS: Not Compliant
      Min Qty: 1
      Container: Ammo Pack
      Americas - 0
      • 1000:$0.2700
      • 500:$0.3490
      • 250:$0.3880
      • 100:$0.4250
      • 50:$0.4990
      • 25:$0.5730
      • 1:$0.7500
      SI2312BDS-T1-E3
      DISTI # 85W0175
      Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: 85W0175)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 30000:$0.2250
      • 18000:$0.2280
      • 12000:$0.2310
      • 6000:$0.2410
      • 1:$0.2540
      SI2312BDS-T1-E3
      DISTI # 85W0175
      Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,MSL:- RoHS Compliant: Yes0
      • 1:$0.2820
      • 3000:$0.2820
      SI2312BDS-T1-E3
      DISTI # 51K6950
      Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,Power Dissipation Pd:750mW RoHS Compliant: Yes14208
      • 1:$0.1890
      • 25:$0.1890
      • 50:$0.1890
      • 100:$0.1890
      • 250:$0.1890
      • 500:$0.1890
      SI2312BDS-T1-E3.
      DISTI # 26AC3318
      Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET ROHS COMPLIANT: NO0
      • 1:$0.2820
      • 3000:$0.2820
      SI2312BDS-T1-E3
      DISTI # 70026195
      Vishay SiliconixN-CHANNEL 20-V (D-S) MOSFET
      RoHS: Compliant
      0
      • 3000:$0.3030
      • 6000:$0.2970
      • 15000:$0.2880
      • 30000:$0.2760
      • 75000:$0.2580
      SI2312BDS-T1-E3/BKN
      DISTI # 70026355
      Vishay SiliconixN-CHANNEL 20-V (D-S) MOSFET
      RoHS: Compliant
      0
      • 1:$0.2900
      • 2:$0.2840
      • 5:$0.2760
      • 10:$0.2640
      • 25:$0.2470
      SI2312BDS-T1-E3
      DISTI # 781-SI2312BDS-E3
      Vishay IntertechnologiesMOSFET N-Channel 20V 3.9A
      RoHS: Compliant
      58264
      • 1:$0.5900
      • 10:$0.4570
      • 100:$0.3390
      • 500:$0.2780
      • 1000:$0.2150
      • 3000:$0.1960
      • 6000:$0.1830
      • 9000:$0.1710
      SI2312BDS-T1-E3Vishay IntertechnologiesSingle N-Channel 20 V 0.031 Ohms Surface Mount Power Mosfet - SOT-23
      RoHS: Compliant
      2537Cut Tape/Mini-Reel
      • 1:$0.2600
      • 100:$0.2000
      • 250:$0.1920
      • 500:$0.1850
      • 1500:$0.1740
      SI2312BDS-T1-E3Vishay IntertechnologiesSingle N-Channel 20 V 0.031 Ohms Surface Mount Power Mosfet - SOT-23
      RoHS: Compliant
      36000Reel
      • 3000:$0.1570
      SI2312BDS-T1-E3Vishay Intertechnologies 511
        SI2312BDS-T1-E3Vishay IntertechnologiesMOSFET Transistor, N-Channel, SOT-23498
        • 162:$0.2070
        • 19:$0.3105
        • 1:$0.6900
        SI2312BDST1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
        RoHS: Compliant
        3000
          SI2312BDS-T1-E3
          DISTI # XSFP00000027021
          Vishay Siliconix 
          RoHS: Compliant
          31370 in Stock0 on Order
          • 31370:$0.2093
          • 3000:$0.2243
          SI2312BDS-T1-E3Vishay IntertechnologiesMOSFET N-Channel 20V 3.9A
          RoHS: Compliant
          Americas - 75000
            SI2312BDS-T1-E3
            DISTI # 2396085
            Vishay IntertechnologiesMOSFET, N-CH, 20V, 3.9A, SOT-23-3
            RoHS: Compliant
            26506
            • 500:$0.3510
            • 100:$0.4470
            • 10:$0.5980
            • 1:$0.6900
            SI2312BDS-T1-E3
            DISTI # 2367266
            Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A,
            RoHS: Compliant
            0
            • 3000:$0.2880
            SI2312BDS-T1-E3
            DISTI # 2396085RL
            Vishay IntertechnologiesMOSFET, N-CH, 20V, 3.9A, SOT-23-3
            RoHS: Compliant
            0
            • 500:$0.3510
            • 100:$0.4470
            • 10:$0.5980
            • 1:$0.6900
            SI2312BDS-T1-E3
            DISTI # 1497608
            Vishay IntertechnologiesMOSFET, N, SOT-23
            RoHS: Compliant
            0
            • 500:$0.3510
            • 100:$0.4470
            • 10:$0.5980
            • 1:$0.6900
            SI2312BDS-T1-E3
            DISTI # 2396085
            Vishay IntertechnologiesMOSFET, N-CH, 20V, 3.9A, SOT-23-326062
            • 500:£0.1940
            • 250:£0.2290
            • 100:£0.2640
            • 10:£0.3940
            • 1:£0.4890
            圖片 型號 描述
            SI2312BDS-T1-E3

            Mfr.#: SI2312BDS-T1-E3

            OMO.#: OMO-SI2312BDS-T1-E3

            MOSFET N-Channel 20V 3.9A
            SI2312BDS-T1-GE3

            Mfr.#: SI2312BDS-T1-GE3

            OMO.#: OMO-SI2312BDS-T1-GE3

            MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
            SI2312BD

            Mfr.#: SI2312BD

            OMO.#: OMO-SI2312BD-1190

            全新原裝
            SI2312BDS

            Mfr.#: SI2312BDS

            OMO.#: OMO-SI2312BDS-1190

            全新原裝
            SI2312BDS-T1-E3

            Mfr.#: SI2312BDS-T1-E3

            OMO.#: OMO-SI2312BDS-T1-E3-VISHAY

            MOSFET N-CH 20V 3.9A SOT23-3
            SI2312BDS-T1-GE3

            Mfr.#: SI2312BDS-T1-GE3

            OMO.#: OMO-SI2312BDS-T1-GE3-VISHAY

            MOSFET N-CH 20V 3.9A SOT23-3
            SI2312BDS-T1-E3-CUT TAPE

            Mfr.#: SI2312BDS-T1-E3-CUT TAPE

            OMO.#: OMO-SI2312BDS-T1-E3-CUT-TAPE-1190

            全新原裝
            SI2312BDS-T1-GE3-CUT TAPE

            Mfr.#: SI2312BDS-T1-GE3-CUT TAPE

            OMO.#: OMO-SI2312BDS-T1-GE3-CUT-TAPE-1190

            全新原裝
            可用性
            庫存:
            Available
            訂購:
            4000
            輸入數量:
            SI2312BDS-T1-E3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
            參考價格(美元)
            數量
            單價
            小計金額
            1
            US$0.21
            US$0.21
            10
            US$0.20
            US$1.97
            100
            US$0.19
            US$18.63
            500
            US$0.18
            US$88.00
            1000
            US$0.17
            US$165.60
            由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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