IPB042N10N3GE818XT

Mfr. #:: IPB042N10N3GE818XT
製造商:: Infineon Technologies
描述:: RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2
生命週期:: 製造商新產品
數據表:: IPB042N10N3GE818XT 數據表
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更多信息:: IPB042N10N3GE818XT 更多信息

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: IPB042N10

打包: 捲軸

部分別名: IPB042N10N3GE8187ATMA1 SP000939332

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 214 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 14 ns

上升時間: 59 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 100 A

Vds-漏-源-擊穿電壓: 100 V

Rds-On-Drain-Source-Resistance: 4.2 mOhms

晶體管極性: N通道

典型關斷延遲時間: 48 ns

Qg-門電荷: 88 nC

Tags: IPB042N10N3GE, IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB042N10N3GE818XT 描述

***i-Key: MOSFET N-CH 100V 100A TO263-3

IPB042N10N3GE818XT 更多信息

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

型號	製造商	描述	庫存	價格
IPB042N10N3GE818XT DISTI # 726-IPB042N10N3GEMA1	Infineon Technologies AG	MOSFET N-Ch 100V 100A D2PAK-2 RoHS: Compliant	0	1:$2.7900 10:$2.3700 100:$1.8900 500:$1.6600 1000:$1.3700 2000:$1.2800 5000:$1.2300

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