IPB042N10N3GATMA1

IPB042N10N3GATMA1
Mfr. #:
IPB042N10N3GATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
生命週期:
製造商新產品
數據表:
IPB042N10N3GATMA1 數據表
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ECAD Model:
更多信息:
IPB042N10N3GATMA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
PG-TO-263-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
100 V
Id - 連續漏極電流:
100 A
Rds On - 漏源電阻:
4.2 mOhms
Vgs th - 柵源閾值電壓:
2 V
Vgs - 柵源電壓:
10 V
Qg - 門電荷:
88 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
214 W
配置:
單身的
頻道模式:
增強
商品名:
優化MOS
打包:
捲軸
高度:
4.4 mm
長度:
10 mm
系列:
OptiMOS 3
晶體管類型:
1 N-Channel
寬度:
9.25 mm
品牌:
英飛凌科技
正向跨導 - 最小值:
73 S
秋季時間:
14 ns
產品類別:
MOSFET
上升時間:
59 ns
出廠包裝數量:
1000
子類別:
MOSFET
典型關斷延遲時間:
48 ns
典型的開啟延遲時間:
27 ns
第 # 部分別名:
G IPB042N10N3 IPB42N1N3GXT SP000446880
單位重量:
0.139332 oz
Tags
IPB042N10N3GA, IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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MOSFET, N CH, 100V, 100A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0095Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
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MOSFET, N-CH, 80V, 100A, 175DEG C, 214W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 80V, 100A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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***ment14 APAC
MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***nell
MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
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MOSFET, N CH, 70A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
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Mosfet, N Channel, 100V, 90A, To-263-3; Channel Type:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 100V, 90A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:300W; Voltage Vgs Max:20V
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MOSFET, N-CH, 100V, 120A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 100V, 120A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
型號 製造商 描述 庫存 價格
IPB042N10N3GATMA1
DISTI # V72:2272_06378065
Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
36
  • 25:$1.9617
  • 10:$1.9682
  • 1:$2.2261
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6222In Stock
  • 500:$1.8588
  • 100:$2.3899
  • 10:$2.9740
  • 1:$3.2900
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6222In Stock
  • 500:$1.8588
  • 100:$2.3899
  • 10:$2.9740
  • 1:$3.2900
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
6000In Stock
  • 1000:$1.4953
IPB042N10N3GATMA1
DISTI # 31049885
Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 1000:$1.4933
IPB042N10N3GATMA1
DISTI # 31010737
Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
36
  • 25:$1.9617
  • 10:$1.9682
  • 7:$2.2261
IPB042N10N3GXT
DISTI # IPB042N10N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB042N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 1000
  • 1000:$1.2900
  • 2000:$1.1900
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.1900
IPB042N10N3GATMA1
DISTI # 47Y8047
Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V , RoHS Compliant: Yes705
  • 1:$2.7600
  • 10:$2.3500
  • 25:$2.1900
  • 50:$2.0400
  • 100:$1.8800
  • 250:$1.7700
  • 500:$1.6500
IPB042N10N3GATMA1Infineon Technologies AGSingle N-Channel 100 V 4.2 mOhm 88 nC OptiMOS Power Mosfet - D2PAK
RoHS: Not Compliant
1000Reel
  • 1000:$1.2400
IPB042N10N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
500
  • 1000:$1.0000
  • 500:$1.0500
  • 100:$1.1000
  • 25:$1.1400
  • 1:$1.2300
IPB042N10N3GATMA1
DISTI # 726-IPB042N10N3GATMA
Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
RoHS: Compliant
1607
  • 1:$2.7500
  • 10:$2.3400
  • 100:$1.8700
  • 500:$1.6400
  • 1000:$1.3600
  • 2000:$1.2600
IPB042N10N3 G
DISTI # 726-IPB042N10N3G
Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
RoHS: Compliant
830
  • 1:$2.7600
  • 10:$2.3500
  • 100:$1.8800
  • 500:$1.6500
  • 1000:$1.3600
IPB042N10N3GATMA1
DISTI # 8275237
Infineon Technologies AGMOSFET N-CH 100A 100V OPTIMOS3 TO263, PK370
  • 10:£1.5750
  • 50:£1.3280
  • 250:£1.1860
  • 500:£1.0290
IPB042N10N3GATMA1
DISTI # 8275237P
Infineon Technologies AGMOSFET N-CH 100A 100V OPTIMOS3 TO263, RL980
  • 50:£1.3280
  • 250:£1.1860
  • 500:£1.0290
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,100A,214W,PG-TO263-3778
  • 1:$1.8961
  • 3:$1.6261
  • 10:$1.3077
  • 100:$1.1371
  • 1000:$1.0598
IPB042N10N3GATMA1
DISTI # 2443431
Infineon Technologies AGMOSFET, N CH, 100V, 100A, TO-263-3
RoHS: Compliant
680
  • 1:$4.3700
  • 10:$3.7200
  • 100:$2.9800
  • 500:$2.6200
  • 1000:$2.1600
  • 2000:$2.0100
  • 5000:$1.9400
  • 10000:$1.8700
IPB042N10N3GATMA1
DISTI # XSFP00000153641
Infineon Technologies AGPowerField-EffectTransistor,100AI(D),100V,0.0042ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-263AB
RoHS: Compliant
1346
  • 1000:$1.6500
  • 1346:$1.5500
IPB042N10N3GATMA1
DISTI # 2443431
Infineon Technologies AGMOSFET, N CH, 100V, 100A, TO-263-3
RoHS: Compliant
680
  • 1:£2.3700
  • 10:£1.3400
  • 100:£1.2700
  • 250:£1.2000
  • 500:£1.0400
IPB042N10N3GATMA1
DISTI # C1S322000212747
Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
36
  • 25:$1.9617
  • 10:$1.9682
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IC CAN TRANSCEIVER 3.3V 8-SOIC
可用性
庫存:
Available
訂購:
1986
輸入數量:
IPB042N10N3GATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$2.62
US$2.62
10
US$2.22
US$22.20
100
US$1.78
US$178.00
500
US$1.55
US$775.00
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