TGF2929-HM

Mfr. #:: TGF2929-HM
製造商:: Qorvo
描述:: RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
生命週期:: 製造商新產品
數據表:: TGF2929-HM 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: TGF2929-HM 更多信息

產品屬性
屬性值

製造商

產品分類: 晶體管 - FET、MOSFET - 單

系列: 轉化生長因子

打包: 胡扯

部分別名: 1135635

安裝方式: 貼片/貼片

工作溫度範圍: - 40 C to + 85 C

包裝盒: Flange Ceramic-2

技術: 氮化鎵碳化矽

配置: 單身的

晶體管型: HEMT

獲得: 17.4 dB

輸出功率: 132 W

鈀功耗: 140 W

最高工作溫度: + 85 C

最低工作溫度: - 40 C

工作頻率: DC to 3.5 GHz

Id 連續漏極電流: 7.2 A

Vds-漏-源-擊穿電壓: 50 V

晶體管極性: N通道

開發套件: TGF2929-HM EVB1

VGS-柵極-源極擊穿電壓: - 2.8 V

Tags: TGF292, TGF29, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2929-HM 描述

***W: RF Power Transistor, DC to 3.5 GHz, 100 W, 17.4 dB, 28 V, GaN, NI-360 Hermetic

***hardson RFPD: RF POWER TRANSISTOR

TGF2929-HM 更多信息

TGF2929 GaN RF Power Transistors: Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

型號	製造商	描述	庫存	價格
TGF2929-HM DISTI # 772-TGF2929-HM	Qorvo	RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN RoHS: Compliant	0	25:$338.4400
TGF2929-HM-EVB DISTI # 772-TGF2929-HM-EVB	Qorvo	RF Development Tools RoHS: Compliant	0	1:$875.0000

相關產品

圖片	型號	描述
	Mfr.#: TGF2929-HM OMO.#: OMO-TGF2929-HM	RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
	Mfr.#: TGF2957 OMO.#: OMO-TGF2957	RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
	Mfr.#: TGF2936 OMO.#: OMO-TGF2936	RF JFET Transistors DC-25GHz 10Watt NF 1.3dB GaN
	Mfr.#: TGF2929-FL OMO.#: OMO-TGF2929-FL	RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
	Mfr.#: TGF2979-SM OMO.#: OMO-TGF2979-SM-318	RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
	Mfr.#: TGF2956 OMO.#: OMO-TGF2956-318	RF JFET Transistors DC-12GHz 55W 32V GaN P3dB @ 3GHz 47.6dBm
	Mfr.#: TGF2929-FS/FL, 3.1-3.5GHZ EVB OMO.#: OMO-TGF2929-FS-FL-3-1-3-5GHZ-EVB-319	RF MOSFET Transistors DC-3.5GHz 100W Eval Board
	Mfr.#: TGF2979-SM-EVB OMO.#: OMO-TGF2979-SM-EVB-1152	RF Development Tools
	Mfr.#: TGF2929-HM-EVB OMO.#: OMO-TGF2929-HM-EVB-1152	RF Development Tools
	Mfr.#: TGF2960 OMO.#: OMO-TGF2960-1190	全新原裝