BSC018NE2LSI

Mfr. #:: BSC018NE2LSI
製造商:: Infineon Technologies
描述:: Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
生命週期:: 製造商新產品
數據表:: BSC018NE2LSI 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: FET - 單

系列: 優化MOS

打包: Digi-ReelR 替代包裝

部分別名: BSC018NE2LSIATMA1 BSC018NE2LSIXT SP000906030

包裝盒: 8-PowerTDFN

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 1 Channel

供應商-設備-包: PG-TDSON-8

FET型: MOSFET N 溝道，金屬氧化物

最大功率: 69W

晶體管型: 1 N-Channel

漏源電壓 Vdss: 25V

輸入電容-Ciss-Vds: 2500pF @ 12V

FET-Feature: 標準

Current-Continuous-Drain-Id-25°C: 29A (Ta), 100A (Tc)

Rds-On-Max-Id-Vgs: 1.8 mOhm @ 30A, 10V

Vgs-th-Max-Id: 2V @ 250μA

柵極電荷-Qg-Vgs: 36nC @ 10V

晶體管極性: N通道

Tags: BSC018NE2LSI, BSC018NE2LS, BSC018NE, BSC018, BSC01, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型號	製造商	描述	庫存	價格
BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 25V 29A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	27In Stock	1000:$0.6798 500:$0.8611 100:$1.1103 10:$1.4050 1:$1.5900
BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 29A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	27In Stock	1000:$0.6798 500:$0.8611 100:$1.1103 10:$1.4050 1:$1.5900
BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 25V 29A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.5852
BSC018NE2LSIATMA1 DISTI # BSC018NE2LSI	Infineon Technologies AG	Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP (Alt: BSC018NE2LSI) RoHS: Compliant Min Qty: 5000	Asia - 0
BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP - Tape and Reel (Alt: BSC018NE2LSIATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.4609 10000:$0.4439 20000:$0.4279 30000:$0.4129 50000:$0.4059
BSC018NE2LSIATMA1 DISTI # 34AC1374	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power DissipationRoHS Compliant: Yes	4867	1:$1.5900 10:$1.4100 25:$1.3100 50:$1.2100 100:$1.1100 250:$0.9860 500:$0.8610 1000:$0.6790
BSC018NE2LSI	Infineon Technologies AG	Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	4415	1000:$0.5300 500:$0.5500 100:$0.5800 25:$0.6000 1:$0.6500
BSC018NE2LSI DISTI # 726-BSC018NE2LSI	Infineon Technologies AG	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant	987	1:$1.3200 10:$1.1200 100:$0.8610 500:$0.7610 1000:$0.6000
BSC018NE2LSIXT DISTI # 726-BSC018NE2LSIATMA	Infineon Technologies AG	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant	0	5000:$0.5320
BSC018NE2LSI	Infineon Technologies AG		8481
BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,25V,29A,69W,PG-TDSON-8	5048	1:$0.3800 5:$0.3440 25:$0.3332
BSC018NE2LSIATMA1 DISTI # 2781051	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON RoHS: Compliant	4877	5:£1.1700 25:£1.0600 100:£0.8410 250:£0.7470 500:£0.6520
BSC018NE2LSIATMA1 DISTI # 2781051	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON RoHS: Compliant	4867	5:$1.7000 25:$1.4800 100:$1.2100 250:$1.0200 500:$0.8810 1000:$0.8330 5000:$0.7900

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