BSC018N04LSGXT

BSC018N04LSGXT
Mfr. #:
BSC018N04LSGXT
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
生命週期:
製造商新產品
數據表:
BSC018N04LSGXT 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
技術:
安裝方式:
貼片/貼片
包裝/案例:
TDSON-8
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
40 V
Id - 連續漏極電流:
100 A
Rds On - 漏源電阻:
1.5 mOhms
Vgs th - 柵源閾值電壓:
1.2 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
150 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
125 W
配置:
單身的
頻道模式:
增強
打包:
捲軸
高度:
1.27 mm
長度:
5.9 mm
晶體管類型:
1 N-Channel
寬度:
5.15 mm
品牌:
英飛凌科技
正向跨導 - 最小值:
90 S
秋季時間:
9 ns
產品類別:
MOSFET
上升時間:
7.4 ns
出廠包裝數量:
5000
子類別:
MOSFET
典型關斷延遲時間:
55 ns
典型的開啟延遲時間:
13 ns
第 # 部分別名:
BSC018N04LS BSC018N04LSGATMA1 G SP000388293
Tags
BSC018N04LSG, BSC018N0, BSC018, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronic Components
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
型號 製造商 描述 庫存 價格
BSC018N04LSGATMA1
DISTI # V72:2272_06383456
Infineon Technologies AGTrans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R
RoHS: Compliant
0
    BSC018N04LSGATMA1
    DISTI # V36:1790_06383456
    Infineon Technologies AGTrans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R
    RoHS: Compliant
    0
    • 5000000:$0.4484
    • 2500000:$0.4487
    • 500000:$0.4750
    • 50000:$0.5221
    • 5000:$0.5300
    BSC018N04LSGATMA1
    DISTI # BSC018N04LSGATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
    Min Qty: 1
    Container: Cut Tape (CT)
    7068In Stock
    • 1000:$0.7223
    • 500:$0.9149
    • 100:$1.1075
    • 10:$1.4210
    • 1:$1.5900
    BSC018N04LSGATMA1
    DISTI # BSC018N04LSGATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
    Min Qty: 1
    Container: Digi-Reel®
    7068In Stock
    • 1000:$0.7223
    • 500:$0.9149
    • 100:$1.1075
    • 10:$1.4210
    • 1:$1.5900
    BSC018N04LSGATMA1
    DISTI # BSC018N04LSGATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
    Min Qty: 5000
    Container: Tape & Reel (TR)
    5000In Stock
    • 5000:$0.6218
    BSC018N04LSGATMA1
    DISTI # 35171897
    Infineon Technologies AGTrans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R
    RoHS: Compliant
    880
    • 95:$0.6625
    BSC018N04LSGATMA1
    DISTI # BSC018N04LSGATMA1
    Infineon Technologies AGTrans MOSFET N-CH 40V 30A 8-Pin TDSON EP - Tape and Reel (Alt: BSC018N04LSGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 50000:$0.4749
    • 30000:$0.4829
    • 20000:$0.4999
    • 10000:$0.5189
    • 5000:$0.5379
    BSC018N04LSGATMA1
    DISTI # SP000388293
    Infineon Technologies AGTrans MOSFET N-CH 40V 30A 8-Pin TDSON EP (Alt: SP000388293)
    Min Qty: 5000
    Europe - 0
    • 50000:€0.5722
    • 30000:€0.6468
    • 20000:€0.7049
    • 10000:€0.7712
    • 5000:€0.8293
    BSC018N04LSGATMA1
    DISTI # 60R2476
    Infineon Technologies AGMOSFET, N CH, 100A, 40V, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power RoHS Compliant: Yes
    RoHS: Compliant
    6311
    • 10000:$0.5800
    • 2500:$0.6000
    • 1000:$0.7390
    • 500:$0.8490
    • 100:$0.9600
    • 10:$1.2500
    • 1:$1.4600
    BSC018N04LS G
    DISTI # 726-BSC018N04LSG
    Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
    RoHS: Compliant
    6021
    • 1:$1.5300
    • 10:$1.3000
    • 100:$1.0000
    • 500:$0.8890
    • 1000:$0.7020
    BSC018N04LSGATMA1
    DISTI # BSC018N04LSGATMA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,40V,100A,125W,PG-TDSON-8445
    • 1000:$1.2033
    • 100:$1.2924
    • 25:$1.3370
    • 5:$1.4930
    • 1:$1.6824
    BSC018N04LSGATMA1
    DISTI # 1775426
    Infineon Technologies AGMOSFET, N CH, 100A, 40V, PG-TDSON-8
    RoHS: Compliant
    5706
    • 5000:£0.5550
    • 1000:£0.6710
    • 500:£0.8510
    • 250:£0.9410
    • 100:£1.0300
    • 10:£1.3600
    • 1:£1.6800
    圖片 型號 描述
    BSC018NE2LSI

    Mfr.#: BSC018NE2LSI

    OMO.#: OMO-BSC018NE2LSI

    MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    BSC018N04LSGXT

    Mfr.#: BSC018N04LSGXT

    OMO.#: OMO-BSC018N04LSGXT

    MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
    BSC018N04LSGXT

    Mfr.#: BSC018N04LSGXT

    OMO.#: OMO-BSC018N04LSGXT-1190

    MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
    BSC018N04LSG-S

    Mfr.#: BSC018N04LSG-S

    OMO.#: OMO-BSC018N04LSG-S-1190

    全新原裝
    BSC018NE2L

    Mfr.#: BSC018NE2L

    OMO.#: OMO-BSC018NE2L-1190

    全新原裝
    BSC018NE2LSI

    Mfr.#: BSC018NE2LSI

    OMO.#: OMO-BSC018NE2LSI-1190

    Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSC018NE2LSI BSC018NE2LS

    Mfr.#: BSC018NE2LSI BSC018NE2LS

    OMO.#: OMO-BSC018NE2LSI-BSC018NE2LS-1190

    全新原裝
    BSC018NE2LSIATMA1

    Mfr.#: BSC018NE2LSIATMA1

    OMO.#: OMO-BSC018NE2LSIATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 25V 29A TDSON-8
    BSC018NE2LSATMA1

    Mfr.#: BSC018NE2LSATMA1

    OMO.#: OMO-BSC018NE2LSATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 25V 100A TDSON-8
    BSC018NE2LS

    Mfr.#: BSC018NE2LS

    OMO.#: OMO-BSC018NE2LS-317

    RF Bipolar Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    可用性
    庫存:
    Available
    訂購:
    5000
    輸入數量:
    BSC018N04LSGXT的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    從...開始
    最新產品
    Top