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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IGD06N60TATMA1 DISTI # V72:2272_06384581 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant | 1990 |
|
| IGD06N60TATMA1 DISTI # IGD06N60TATMA1CT-ND | Infineon Technologies AG | IGBT 600V 12A 88W TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IGD06N60TATMA1 DISTI # IGD06N60TATMA1DKR-ND | Infineon Technologies AG | IGBT 600V 12A 88W TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IGD06N60TATMA1 DISTI # IGD06N60TATMA1TR-ND | Infineon Technologies AG | IGBT 600V 12A 88W TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IGD06N60TATMA1 DISTI # 29028577 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant | 1990 |
|
| IGD06N60TATMA1 DISTI # IGD06N60TATMA1 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R - Tape and Reel (Alt: IGD06N60TATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| IGD06N60TATMA1 DISTI # IGD06N60TATMA1 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R - Bulk (Alt: IGD06N60TATMA1) RoHS: Compliant Min Qty: 863 Container: Bulk | Americas - 0 |
|
| IGD06N60TATMA1 DISTI # 13AC8999 | Infineon Technologies AG | TRANSISTOR, IGBT, 600V, 12A, TO-252,DC Collector Current:12A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:88W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-252,No. of Pins:3Pins,RoHS Compliant: Yes | 2490 |
|
| IGD06N60TATMA1 DISTI # 726-IGD06N60TATMA1 | Infineon Technologies AG | IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod RoHS: Compliant | 1868 |
|
| IGD06N60TATMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA RoHS: Compliant | 394 |
|
| IGD06N60TATMA1 DISTI # IGD06N60T | Infineon Technologies AG | 600V 12A 88W TO252 RoHS: Compliant | 0 |
|
| IGD06N60TATMA1 DISTI # 2725778 | Infineon Technologies AG | TRANSISTOR, IGBT, 600V, 12A, TO-252 | 2490 |
|
| IGD06N60TATMA1 DISTI # 2725778 | Infineon Technologies AG | TRANSISTOR, IGBT, 600V, 12A, TO-252 RoHS: Compliant | 2490 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: IGD06N60TATMA1 OMO.#: OMO-IGD06N60TATMA1 |
IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop |
|
Mfr.#: IGD06N60T OMO.#: OMO-IGD06N60T-1190 |
IGBT Transistors LOW LOSS IGBT TECH 600V 6A |
|
Mfr.#: IGD06N60TATMA1 |
IGBT 600V 12A 88W TO252-3 |
|
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Mfr.#: IGD06N60TS OMO.#: OMO-IGD06N60TS-1190 |
全新原裝 |