SPW12N50C3

Mfr. #:: SPW12N50C3
製造商:: Rochester Electronics, LLC
描述:: IGBT Transistors MOSFET N-Ch 560V 11.6A TO247-3 CoolMOS C3
生命週期:: 製造商新產品
數據表:: SPW12N50C3 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商: 英飛凌

產品分類: FET - 單

Tags: SPW12, SPW1, SPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPW12N50C3 描述

***p One Stop Japan: Trans MOSFET N-CH 560V 11.6A 3-Pin(3+Tab) TO-247

***ment14 APAC: MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-93; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-218; Current Id Max:11.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:SOT-93; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulse Current Idm:38A; Termination Type:Through Hole; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

型號	製造商	描述	庫存	價格
SPW12N50C3FKSA1 DISTI # SPW12N50C3FKSA1-ND	Infineon Technologies AG	MOSFET N-CH 560V 11.6A TO-247 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
SPW12N50C3 DISTI # SPW12N50C3	Infineon Technologies AG	Trans MOSFET N-CH 560V 11.6A 3-Pin TO-247 Tube - Bulk (Alt: SPW12N50C3) RoHS: Not Compliant Min Qty: 228 Container: Bulk	Americas - 0	228:$1.4900 230:$1.4900 458:$1.3900 1140:$1.3900 2280:$1.2900
SPW12N50C3XK DISTI # SPW12N50C3XK	Infineon Technologies AG	- Bulk (Alt: SPW12N50C3XK) Min Qty: 1087 Container: Bulk	Americas - 0	1087:$0.3309 1089:$0.3189 2176:$0.3069 5435:$0.2969 10870:$0.2919
SPW12N50C3IN DISTI # SPW12N50C3IN	Infineon Technologies AG	- Bulk (Alt: SPW12N50C3IN) Min Qty: 1087 Container: Bulk	Americas - 0	1087:$0.3309 1089:$0.3189 2176:$0.3069 5435:$0.2969 10870:$0.2919
SPW12N50C3FKSA1 DISTI # SPW12N50C3FKSA1	Infineon Technologies AG	- Bulk (Alt: SPW12N50C3FKSA1) RoHS: Compliant Min Qty: 228 Container: Bulk	Americas - 0	228:$1.4900 230:$1.4900 458:$1.3900 1140:$1.3900 2280:$1.2900
SPW12N50C3 DISTI # 726-SPW12N50C3	Infineon Technologies AG	MOSFET N-Ch 560V 11.6A TO247-3 CoolMOS C3 RoHS: Compliant	0
SPW12N50C3	Infineon Technologies AG	Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD RoHS: Compliant	3505	1000:$1.4500 500:$1.5200 100:$1.5900 25:$1.6500 1:$1.7800
SPW12N50C3FKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD RoHS: Compliant	240	1000:$1.4500 500:$1.5200 100:$1.5900 25:$1.6500 1:$1.7800
SPW12N50C3XK	Infineon Technologies AG	RoHS: Not Compliant	380	1000:$0.3000 500:$0.3200 100:$0.3300 25:$0.3500 1:$0.3700
SPW12N50C3IN	Infineon Technologies AG	RoHS: Not Compliant	369	1000:$0.3000 500:$0.3200 100:$0.3300 25:$0.3500 1:$0.3700

相關產品

圖片	型號	描述
	Mfr.#: SPW12N50C3 OMO.#: OMO-SPW12N50C3-126	IGBT Transistors MOSFET N-Ch 560V 11.6A TO247-3 CoolMOS C3
	Mfr.#: SPW12N50C3,12N50C3 OMO.#: OMO-SPW12N50C3-12N50C3-1190	全新原裝
	Mfr.#: SPW12N50C3FKSA1 OMO.#: OMO-SPW12N50C3FKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 560V 11.6A TO-247
	Mfr.#: SPW12N50C3PB-FREE OMO.#: OMO-SPW12N50C3PB-FREE-1190	全新原裝