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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| SPB08P06PGATMA1 DISTI # V72:2272_06384662 | Infineon Technologies AG | Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1971 |
|
| SPB08P06PGATMA1 DISTI # V36:1790_06384662 | Infineon Technologies AG | Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 | |
| SPB08P06PGATMA1 DISTI # SPB08P06PGATMA1TR-ND | Infineon Technologies AG | MOSFET P-CH 60V 8.8A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SPB08P06PGATMA1 DISTI # 27576379 | Infineon Technologies AG | Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1971 |
|
| SPB08P06PGATMA1 DISTI # 31053382 | Infineon Technologies AG | Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1000 |
|
| SPB08P06PG DISTI # SP000102179 | Infineon Technologies AG | Trans MOSFET P-CH 60V 8.8A 3-Pin TO-263 T/R (Alt: SP000102179) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| SPB08P06PGAT DISTI # SPB08P06PGATMA1 | Infineon Technologies AG | Trans MOSFET P-CH 60V 8.8A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB08P06PGATMA1) RoHS: Compliant Min Qty: 2000 Container: Reel | Americas - 0 |
|
| SPB08P06PGATMA1 DISTI # SP000102179 | Infineon Technologies AG | Trans MOSFET P-CH 60V 8.8A 3-Pin TO-263 T/R (Alt: SP000102179) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| SPB08P06PGATMA1 DISTI # 47W3751 | Infineon Technologies AG | MOSFET, P CHANNEL, 60V, 8.8A, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-8.8A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.221ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes | 0 |
|
| SPB08P06P G DISTI # 726-SPB08P06PG | Infineon Technologies AG | MOSFET P-Ch -60V 8.8A D2PAK-2 RoHS: Compliant | 1976 |
|
| SPB08P06PGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 4000 |
|
| SPB08P06PGATMA1 DISTI # 8922201P | Infineon Technologies AG | MOSFET P-CHANNEL 60V 8.8A TO263-3, RL | 2640 |
|
| SPB08P06PGXT | Infineon Technologies AG | 242 | ||
| SPB08P06PGATMA1 DISTI # SPB08P06PGATMA1 | Infineon Technologies AG | Transistor: P-MOSFET,unipolar,-60V,-8.8A,42W,PG-TO263-3 | 625 |
|
| SPB08P06PGATMA1 DISTI # 2212898 | Infineon Technologies AG | MOSFET, P-CH, 60V, 8.8A, TO-263 RoHS: Compliant | 743 |
|
| SPB08P06PGATMA1 DISTI # 2212898 | Infineon Technologies AG | MOSFET, P-CH, 60V, 8.8A, TO-263 | 1303 |
|
| SPB08P06PGXT | Infineon Technologies AG | -60V,-8.8A,P-channel power MOSFET | 210 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: SPB08P06P G OMO.#: OMO-SPB08P06P-G |
MOSFET P-Ch -60V 8.8A D2PAK-2 |
|
|
Mfr.#: SPB08P06PGATMA1 OMO.#: OMO-SPB08P06PGATMA1 |
MOSFET SMALL SIGNAL+P-CH |
|
Mfr.#: SPB0804-4R7M OMO.#: OMO-SPB0804-4R7M-1190 |
全新原裝 |
|
|
Mfr.#: SPB08N03L OMO.#: OMO-SPB08N03L-1190 |
- Bulk (Alt: SPB08N03L) |
|
|
Mfr.#: SPB08N50C3 OMO.#: OMO-SPB08N50C3-1190 |
全新原裝 |
|
Mfr.#: SPB08P06P |
MOSFET P-CH 60V 8.8A D2PAK |
|
|
Mfr.#: SPB08P06P G OMO.#: OMO-SPB08P06P-G-1190 |
MOSFET P-Ch -60V 8.8A D2PAK-2 |
|
|
Mfr.#: SPB08P06PG OMO.#: OMO-SPB08P06PG-1190 |
Trans MOSFET P-CH 60V 8.8A 3-Pin TO-263 T/R (Alt: SP000102179) |
|
|
Mfr.#: SPB08P06PGATMA1 |
MOSFET P-CH 60V 8.8A TO-263 |
|
|
Mfr.#: SPB08P06PGXT OMO.#: OMO-SPB08P06PGXT-1190 |
-60V,-8.8A,P-channel power MOSFET |
