SPB08P06PGATMA1

Mfr. #:: SPB08P06PGATMA1
製造商:: Infineon Technologies
描述:: MOSFET P-CH 60V 8.8A TO-263
生命週期:: 製造商新產品
數據表:: SPB08P06PGATMA1 數據表
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ECAD Model:

產品屬性
屬性值

Tags: SPB08P06PG, SPB08P, SPB08, SPB0, SPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPB08P06PGATMA1 描述

***ark: MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain

***Components: In a Pack of 20, P-Channel MOSFET, 8.8 A, 60 V, 3-Pin D2PAK Infineon SPB08P06PGATMA1

***ical: Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R

***p One Stop Global: Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) TO-263

***et: Trans MOSFET P-CH 60V 8.8A 3-Pin TO-263 T/R

***i-Key: MOSFET P-CH 60V 8.8A TO-263

***ronik: P-CH 60V 300mOhm 8,8A TO263

***ment14 APAC: MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.221ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:42W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

Market price

型號	製造商	描述	庫存	價格
SPB08P06PGATMA1 DISTI # V72:2272_06384662	Infineon Technologies AG	Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1971	1000:$0.4955 500:$0.5008 250:$0.5719 100:$0.5779 25:$0.7571 10:$0.8411 1:$0.9862
SPB08P06PGATMA1 DISTI # V36:1790_06384662	Infineon Technologies AG	Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$0.3215 500000:$0.3218 100000:$0.3573 10000:$0.4234 1000:$0.4347
SPB08P06PGATMA1 DISTI # SPB08P06PGATMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 60V 8.8A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call	1000:$0.4347
SPB08P06PGATMA1 DISTI # 27576379	Infineon Technologies AG	Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1971	23:$0.9862
SPB08P06PGATMA1 DISTI # 31053382	Infineon Technologies AG	Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$0.2946
SPB08P06PGATMA1 DISTI # SP000102179	Infineon Technologies AG	Trans MOSFET P-CH 60V 8.8A 3-Pin TO-263 T/R (Alt: SP000102179) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 4000	10000:€0.2789 6000:€0.3009 4000:€0.3259 2000:€0.3559 1000:€0.4349
SPB08P06PGAT DISTI # SPB08P06PGATMA1	Infineon Technologies AG	Trans MOSFET P-CH 60V 8.8A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB08P06PGATMA1) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	20000:$0.2799 10000:$0.2849 6000:$0.2949 4000:$0.3059 2000:$0.3179
SPB08P06PGATMA1 DISTI # 47W3751	Infineon Technologies AG	MOSFET, P CHANNEL, 60V, 8.8A, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-8.8A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.221ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes	797	500:$0.5300 100:$0.6000 10:$0.7810 1:$0.9090
SPB08P06P G DISTI # 726-SPB08P06PG	Infineon Technologies AG	MOSFET P-Ch -60V 8.8A D2PAK-2 RoHS: Compliant	1968	1:$0.9000 10:$0.7730 100:$0.5940 500:$0.5250 1000:$0.4140 2000:$0.3680 10000:$0.3540
SPB08P06PGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	4000	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3300 1:$0.3600
SPB08P06PGATMA1 DISTI # 8922201P	Infineon Technologies AG	MOSFET P-CHANNEL 60V 8.8A TO263-3, RL	2640	5000:£0.2970 2000:£0.3030 1000:£0.3090 200:£0.4370
SPB08P06PGATMA1 DISTI # SPB08P06PGATMA1	Infineon Technologies AG	Transistor: P-MOSFET,unipolar,-60V,-8.8A,42W,PG-TO263-3	625	100:$0.3900 10:$0.4500 3:$0.5600 1:$0.6500
SPB08P06PGATMA1 DISTI # 2212898	Infineon Technologies AG	MOSFET, P-CH, 60V, 8.8A, TO-263 RoHS: Compliant	797	1000:$0.6240 500:$0.7910 100:$0.8950 10:$1.1600 1:$1.3600
SPB08P06PGATMA1 DISTI # 2212898	Infineon Technologies AG	MOSFET, P-CH, 60V, 8.8A, TO-263	1347	500:£0.3800 250:£0.4060 100:£0.4300 25:£0.5620 5:£0.6610

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