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型號 | 製造商 | 描述 | 庫存 | 價格 |
---|---|---|---|---|
FDU6680A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 14A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant | 9000 |
|
FDU6680A | ISC | IPAK/TO-251 | 5000 |
圖片 | 型號 | 描述 |
---|---|---|
Mfr.#: FDU6612A OMO.#: OMO-FDU6612A |
MOSFET 30V N-Ch PowerTrench | |
Mfr.#: FDU6688 OMO.#: OMO-FDU6688 |
MOSFET 30V N-Ch PowerTrench | |
Mfr.#: FDU6512A OMO.#: OMO-FDU6512A |
MOSFET 20V N-Ch PwoerTrench | |
Mfr.#: FDU6030L OMO.#: OMO-FDU6030L-1190 |
全新原裝 | |
Mfr.#: FDU6296FSC OMO.#: OMO-FDU6296FSC-1190 |
全新原裝 | |
Mfr.#: FDU6512A |
MOSFET N-CH 20V 10.7A I-PAK | |
Mfr.#: FDU6680A OMO.#: OMO-FDU6680A-1190 |
Power Field-Effect Transistor, 14A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | |
Mfr.#: FDU6680A-Q OMO.#: OMO-FDU6680A-Q-1190 |
全新原裝 | |
Mfr.#: FDU6696 OMO.#: OMO-FDU6696-1190 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | |
Mfr.#: FDU6780A OMO.#: OMO-FDU6780A-1190 |
全新原裝 |