 | |  | |
| PartNumber | FDU6612A | FDU6680 | FDU6612 |
| Description | MOSFET 30V N-Ch PowerTrench | MOSFET 30V N-Channel PowerTrench | |
| Manufacturer | ON Semiconductor | ON Semiconductor | FAIRCHLID |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | E | E | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 30 A | 46 A | - |
| Rds On Drain Source Resistance | 20 mOhms | 10 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 2.8 W | 3.3 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Height | 16.3 mm | 16.3 mm | - |
| Length | 10.67 mm | 10.67 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | MOSFET | - |
| Width | 4.7 mm | 4.7 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Fall Time | 4 ns | 12 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | 7 ns | - |
| Factory Pack Quantity | 75 | 75 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 24 ns | 29 ns | - |
| Typical Turn On Delay Time | 9 ns | 10 ns | - |
| Part # Aliases | FDU6612A_NL | FDU6680_NL | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Forward Transconductance Min | - | 47 S | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDU6612A | MOSFET 30V N-Ch PowerTrench | |
| FDU6680 | MOSFET 30V N-Channel PowerTrench | ||
| FDU6688 | MOSFET 30V N-Ch PowerTrench | ||
| FDU6612 | 全新原裝 | ||
ON Semiconductor |
FDU6612A | MOSFET N-CH 30V 9.5A I-PAK | |
| FDU6676AS | MOSFET N-CH 30V 90A IPAK | ||
| FDU6680 | MOSFET N-CH 30V 12A IPAK | ||
| FDU6688 | MOSFET N-CH 30V 84A I-PAK | ||
| FDU6637 F085 | 全新原裝 | ||
| FDU6670AL-NL | 全新原裝 | ||
| FDU6676 | 全新原裝 | ||
| FDU6676ASNL | 全新原裝 | ||
| FDU6680(Q) | 全新原裝 | ||
| FDU6680A(Q) | 全新原裝 | ||
| FDU6680A-Q | 全新原裝 | ||
| FDU6680AS | 全新原裝 | ||
| FDU6680FSC | 全新原裝 | ||
| FDU6682-NL | 全新原裝 | ||
| FDU6688-Q | 全新原裝 | ||
| FDU6692-NL | 全新原裝 | ||
| FDU6644 | Power Field-Effect Transistor, 67A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | ||
| FDU6670AS | MOSFET 30V N-Channel PowerTrench SyncFET | ||
| FDU6680A | Power Field-Effect Transistor, 14A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | ||
| FDU6682 | Power Field-Effect Transistor, 75A I(D), 30V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | ||
| FDU6692 | Power Field-Effect Transistor, 54A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | ||
| FDU6696 | Power Field-Effect Transistor, 13A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |