SCT3022KLGC11

SCT3022KLGC11
Mfr. #:
SCT3022KLGC11
製造商:
Rohm Semiconductor
描述:
MOSFET Nch 1200V 95A SiC TO-247N
生命週期:
製造商新產品
數據表:
SCT3022KLGC11 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
SCT3022KLGC11 更多信息
產品屬性
屬性值
製造商:
羅姆半導體
產品分類:
MOSFET
RoHS:
Y
技術:
碳化矽
安裝方式:
通孔
包裝/案例:
TO-247N-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
1200 V
Id - 連續漏極電流:
95 A
Rds On - 漏源電阻:
22 mOhms
Vgs th - 柵源閾值電壓:
2.7 V
Vgs - 柵源電壓:
- 4 V, 22 V
Qg - 門電荷:
178 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
427 W
配置:
單身的
頻道模式:
增強
打包:
管子
系列:
SCT3x
晶體管類型:
1 N-Channel
品牌:
羅姆半導體
正向跨導 - 最小值:
14.2 S
秋季時間:
28 ns
產品類別:
MOSFET
上升時間:
44 ns
出廠包裝數量:
30
子類別:
MOSFET
典型關斷延遲時間:
67 ns
典型的開啟延遲時間:
29 ns
第 # 部分別名:
SCT3022KL
Tags
SCT3022K, SCT302, SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH SiC 1.2KV 95A 3-Pin(3+Tab) TO-247N Tube
***ment14 APAC
MOSFET, N-CH, 1.2KV, 95A, 175DEG C, 427W
***ronik
SiC-N 1200V 95A 22mOhm TO-247N
***ukat
SiC-N-Ch 1200V 95A 427W 0,0286R TO247
***i-Key
SCT3022KL IS AN SIC (SILICON CAR
***ark
Mosfet, N-Ch, 1.2Kv, 95A, 175Deg C, 427W; Transistor Polarity:n Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.022Ohm; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V; Powerrohs Compliant: Yes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
型號 製造商 描述 庫存 價格
SCT3022KLGC11
DISTI # SCT3022KLGC11-ND
ROHM SemiconductorSCT3022KL IS AN SIC (SILICON CAR
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 25:$94.9840
  • 10:$97.6410
  • 1:$102.9500
SCT3022KLGC11
DISTI # 81AC5491
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 95A, 175DEG C, 427W,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.022ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,PowerRoHS Compliant: Yes0
  • 100:$90.5700
  • 50:$93.9100
  • 25:$97.2600
  • 10:$100.6200
  • 5:$105.3600
  • 1:$107.3300
SCT3022KLGC11
DISTI # 755-SCT3022KLGC11
ROHM SemiconductorMOSFET Nch 1200V 95A SiC TO-247N
RoHS: Compliant
0
  • 1:$106.2700
  • 5:$104.3200
  • 10:$99.6200
  • 25:$96.3000
SCT3022KLGC11
DISTI # TMOS1630
ROHM SemiconductorSiC-N 1200V 95A 22mOhm TO-247N
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$167.6700
SCT3022KLGC11
DISTI # SCT3022KLGC11
ROHM SemiconductorSiC-N-Ch 1200V 95A 427W 0,0286R TO247
RoHS: Compliant
17
  • 1:€115.6500
  • 5:€105.6500
  • 10:€100.6500
  • 30:€97.1500
SCT3022KLGC11
DISTI # 2947065
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 95A, 175DEG C, 427W0
  • 10:£71.5500
  • 5:£76.4200
  • 1:£77.8400
SCT3022KLGC11ROHM SemiconductorMOSFET Nch 1200V 95A SiC TO-247N
RoHS: Compliant
Americas -
    SCT3022KLGC11
    DISTI # 2947065
    ROHM SemiconductorMOSFET, N-CH, 1.2KV, 95A, 175DEG C, 427W
    RoHS: Compliant
    0
    • 10:$198.0000
    • 5:$202.9900
    • 1:$206.3200
    圖片 型號 描述
    SCT3022KLGC11

    Mfr.#: SCT3022KLGC11

    OMO.#: OMO-SCT3022KLGC11

    MOSFET Nch 1200V 95A SiC TO-247N
    SCT3022ALHRC11

    Mfr.#: SCT3022ALHRC11

    OMO.#: OMO-SCT3022ALHRC11

    MOSFET 650V 93A 339W SIC 22mOhm TO-247N
    SCT3022KLHRC11

    Mfr.#: SCT3022KLHRC11

    OMO.#: OMO-SCT3022KLHRC11

    MOSFET 1200V 95A 427W SIC 22mOhm TO-247N
    SCT3022ALGC11

    Mfr.#: SCT3022ALGC11

    OMO.#: OMO-SCT3022ALGC11

    MOSFET N-Ch 650V SiC 93A 22mOhm TrenchMOS
    SCT3022KLGC11

    Mfr.#: SCT3022KLGC11

    OMO.#: OMO-SCT3022KLGC11-ROHM-SEMI

    SCT3022KL IS AN SIC (SILICON CAR
    SCT3022ALGC11

    Mfr.#: SCT3022ALGC11

    OMO.#: OMO-SCT3022ALGC11-ROHM-SEMI

    MOSFET NCH 650V 93A TO247N
    SCT3022KL

    Mfr.#: SCT3022KL

    OMO.#: OMO-SCT3022KL-1190

    全新原裝
    SCT3022ALHRC11

    Mfr.#: SCT3022ALHRC11

    OMO.#: OMO-SCT3022ALHRC11-ROHM-SEMI

    AUTOMOTIVE GRADE N-CHANNEL SIC P
    SCT3022KLHRC11

    Mfr.#: SCT3022KLHRC11

    OMO.#: OMO-SCT3022KLHRC11-ROHM-SEMI

    AUTOMOTIVE GRADE N-CHANNEL SIC P
    可用性
    庫存:
    900
    訂購:
    2883
    輸入數量:
    SCT3022KLGC11的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$106.27
    US$106.27
    5
    US$104.32
    US$521.60
    10
    US$99.62
    US$996.20
    25
    US$96.30
    US$2 407.50
    100
    US$89.67
    US$8 967.00
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