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IRFS4010-7PPBF

IRFS4010-7PPBF
Mfr. #:
IRFS4010-7PPBF
製造商:
Infineon / IR
描述:
MOSFET MOSFT 100V 190A 4.0mOhm 150nC
生命週期:
製造商新產品
數據表:
IRFS4010-7PPBF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS4010-7PPBF DatasheetIRFS4010-7PPBF Datasheet (P4-P6)IRFS4010-7PPBF Datasheet (P7-P9)
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-7
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
190 A
Rds On - 漏源電阻：
3.3 mOhms
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
150 nC
Pd - 功耗：
380 W
配置：
單身的
打包：
管子
高度：
4.4 mm
長度：
10 mm
晶體管類型：
1 N-Channel
寬度：
9.25 mm
品牌：
英飛凌/紅外
產品類別：
MOSFET
出廠包裝數量：
50
子類別：
MOSFET
第 # 部分別名：
SP001552284
單位重量：
0.056438 oz
Tags
IRFS4010-7, IRFS401, IRFS40, IRFS4, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK Tube / MOSFET N-CH 100V 190A D2PAK-7
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-pin package, D2PAK7P, RoHS
***(Formerly Allied Electronics)
MOSFET, 100V, 190A, 4.0MOHM, 150NC QG, D2PAK-7
***ment14 APAC
MOSFET, N-CH, 100V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9830pF; Current Id Max:190A; Package / Case:D2-PAK; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Pulse Current Idm:740A; Reverse Recovery Time trr Typ:60ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***ark
N CH POWER MOSFET, HEXFET, 100V, 190A, D2PAK-7; Transistor Polarity:N Channel; C
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-pin package, D2PAK7P, RoHS
***ure Electronics
Single N-Channel 100 V 4 mOhm 230 nC HEXFET® Power Mosfet - D2PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***et
Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK T/R
***Yang
Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (
***ment14 APAC
MOSFET, N-CH, 100V, 190A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Source Voltage Vds:100V; On Resistance
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***nell
MOSFET, N-CH, 100V, 190A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 190A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 380W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ical
Trans MOSFET N-CH 100V 190A Automotive 7-Pin(6+Tab) D2PAK Tube
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***(Formerly Allied Electronics)
Transistor MOSFET N-ch 100V 130A D2PAK-7
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3 Milliohms;ID 160A;D2Pak;PD 300W;VGS +/-20V
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a 7-lead D2-Pak Package, D2PAK7P, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ical
Trans MOSFET N-CH 75V 180A 7-Pin(6+Tab) D2PAK Tube
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:160A; On Resistance, Rds(on):3.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
***Yang
Transistor MOSFET N-CH 100V 200A 7-Pin TO-263 T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 100V, 200A, 3mΩ
***r Electronics
Power Field-Effect Transistor, 200A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
***nell
MOSFET, N-CH, 100V, 200A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 200A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 250W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***icroelectronics
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
***ical
Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) H2PAK T/R
*** Electronics
STMICROELECTRONICS STH315N10F7-6 MOSFET Transistor, N Channel, 180 A, 100 V, 0.0021 ohm, 10 V, 3.5 V
***nell
MOSFET, N CH, 100V, 180A, H2PAK-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V
***icroelectronics
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-6 package
***et
Trans MOSFET N-CH 75V 180A 7-Pin(6+Tab) H2PAK T/R
*** Source Electronics
MOSFET N-CH 75V 180A H2PAK / Conduction losses reduced
***r Electronics
Power Field-Effect Transistor, 180A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Electronic Components
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***ow.cn
STH240N75F3-6 STMicroelectronics Transistors MOSFETs N-CH 75V 180A 7-Pin(6+Tab) H2PAK T/R - Arrow.com
***icroelectronics SCT
Power MOSFETs, 75V, 180A, H2PAK-6, Tape and Reel
***S
French Electronic Distributor since 1988
***ponent Sense
QA-0096-0 TRS,SMT,H2PAK-6,N-CHANN POWER
***el Electronic
CAP CERAMIC DISK RDL SHORT LEADS
***ment14 APAC
MOSFET, N CH, 75V, 180A, H2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:H2PAK-6; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +175°C
型號 製造商 描述 庫存 價格
IRFS4010-7PPBF
DISTI # IRFS4010-7PPBF-ND		Infineon Technologies AGMOSFET N-CH 100V 190A D2PAK-7
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRFS40107PPBF
    DISTI # SP001552284    		Infineon Technologies AGTrans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK Tube (Alt: SP001552284)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€3.4900
    • 10:€2.7900
    • 25:€2.5900
    • 50:€2.4900
    • 100:€2.3900
    • 500:€2.2900
    • 1000:€2.2900
    IRFS4010-7PPBF
    DISTI # 942-IRFS4010-7PPBF    		Infineon Technologies AGMOSFET MOSFT 100V 190A 4.0mOhm 150nC
    RoHS: Compliant    		0
      IRFS4010-7PPBFInternational RectifierINSTOCK3
        IRFS4010-7PPBF
        DISTI # 1688589        		Infineon Technologies AGMOSFET, N-CH, 100V, D2PAK
        RoHS: Compliant        		0
        • 1:$8.1400
        • 10:$7.3100
        • 100:$5.9900
        圖片 型號 描述
        IRFS4010TRLPBF

        Mfr.#: IRFS4010TRLPBF

        OMO.#: OMO-IRFS4010TRLPBF

        		 MOSFET MOSFT 100V 180A 4.7mOhm 143nC Qg
        IRFS4010TRL7PP

        Mfr.#: IRFS4010TRL7PP

        OMO.#: OMO-IRFS4010TRL7PP

        		 MOSFET MOSFT 100V 190A 4.0mOhm 150nC Qg
        IRFS4010-7PPBF

        Mfr.#: IRFS4010-7PPBF

        OMO.#: OMO-IRFS4010-7PPBF

        		 MOSFET MOSFT 100V 190A 4.0mOhm 150nC
        IRFS4010TRRPBF

        Mfr.#: IRFS4010TRRPBF

        OMO.#: OMO-IRFS4010TRRPBF

        		 MOSFET 100V 1 N-CH HEXFET 4.7mOhms 143nC
        IRFS4010TRL7PP

        Mfr.#: IRFS4010TRL7PP

        OMO.#: OMO-IRFS4010TRL7PP-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 100V 190A D2PAK-7
        IRFS4010

        Mfr.#: IRFS4010

        OMO.#: OMO-IRFS4010-1190

        		 全新原裝
        IRFS4010-7PPBF

        Mfr.#: IRFS4010-7PPBF

        OMO.#: OMO-IRFS4010-7PPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 100V 190A D2PAK-7
        IRFS4010PBF

        Mfr.#: IRFS4010PBF

        OMO.#: OMO-IRFS4010PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 100V 180A D2PAK
        IRFS4010TRLPBF,FS4010

        Mfr.#: IRFS4010TRLPBF,FS4010

        OMO.#: OMO-IRFS4010TRLPBF-FS4010-1190

        		 全新原裝
        IRFS4010TRRPBF

        Mfr.#: IRFS4010TRRPBF

        OMO.#: OMO-IRFS4010TRRPBF-INFINEON-TECHNOLOGIES

        		 RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 4.7mOhms 143nC
        可用性
        庫存:
        Available
        訂購:
        4000
        輸入數量:
        IRFS4010-7PPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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