IPB50R299CPATMA1

Mfr. #:: IPB50R299CPATMA1
製造商:: Infineon Technologies
描述:: MOSFET LOW POWER_LEGACY
生命週期:: 製造商新產品
數據表:: IPB50R299CPATMA1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-263-3

通道數：: 1 Channel

晶體管極性：: N通道

配置：: 單身的

商品名：: 酷摩

打包：: 捲軸

高度：: 4.4 mm

長度：: 10 mm

晶體管類型：: 1 N-Channel

寬度：: 9.25 mm

品牌：: 英飛凌科技

產品類別：: MOSFET

子類別：: MOSFET

第 # 部分別名：: IPB50R299CPATMA1 SP000236094

單位重量：: 0.139332 oz

Tags: IPB50R29, IPB50R2, IPB50R, IPB50, IPB5, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB50R299CPATMA1 描述

***ical: TransMOSFETNCH550V12A3Pin2TabD2PAKTR

***ineon: CoolMOSCPInfineonsfifthseriesofCoolMOSisdesignedforhardandsoftswitchingtopologiesCCMPFCaswellasPWMforATXnotebookadapterPDPandLCDTVSummaryofFeaturesLowestfigureofmeritRonxQg;Ultralowgatecharge;Extremedvdtrate;UltralowRDSonultralowgatechargeveryfastswitching;Vth3VgfsveryhighinternalRgverylow;Highcurrentcapability;Significantreductionofconductionandswitchinglosses;Highpowerdensityandefficiencyforsuperiorpowerconversionsystems;BestinclasspriceperformanceratioTargetApplicationsSolar;Server;Telecom;Consumer;Adapter;PCpower

***ment14APAC: MOSFETNTO263;TransistorPolarityNChannel;ContinuousDrainCurrentId12A;DrainSourceVoltageVds550V;OnResistanceRdson299mohm;RdsonTestVoltageVgs10V;ThresholdVoltageVgsTyp3V;PowerDissipationPd104W;OperatingTemperatureRange55Cto150C;TransistorCaseStyleTO263;NoofPins3;SVHCNoSVHC20Jun2011;CurrentIdMax12A;PackageCaseTO263;PowerDissipationPd104W;TerminationTypeSMD;TransistorTypePowerMOSFET;VoltageVdsTyp550V;VoltageVgsMax20V;VoltageVgsRdsonMeasurement10V

Market price

型號	製造商	描述	庫存	價格
IPB50R299CPATMA1 DISTI # IPB50R299CPATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 550V 12A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB50R299CPATMA1 DISTI # IPB50R299CPATMA1	Infineon Technologies AG	Trans MOSFET N-CH 550V 12A 3-Pin TO-263 T/R - Bulk (Alt: IPB50R299CPATMA1) Min Qty: 348 Container: Bulk	Americas - 0	348:$1.1229 350:$1.0829 698:$1.0439 1740:$1.0089 3480:$0.9909
IPB50R299CP DISTI # 726-IPB50R299CP	Infineon Technologies AG	MOSFET N-Ch 550V 12A D2PAK-2 CoolMOS CP RoHS: Compliant	2	1:$2.2400 10:$1.9000 100:$1.5200 500:$1.3300 1000:$1.1100
IPB50R299CPATMA1 DISTI # N/A	Infineon Technologies AG	MOSFET LOW POWER_LEGACY	0
IPB50R299CPATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	59550	1000:$1.0300 500:$1.0800 100:$1.1300 25:$1.1700 1:$1.2600
IPB50R299CPATMA1 DISTI # 8275158P	Infineon Technologies AG	MOSFET N-CH 12A 550V COOLMOS TO263, RL	810	100:£0.7950

相關產品

圖片	型號	描述
	Mfr.#: IPB50R299CPATMA1 OMO.#: OMO-IPB50R299CPATMA1	MOSFET LOW POWER_LEGACY
	Mfr.#: IPB50R299CPATMA1 OMO.#: OMO-IPB50R299CPATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 550V 12A TO-263
	Mfr.#: IPB50R299CP PB-FREE OMO.#: OMO-IPB50R299CP-PB-FREE-1190	全新原裝
	Mfr.#: IPB50R299CP OMO.#: OMO-IPB50R299CP-124	Darlington Transistors MOSFET N-Ch 550V 12A D2PAK-2 CoolMOS CP