 |  | | |
| PartNumber | IPB50R299CPATMA1 | IPB50R299CP PB-FREE | IPB50R299CP |
| Description | MOSFET LOW POWER_LEGACY | Darlington Transistors MOSFET N-Ch 550V 12A D2PAK-2 CoolMOS CP | |
| Manufacturer | Infineon | - | INFINEON |
| Product Category | MOSFET | - | FETs - Single |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Configuration | Single | - | Single |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Reel | - | Reel |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPB50R299CPATMA1 SP000236094 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Series | - | - | CoolMOS CP |
| Part Aliases | - | - | IPB50R299CPATMA1 IPB50R299CPXT SP000236094 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 104 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 12 ns |
| Rise Time | - | - | 14 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 12 A |
| Vds Drain Source Breakdown Voltage | - | - | 550 V |
| Rds On Drain Source Resistance | - | - | 299 mOhms |
| Typical Turn Off Delay Time | - | - | 80 ns |
| Typical Turn On Delay Time | - | - | 35 ns |
| Channel Mode | - | - | Enhancement |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB50R299CPATMA1 | MOSFET LOW POWER_LEGACY | |
Infineon Technologies |
IPB50R299CPATMA1 | MOSFET N-CH 550V 12A TO-263 | |
| IPB50R299CP PB-FREE | 全新原裝 | ||
| IPB50R299CP | Darlington Transistors MOSFET N-Ch 550V 12A D2PAK-2 CoolMOS CP |