IRF8313PBF

Mfr. #:: IRF8313PBF
製造商:: Infineon Technologies
描述:: Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
生命週期:: 製造商新產品
數據表:: IRF8313PBF 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: FET - 陣列

系列: -

打包: 管替代包裝

單位重量: 0.019048 oz

安裝方式: 貼片/貼片

包裝盒: 8-SOIC (0.154", 3.90mm Width)

技術: 矽

工作溫度: -55°C ~ 175°C (TJ)

安裝型: 表面貼裝

通道數: 2 Channel

供應商-設備-包: 8-SO

配置: 雙重的

FET型: 2 N-Channel (Dual)

最大功率: 2W

晶體管型: 2 N-Channel

漏源電壓 Vdss: 30V

輸入電容-Ciss-Vds: 760pF @ 15V

FET-Feature: 邏輯電平門

Current-Continuous-Drain-Id-25°C: 9.7A

Rds-On-Max-Id-Vgs: 15.5 mOhm @ 9.7A, 10V

Vgs-th-Max-Id: 2.35V @ 25μA

柵極電荷-Qg-Vgs: 90nC @ 4.5V

鈀功耗: 2 W

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 9.7 A

Vds-漏-源-擊穿電壓: 30 V

Rds-On-Drain-Source-Resistance: 21.6 mOhms

晶體管極性: N通道

Qg-門電荷: 6 nC

Tags: IRF8313, IRF831, IRF83, IRF8, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF8313PBF 描述

***ure Electronics: Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8

***et Europe: Transistor MOSFET Array Dual N-CH 30V 9.7A 8-Pin SOIC Tube

***ark: Dual N Channel Mosfet, 30V, 9.7A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0155Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V

***ment14 APAC: MOSFET, DUAL N-CH 30V 9.7A SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.7A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

Market price

型號	製造商	描述	庫存	價格
IRF8313PBF DISTI # V99:2348_13891188	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube RoHS: Compliant	182	1:$0.2929
IRF8313PBF DISTI # IRF8313PBF-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 9.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Tube	Limited Supply - Call
IRF8313PBF.. DISTI # 30728279	Infineon Technologies AG	IRF8313PBF..	735	260:$0.2969
IRF8313PBF DISTI # 26198223	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube RoHS: Compliant	182	25:$0.2929
IRF8313PBF DISTI # IRF8313PBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC - Rail/Tube (Alt: IRF8313PBF) RoHS: Compliant Min Qty: 3800 Container: Tube	Americas - 4924
IRF8313PBF.. DISTI # 10R3491	Infineon Technologies AG	DUAL N CHANNEL MOSFET, 30V, 9.7A, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V	735	1:$0.1930 10:$0.1930 100:$0.1930 500:$0.1930 1000:$0.1930 2500:$0.1930 10000:$0.1930
IRF8313PBF DISTI # 942-IRF8313PBF	Infineon Technologies AG	MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC RoHS: Compliant	0
IRF8313PBF	Infineon Technologies AG	Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	1439	1000:$0.2400 500:$0.2500 100:$0.2600 25:$0.2700 1:$0.2900
IRF8313PBF	International Rectifier	Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	5182	1000:$0.2400 500:$0.2500 100:$0.2600 25:$0.2700 1:$0.2900
IRF8313TRPBF DISTI # IRF8313PBF-GURT	Infineon Technologies AG	2xN-Ch 30V 9,7A 2,0W 0,0155R SO8 RoHS: Compliant	2600	50:€0.2460 100:€0.2060 500:€0.1860 2000:€0.1790
IRF8313PBF DISTI # C1S327400167723	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube RoHS: Compliant	123	50:$0.2240 10:$0.3250

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