FQD2N60CTF

FQD2N60CTF
Mfr. #:
FQD2N60CTF
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 600V N-Channel Adv Q-FET C-Series
生命週期:
製造商新產品
數據表:
FQD2N60CTF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
MOSFET
RoHS:
E
技術:
安裝方式:
貼片/貼片
包裝/案例:
TO-252-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
1.9 A
Rds On - 漏源電阻:
4.7 Ohms
Vgs - 柵源電壓:
30 V
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
2.5 W
配置:
單身的
頻道模式:
增強
打包:
捲軸
高度:
2.39 mm
長度:
6.73 mm
系列:
FQD2N60C
晶體管類型:
1 N-Channel
類型:
MOSFET
寬度:
6.22 mm
品牌:
安森美半導體/飛兆半導體
正向跨導 - 最小值:
5 S
秋季時間:
28 ns
產品類別:
MOSFET
上升時間:
25 ns
出廠包裝數量:
2000
子類別:
MOSFET
典型關斷延遲時間:
24 ns
典型的開啟延遲時間:
9 ns
第 # 部分別名:
FQD2N60CTF_NL
單位重量:
0.009184 oz
Tags
FQD2N60CTF, FQD2N60CT, FQD2N60C, FQD2N60, FQD2N6, FQD2N, FQD2, FQD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel QFET® MOSFET 600V, 1.9A, 4.7Ω
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:1.9mA; On Resistance, Rds(on):3.6ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
型號 製造商 描述 庫存 價格
FQD2N60CTF
DISTI # FQD2N60CTF-ND
ON SemiconductorMOSFET N-CH 600V 1.9A DPAK
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    FQD2N60CTF_F080
    DISTI # FQD2N60CTF_F080-ND
    ON SemiconductorMOSFET N-CH 600V 1.9A DPAK
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)
    Limited Supply - Call
      FQD2N60CTF
      DISTI # FQD2N60CTF
      ON SemiconductorTRANS MOSFET N-CH 600V 1.9A 3PIN DPAK - Bulk (Alt: FQD2N60CTF)
      RoHS: Compliant
      Min Qty: 1000
      Container: Bulk
      Americas - 0
      • 10000:$0.3079
      • 5000:$0.3159
      • 3000:$0.3199
      • 2000:$0.3239
      • 1000:$0.3259
      FQD2N60CTF
      DISTI # 512-FQD2N60CTF
      ON SemiconductorMOSFET 600V N-Channel Adv Q-FET C-Series
      RoHS: Compliant
      0
        FQD2N60CTF_F080
        DISTI # 512-FQD2N60CTF-F080
        ON SemiconductorMOSFET Trans MOS N-Ch 600V 1.9A 3-Pin 2+Tab
        RoHS: Compliant
        0
          FQD2N60CTFFairchild Semiconductor CorporationPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
          RoHS: Compliant
          1010
          • 1000:$0.3300
          • 500:$0.3500
          • 100:$0.3600
          • 25:$0.3800
          • 1:$0.4100
          FQD2N60CTFFairchild Semiconductor CorporationPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
          RoHS: Compliant
          6000
            FQD2N60CTFFairchild Semiconductor Corporation600V,1.9A,N-Ch MOSFET1150
            • 1:$0.5100
            • 100:$0.3600
            • 500:$0.2700
            • 1000:$0.2600
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            Mfr.#: FQD2N60CTM

            OMO.#: OMO-FQD2N60CTM-ON-SEMICONDUCTOR

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            Mfr.#: FQD2N60CTM-NL

            OMO.#: OMO-FQD2N60CTM-NL-1190

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            FQD2N65C

            Mfr.#: FQD2N65C

            OMO.#: OMO-FQD2N65C-1190

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            FQD2N90TM,FQD2N90,D2N90,

            Mfr.#: FQD2N90TM,FQD2N90,D2N90,

            OMO.#: OMO-FQD2N90TM-FQD2N90-D2N90--1190

            全新原裝
            FQD2N60CTM_WS

            Mfr.#: FQD2N60CTM_WS

            OMO.#: OMO-FQD2N60CTM-WS-126

            IGBT Transistors MOSFET 600V 1.9A NCH MOSFET
            可用性
            庫存:
            Available
            訂購:
            4000
            輸入數量:
            FQD2N60CTF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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