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FPF2G120BF07ASP

FPF2G120BF07ASP
Mfr. #:
FPF2G120BF07ASP
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Modules High Power Module
生命週期:
製造商新產品
數據表:
FPF2G120BF07ASP 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FPF2G120BF07ASP 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT 模塊
RoHS：
Y
產品：
IGBT 矽模塊
配置：
三倍
集電極-發射極電壓 VCEO 最大值：
650 V
集電極-發射極飽和電壓：
1.55 V
25 C 時的連續集電極電流：
40 A
柵極-發射極漏電流：
2 uA
Pd - 功耗：
156 W
包裝/案例：
F2
最低工作溫度：
- 40 C
最高工作溫度：
+ 150 C
打包：
托盤
系列：
FPF2G120BF07ASP
品牌：
安森美半導體/飛兆半導體
安裝方式：
底盤安裝
最大柵極發射極電壓：
20 V
產品類別：
IGBT 模塊
出廠包裝數量：
70
子類別：
IGBT
單位重量：
1.587328 oz
Tags
FPF2G, FPF2, FPF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
HPM(High Power Module) - HPM F2 PKG, 32LD, SOLDERING TERMINAL, 3CH BOOST MODULE, PCM
***emi
Power Integrated Module (PIM), F2, SiC Diode + IGBT, 650 V, 40 A with pre-applied thermal interface material
***et Europe
Trans IGBT Module N-CH 650V 40A 17-Pin Case F2
***rchild Semiconductor
The FPF2G120BF07ASP is the 3ch boost topology which is providing an optimized solution for the multi-string solar application. And the integrated high speed field stop IGBTs and SiC diodes are providing lower conduction and switching losses. And the pre-applied PCM requires no additional process of the thermal interface material printing. Furthermore, the screwclamp provides a fast and reliable mounting method.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
SiC Diodes and IGBT Power Integrated Modules
ON Semiconductor Silicon Carbide (SiC) Diodes and IGBT Power Integrated Modules (PIM) provide lower conduction and switching losses. These integrated high-speed field stop IGBT and SiC diodes feature built-in Negative Temperature Co-efficient (NTC) for temperature monitoring. The SiC diodes and IGBT PIMs are optimized for solar inverters, UPS, or power stages that need a more compact design.
型號 製造商 描述 庫存 價格
FPF2G120BF07ASP
DISTI # V99:2348_14141234		ON SemiconductorHPM(HIGH POWER MODULE)70
  • 25:$102.0699
  • 10:$105.1900
  • 5:$108.7000
  • 1:$109.0800
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP-ND		ON SemiconductorIC LOAD SWITCH
RoHS: Compliant
Min Qty: 1
Container: Tray		70In Stock
  • 10:$103.6350
  • 1:$109.2800
FPF2G120BF07ASP
DISTI # 31085825		ON SemiconductorHPM(HIGH POWER MODULE)70
  • 1:$109.0800
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Trays (Alt: FPF2G120BF07ASP)
RoHS: Compliant
Min Qty: 70
Container: Tray		Americas - 0
  • 700:$84.8900
  • 420:$86.9900
  • 280:$89.1900
  • 140:$91.4900
  • 70:$92.6900
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 (Alt: FPF2G120BF07ASP)
RoHS: Compliant
Min Qty: 1
Container: Case		Europe - 0
  • 1000:€81.6900
  • 500:€82.1900
  • 100:€82.7900
  • 50:€83.3900
  • 25:€83.8900
  • 10:€84.4900
  • 1:€85.0900
FPF2G120BF07ASP
DISTI # 512-FPF2G120BF07ASP		ON SemiconductorIGBT Modules High Power Module
RoHS: Compliant		70
  • 1:$112.8000
  • 5:$110.7300
  • 10:$105.7500
  • 25:$102.2200
圖片 型號 描述
FPF2G120BF07ASP

Mfr.#: FPF2G120BF07ASP

OMO.#: OMO-FPF2G120BF07ASP

 IGBT Modules High Power Module
FPF2G120BF07AS

Mfr.#: FPF2G120BF07AS

OMO.#: OMO-FPF2G120BF07AS

 IGBT Modules High Power Module
FPF2G120BF07AS

Mfr.#: FPF2G120BF07AS

OMO.#: OMO-FPF2G120BF07AS-ON-SEMICONDUCTOR

 IC LOAD SWITCH
FPF2G120BF07ASP

Mfr.#: FPF2G120BF07ASP

OMO.#: OMO-FPF2G120BF07ASP-ON-SEMICONDUCTOR

 IC LOAD SWITCH
可用性
庫存:
70
訂購:
2053
輸入數量:
FPF2G120BF07ASP的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$112.80
US$112.80
5
US$110.73
US$553.65
10
US$105.75
US$1 057.50
25
US$102.22
US$2 555.50
100
US$95.19
US$9 519.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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