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| PartNumber | FPF2G120BF07ASP | FPF2G120BF07AS | FPF2G75FH07A |
| Description | IGBT Modules High Power Module | IGBT Modules High Power Module | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Triple | Triple | - |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
| Collector Emitter Saturation Voltage | 1.55 V | 1.55 V | - |
| Continuous Collector Current at 25 C | 40 A | 40 A | - |
| Gate Emitter Leakage Current | 2 uA | 2 uA | - |
| Pd Power Dissipation | 156 W | 98 W, 140 W, 156 W | - |
| Package / Case | F2 | F2 | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tray | Tray | - |
| Series | FPF2G120BF07ASP | FPF2G120BF07AS | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Mounting Style | Chassis Mount | SMD/SMT | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 70 | 70 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 1.587328 oz | 1.587328 oz | - |