IPA60R520CP

Mfr. #:: IPA60R520CP
製造商:: Rochester Electronics, LLC
描述:: IGBT Transistors MOSFET N-Ch 600V 6.8A TO220FP-3 CoolMOS CP
生命週期:: 製造商新產品
數據表:: IPA60R520CP 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌

產品分類: FET - 單

Tags: IPA60R520CP, IPA60R520C, IPA60R5, IPA60R, IPA60, IPA6, IPA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPA60R520CP 描述

***ark: MOSFET, N CHANNEL, 650V, 6.8A, TO-220FP

***et: EiceDRIVER 2EDN Gate Driver for MOSFETs - Rugged, Cool and Fast 2-Channel Low-Side 5A Driver ICs

***i-Key: MOSFET N-CH 650V 6.8A TO220-3

***ment14 APAC: MOSFET, N, TO-220

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***nell: MOSFET, N, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6.8A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.47ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:30W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:6.8A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:650V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Foro Passante; Tipo di Transistor:Power MOSFET

Market price

型號	製造商	描述	庫存	價格
IPA60R520CPXKSA1 DISTI # IPA60R520CPXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.8A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IPA60R520CP DISTI # 33P7120	Infineon Technologies AG	MOSFET, N CHANNEL, 650V, 6.8A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:6.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.47ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- , RoHS Compliant: Yes	0
IPA60R520CP DISTI # 726-IPA60R520CP	Infineon Technologies AG	MOSFET N-Ch 600V 6.8A TO220FP-3 CoolMOS CP RoHS: Compliant	0
IPA60R520CP	Infineon Technologies AG	Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	55486	1000:$1.1300 500:$1.1900 100:$1.2400 25:$1.2900 1:$1.3900
IPA60R520CPXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	11500	1000:$1.3200 500:$1.3900 100:$1.4500 25:$1.5100 1:$1.6300

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