IPB200N15N3

Mfr. #:: IPB200N15N3
製造商:: Rochester Electronics, LLC
描述:: Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
生命週期:: 製造商新產品
數據表:: IPB200N15N3 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: OptiMOS 3

打包: 捲軸

部分別名: IPB200N15N3GATMA1 IPB200N15N3GXT SP000414740

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

商品名: 優化MOS

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 150 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 6 ns

上升時間: 11 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 50 A

Vds-漏-源-擊穿電壓: 150 V

VGS-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 20 mOhms

晶體管極性: N通道

典型關斷延遲時間: 23 ns

典型開啟延遲時間: 14 ns

Qg-門電荷: 31 nC

正向跨導最小值: 57 S 29 S

通道模式: 增強

Tags: IPB200N15N3, IPB200N1, IPB200, IPB20, IPB2, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB200N15N3 描述

***or: N-CHANNEL POWER MOSFET

Market price

型號	製造商	描述	庫存	價格
IPB200N15N3GATMA1 DISTI # 31077231	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	4000	2000:$1.2425 1000:$1.3875
IPB200N15N3 G DISTI # 30579106	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263 RoHS: Compliant	1000	500:$1.6575 100:$1.8870 50:$2.0145 10:$2.3843
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1999In Stock	500:$1.8473 100:$2.3751 10:$2.9560 1:$3.2700
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1999In Stock	500:$1.8473 100:$2.3751 10:$2.9560 1:$3.2700
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	1000:$1.4861
IPB200N15N3 G DISTI # C1S322000088900	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	100:$1.4800 50:$1.5800 10:$1.8700 1:$2.2000
IPB200N15N3GATMA1 DISTI # C1S322000281482	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	4000	1000:$1.3800
IPB200N15N3 G DISTI # SP000414740	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.8900 2000:€1.4900 4000:€1.1900 6000:€1.0900 10000:€1.0900
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.2900 2000:$1.1900 4000:$1.1900 6000:$1.1900 10000:$1.0900
IPB200N15N3GATMA1 DISTI # SP000414740	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.5199 2000:€1.2669 4000:€1.1689 6000:€1.0859 10000:€1.0129
IPB200N15N3GATMA1 DISTI # 60R2679	Infineon Technologies AG	MOSFET, N CH, 150V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes	0	1:$2.8600 10:$2.5700 100:$2.0600 500:$1.6900
IPB200N15N3 G DISTI # 726-IPB200N15N3G	Infineon Technologies AG	MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant	0	1:$2.7500 10:$2.3300 100:$1.8700 500:$1.6400 1000:$1.3600
IPB200N15N3	Infineon Technologies AG	RoHS: Not Compliant	101	1000:$0.6600 500:$0.6900 100:$0.7200 25:$0.7500 1:$0.8100
IPB200N15N3G	Infineon Technologies AG	Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	127	1000:$1.1200 500:$1.1800 100:$1.2300 25:$1.2800 1:$1.3800
IPB200N15N3GATMA1 DISTI # 7545443	Infineon Technologies AG	MOSFET N-CHANNEL 150V 50A OPTIMOS3 TO263, PK	286	2:£2.0250 10:£1.6050 50:£1.4450 250:£1.2850 500:£1.1250
IPB200N15N3GATMA1 DISTI # 1775559	Infineon Technologies AG	MOSFET, N CH, 50A, 150V, PG-TO263-3 RoHS: Compliant	954	1:£2.0500 10:£1.4600 100:£1.3800 250:£1.3000 500:£1.1400
IPB200N15N3G DISTI # XSKDRABV0030580	INF	RoHS: Compliant	720	1000:$1.9000

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