MJD44H11-1G

Mfr. #:: MJD44H11-1G
製造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT 8A 80V 20W NPN
生命週期:: 製造商新產品
數據表:: MJD44H11-1G 數據表
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HTML Datasheet:: MJD44H11-1G Datasheet MJD44H11-1G Datasheet (P4-P6)MJD44H11-1G Datasheet (P7-P9)
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 雙極晶體管 - BJT

RoHS：: Y

安裝方式：: 通孔

包裝/案例：: DPAK-3

晶體管極性：: NPN

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 80 V

集電極-基極電壓 VCBO：: 5 V

發射極基極電壓 VEBO：: 5 V

集電極-發射極飽和電壓：: 1 V

最大直流集電極電流：: 8 A

增益帶寬積 fT：: 85 MHz

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

系列：: MJD44H11

高度：: 6.35 mm

長度：: 6.73 mm

打包：: 管子

寬度：: 2.38 mm

品牌：: 安森美半導體

連續集電極電流：: 8 A

DC 集電極/基極增益 hfe 最小值：: 60

Pd - 功耗：: 20 W

產品類別：: BJT - 雙極晶體管

出廠包裝數量：: 75

子類別：: 晶體管

單位重量：: 0.012346 oz

Tags: MJD44H11-1, MJD44H1, MJD44H, MJD44, MJD4, MJD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJD44H11-1G 描述

***icontronic: Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

***emi: 8 A, 80 V NPN Bipolar Power Transistor

***p One Stop: Trans GP BJT NPN 80V 8A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube

***ure Electronics: MJD44H11 Series 80 V 8 A 1.75 W NPN Complementary Power Transistor - IPAK-3

***nell: TRANSISTOR, NPN, 80V, 8A, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 85MHz; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 60hFE; Transistor C

***th Star Micro: ...for general purpose power and switching such as output or driver stag applications such as switching regulators converters and power amplifiers.

***ure Electronics: NPN 1.75 W 80 V 8 A Surface Mount Epitaxial Silicon Transistor - TO-252-3

***r Electronics: Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA, Plastic/Epoxy, 3 Pin

***et: Trans GP BJT NPN 80V 8A 3-Pin(3+Tab) IPAK Rail

*** Electronic Components: Bipolar Transistors - BJT NPN/80V/8A

***emi: Medium Power NPN Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

***et: Transistor GP BJT NPN 45V 4A 3-Pin TO-225AA

***nell: TRANSISTOR, NPN TO-126; Transistor Type:Power General Purpose; Transistor Polarity:NPN; Voltage, Vceo:45V; Current, Ic Continuous a Max:4A; Hfe, Min:40; Case Style:TO-126; Current, Ic Max:4A; Current, Ic hFE:2A; Pins, No. of:3; Power, Ptot:36W; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vcbo:45V; ft, Min:3MHz

***ca Corp: Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

***emi: 2.0 A, 100 V NPN Darlington Bipolar Power Transistor

***(Formerly Allied Electronics): ON Semi MJD112-1G NPN Darlington Transistor; 2 A 100 V HFE:1000; 3-Pin IPAK

***ure Electronics: MJD Series 100 V 2 A Through Hole NPN Complementary Darlington Power Transistor

***p One Stop: Trans Darlington NPN 100V 2A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube

***th Star Micro: Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.

***nell: TRANSISTOR, NPN, 100V, 2A, TO-251; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 20W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transisto

***ark: DARLINGTON TRANSISTOR, NPN, 100V, DPAK-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Market price

型號	製造商	描述	庫存	價格
MJD44H11-1G DISTI # V36:1790_07277230	ON Semiconductor	Trans GP BJT NPN 80V 8A Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	2211	9000:$0.1661 6000:$0.1845 3000:$0.2051 2100:$0.2359
MJD44H11-1G DISTI # V99:2348_07277230	ON Semiconductor	Trans GP BJT NPN 80V 8A Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	123	50000:$0.1585 25000:$0.1603 10000:$0.1781 2500:$0.1979 1000:$0.2287 100:$0.2795 10:$0.3829 1:$0.4464
MJD44H11-1G DISTI # MJD44H11-1GOS-ND	ON Semiconductor	TRANS NPN 80V 8A IPAK RoHS: Compliant Min Qty: 1 Container: Tube	2628In Stock	1050:$0.2705 525:$0.3381 150:$0.4277 75:$0.5240 1:$0.6300
MJD44H11-1G DISTI # 25679300	ON Semiconductor	Trans GP BJT NPN 80V 8A Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	2175	100:$0.2774 35:$0.3805
MJD44H11-1G DISTI # 30228406	ON Semiconductor	Trans GP BJT NPN 80V 8A Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	123	100:$0.2774 33:$0.3805
MJD44H11-1G DISTI # 30605368	ON Semiconductor	Trans GP BJT NPN 80V 8A Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	12	11:$0.4424
MJD44H11-1G DISTI # MJD44H11-1G	ON Semiconductor	Trans GP BJT NPN 80V 8A 3-Pin(3+Tab) IPAK Rail (Alt: MJD44H11-1G) RoHS: Compliant Min Qty: 2100	Asia - 10500	75:$1.2483 150:$0.2401 225:$0.2312 375:$0.2229 750:$0.2152 1875:$0.2081 3750:$0.2046
MJD44H11-1G DISTI # MJD44H11-1G	ON Semiconductor	Trans GP BJT NPN 80V 8A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: MJD44H11-1G) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 195	1:$0.4049 10:$0.3439 25:$0.3429 50:$0.3419 100:$0.2499 500:$0.2489 1000:$0.2319
MJD44H11-1G DISTI # 30AC9900	ON Semiconductor	TRANSISTOR, NPN, 80V, 8A, TO-252,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:85MHz,Power Dissipation Pd:20W,DC Collector Current:8A,DC Current Gain hFE:60hFE,Transistor Case , RoHS Compliant: Yes	916	1:$0.6540 10:$0.5230 100:$0.3540 500:$0.3060 1000:$0.2670 2500:$0.2160 10000:$0.2090
MJD44H11-1G DISTI # 863-MJD44H11-1G	ON Semiconductor	Bipolar Transistors - BJT 8A 80V 20W NPN RoHS: Compliant	6109	1:$0.6100 10:$0.5000 100:$0.3220 1000:$0.2580 2500:$0.2180 10000:$0.2100 25000:$0.2020
MJD44H11-001 DISTI # 863-MJD44H11-001	ON Semiconductor	Bipolar Transistors - BJT 8A 80V 20W NPN RoHS: Not compliant	0
MJD44H11-1G	ON Semiconductor	RoHS: Not Compliant	4950	1000:$0.2700 500:$0.2800 100:$0.2900 25:$0.3000 1:$0.3300
MJD44H11-1G	ON Semiconductor	INSTOCK	12163
MJD44H11-1G DISTI # 2774791	ON Semiconductor	TRANSISTOR, NPN, 80V, 8A, TO-252 RoHS: Compliant	915	5:£0.4320 25:£0.4030 100:£0.2460 250:£0.2200 500:£0.1930
MJD44H11-1G DISTI # 2774791	ON Semiconductor	TRANSISTOR, NPN, 80V, 8A, TO-252 RoHS: Compliant	911	1:$0.9430 10:$0.8090 100:$0.5520 250:$0.4530 500:$0.3710 1000:$0.3430
MJD44H11-1G DISTI # C1S541900420634	ON Semiconductor	Trans GP BJT NPN 80V 8A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	12	10:$0.3470 1:$1.8200
MJD44H11-1G DISTI # C1S541900119525	ON Semiconductor	Trans GP BJT NPN 80V 8A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	123	100:$0.2795 10:$0.3829

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